Power Transistors 2SD1266, 2SD1266A Silicon NPN triple diffusion planar type For power amplification Complementary to 2SB941 and 2SB941A ■ Features Parameter 2SD1266 base voltage 2SD1266A Collector to 2SD1266 Ratings 60 VCBO 60 VCEO emitter voltage 2SD1266A V 80 Emitter to base voltage VEBO 6 V Peak collector current ICP 5 A Collector current IC 3 A Collector power TC=25°C dissipation Junction temperature Tj Storage temperature Tstg 35 150 ˚C –55 to +150 ˚C Symbol 2SD1266 2SD1266A Collector cutoff 2SD1266 current 2SD1266A Emitter cutoff current ICES ICEO IEBO Collector to emitter 2SD1266 voltage 2SD1266A Forward current transfer ratio Conditions 0.7±0.1 4.2±0.2 2.54±0.25 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) min typ max 200 VCE = 80V, VBE = 0 200 VCE = 30V, IB = 0 300 VCE = 60V, IB = 0 300 VEB = 6V, IC = 0 1 60 VCEO IC = 30mA, IB = 0 hFE1* VCE = 4V, IC = 1A 70 10 hFE2 VCE = 4V, IC = 3A VBE VCE = 4V, IC = 3A Collector to emitter saturation voltage VCE(sat) IC = 3A, IB = 0.375A Transition frequency fT VCE = 10V, IC = 0.5A, f = 10MHz Turn-on time ton Storage time tstg Fall time tf FE1 0.5 +0.2 –0.1 VCE = 60V, VBE = 0 Base to emitter voltage *h 0.8±0.1 1.3±0.2 (TC=25˚C) Parameter current 1.4±0.1 W 2 ■ Electrical Characteristics Collector cutoff φ3.1±0.1 5.08±0.5 PC Ta=25°C 2.7±0.2 Unit V 80 4.2±0.2 5.5±0.2 7.5±0.2 (TC=25˚C) Symbol Collector to 16.7±0.3 ■ Absolute Maximum Ratings 10.0±0.2 4.0 ● High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● Solder Dip ● Unit: mm VCC = 50V µA µA mA V 80 IC = 1A, IB1 = 0.1A, IB2 = – 0.1A, Unit 250 1.8 1.2 V V 30 MHz 0.5 µs 2.5 µs 0.4 µs Rank classification Rank Q P hFE1 70 to 150 120 to 250 Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification. 1 Power Transistors 2SD1266, 2SD1266A PC — Ta IC — VCE 40 (1) 30 20 (2) 10 8 TC=25˚C 4 IB=100mA 90mA 80mA 70mA 60mA 50mA 40mA 3 30mA 2 20mA 1 20 40 60 80 100 120 140 160 2 4 6 8 10 3 2 12 0 hFE — IC 3000 25˚C 1 –25˚C 0.1 0.03 0.3 1 3 300 100 TC=100˚C 25˚C –25˚C 30 10 3 0.1 0.3 1 3 ICP t=1ms 10ms DC 0.3 0.01 3 10 30 2SD1266A 2SD1266 0.1 0.03 100 300 Collector to emitter voltage VCE 10 1000 (V) 0.1 0.3 1 3 Collector current IC (A) Rth(t) — t Thermal resistance Rth(t) (˚C/W) Non repetitive pulse TC=25˚C 1 30 1 0.01 0.03 10 103 IC 100 3 Area of safe operation (ASO) 30 300 Collector current IC (A) 100 (1) Without heat sink (2) With a 100 × 100 × 2mm Al heat sink 102 (1) (2) 10 1 10–1 10–2 10–4 2.4 1000 1 0.01 0.03 10 2.0 VCE=5V f=10MHz TC=25˚C 3000 Transition frequency fT (MHz) Forward current transfer ratio hFE TC=100˚C 0.1 1.6 fT — IC 1000 0.01 0.01 0.03 1.2 VCE=4V 10 0.3 0.8 10000 IC/IB=8 30 3 0.4 Base to emitter voltage VBE (V) 10000 Collector current IC (A) Collector current IC (A) 4 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 1 –25˚C 5 0 0 Ambient temperature Ta (˚C) 3 TC=100˚C 1 0 10 25˚C 6 10mA (3) (4) 0 2 VCE=4V 7 Collector current IC (A) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 0 Collector to emitter saturation voltage VCE(sat) (V) IC — VBE 5 Collector current IC (A) Collector power dissipation PC (W) 50 10–3 10–2 10–1 1 Time t (s) 10 102 103 104 10