Power Transistors 2SC2258 Silicon NPN triple diffusion planar type For high breakdown voltage general amplification Unit: mm 8.0+0.5 –0.1 3.2±0.2 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 250 V Collector-emitter voltage (Base open) VCEO 250 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 100 mA Peak collector current ICP 150 mA Collector power dissipation PC 1.2 *1 W 4 0.75±0.1 3.05±0.1 3.8±0.3 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT • TO-126B package which requires no insulation plate for installation to the heat sink 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 0.5±0.1 4.6±0.2 1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 *2 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note) *1: Without heat sink *2 :With a 100 × 100 × 2 mm Al heat sink ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Emitter-base voltage (Collector open) VEBO IE = 0.1 mA, IC = 0 Base-emitter voltage VBE VCE = 20 V, IC = 40 mA 1.2 V Collector-emitter cutoff current (Resistor between B and E) ICER VCE = 250 V, RBE = 100 kΩ 100 µA Forward current transfer ratio Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) Conditions Min hFE1 VCE = 20 V, IC = 40 mA 40 VCE = 50 V, IC = 5 mA 30 VCE(sat) IC = 50 mA, IB = 5 mA Cob Max 7 hFE2 fT Typ Unit V 1.2 VCB = 10 V, IE = −10 mA, f = 200 MHz 100 VCB = 50 V, IE = 0, f = 1 MHz 3.0 V MHz 4.5 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: January 2003 SJD00098BED 1 2SC2258 PC Ta IC VCE 1.8mA 100 2 (2) 1 80 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 20 0 80 120 160 0 2 IC I B Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 100 80 60 40 20 0.8 6 8 1.2 1.6 2.0 100 Transition frequency fT (MHz) Forward current transfer ratio hFE 25˚C –25˚C 40 0.1 1 Collector current IC (mA) 2 10 1.6 2.0 VCE=10V TC=25˚C 1 TC=100˚C 25˚C 2.0 1.5 1.0 0.1 –25˚C 0.01 0.1 1 0.5 10 0 100 0 120 80 40 −10 Emitter current IE (mA) SJD00098BED 0.4 0.6 0.8 1.0 Cob VCB VCB=10V f=200MHz TC=25˚C 0 −1 0.2 Base-emitter voltage VBE (V) fT I E TC=100˚C 1.2 IB VBE 160 200 0.8 3.0 IC/IB=10 VCE=10V 0 0.01 0.4 Base-emitter voltage VBE (V) 2.5 hFE IC 80 0 Collector current IC (A) 240 120 0 10 10 Base current IB (mA) 160 40 VCE(sat) IC VCE=10V TC=25˚C 0.4 60 Collector-emitter voltage VCE (V) 120 0 4 Base current IB (mA) 40 80 20 −100 Collector output capacitance C (pF) (Common base, input open circuited) ob 0 25˚C –25˚C TC=100˚C 100 1.6mA 1.4mA 1.2mA Ambient temperature Ta (°C) 0 VCE=10V IB=2.0mA Collector current IC (mA) Collector current IC (mA) Collector power dissipation PC (W) 3 120 TC=25˚C (1)With a 100×100×2mm Al heat sink (2)Without heat sink (1) 4 0 IC VBE 120 5 10 IE=0 f=1MHz TC=25˚C 8 6 4 2 0 1 10 Collector-base voltage VCB (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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