Power Transistors 2SD2178 Silicon NPN epitaxial planar type For low-frequency output amplification Unit: mm 90˚ • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC 0.85±0.1 1.0±0.1 0.8 C ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 50 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 2 A Peak collector current ICP 3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 16.0±1.0 2.5±0.1 0.65±0.1 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 10.8±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE1 * VCE = 2 V, IC = 200 mA 120 hFE2 VCE = 2 V, IC = 1 A 80 Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA Base-emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit 0.1 µA 340 0.15 0.30 V IC = 1 A, IB = 50 mA 0.9 1.2 VCB = 10 V, IE = −50 mA, f = 200 MHz 150 VCB = 10 V, IE = 0, f = 1 MHz 23 V MHz 35 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 120 to 240 170 to 340 Publication date: May 2003 SJD00251BED 1 2SD2178 PC Ta IC VCE 2.0 Collector-emitter saturation voltage VCE(sat) (V) Without heat sink Collector power dissipation PC (W) VCE(sat) IC 120 Ta=25˚C 100 Collector current IC (mA) 1.6 1.2 0.8 IB=400µA 80 350µA 300µA 60 250µA 200µA 40 150µA 0.4 100µA 20 50µA 0 40 80 120 0 160 0 Ambient temperature Ta (°C) 2 4 25˚C 0.1 0.1 1 Ta=75˚C Ta=25˚C 150 Ta=–25˚C 100 50 0.1 1 10 160 120 80 40 0 −1 10 −10 −100 Emitter current IE (mA) Rth t Thermal resistance Rth (°C/W) Collector output capacitance C (pF) (Common base, input open circuited) ob 1 VCB=10V f=200MHz Ta=25˚C 104 30 20 10 10 100 Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 Time t (s) Collector-base voltage VCB (V) 2 0.1 200 Collector current IC (A) IE=0 f=1MHz Ta=25˚C 1 10−3 0.01 fT I E 200 0 0.01 10 40 0 10−2 240 Cob VCB 50 10−1 Collector current IC (A) 250 Collector current IC (A) 60 –25˚C VCE=2V Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) Ta=–25˚C 0.01 0.01 12 Ta=75˚C 25˚C hFE IC 10 75˚C 10 300 IC/IB=50 1 8 IC/IB=50 1 Collector-emitter voltage VCE (V) VBE(sat) IC 100 6 Transition frequency fT (MHz) 0 10 SJD00251BED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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