PANASONIC 2SD1266A

Power Transistors
2SD1266, 2SD1266A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB941 and 2SB941A
■ Features
Parameter
2SD1266
base voltage
2SD1266A
Collector to
2SD1266
Ratings
60
VCBO
60
VCEO
emitter voltage 2SD1266A
V
80
Emitter to base voltage
VEBO
6
V
Peak collector current
ICP
5
A
Collector current
IC
3
A
Collector power TC=25°C
dissipation
Junction temperature
Tj
Storage temperature
Tstg
35
150
˚C
–55 to +150
˚C
Symbol
2SD1266
2SD1266A
Collector cutoff
2SD1266
current
2SD1266A
Emitter cutoff current
ICES
ICEO
IEBO
Collector to emitter
2SD1266
voltage
2SD1266A
Forward current transfer ratio
Conditions
0.7±0.1
4.2±0.2
2.54±0.25
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
min
typ
max
200
VCE = 80V, VBE = 0
200
VCE = 30V, IB = 0
300
VCE = 60V, IB = 0
300
VEB = 6V, IC = 0
1
60
VCEO
IC = 30mA, IB = 0
hFE1*
VCE = 4V, IC = 1A
70
10
hFE2
VCE = 4V, IC = 3A
VBE
VCE = 4V, IC = 3A
Collector to emitter saturation voltage
VCE(sat)
IC = 3A, IB = 0.375A
Transition frequency
fT
VCE = 10V, IC = 0.5A, f = 10MHz
Turn-on time
ton
Storage time
tstg
Fall time
tf
FE1
0.5 +0.2
–0.1
VCE = 60V, VBE = 0
Base to emitter voltage
*h
0.8±0.1
1.3±0.2
(TC=25˚C)
Parameter
current
1.4±0.1
W
2
■ Electrical Characteristics
Collector cutoff
φ3.1±0.1
5.08±0.5
PC
Ta=25°C
2.7±0.2
Unit
V
80
4.2±0.2
5.5±0.2
7.5±0.2
(TC=25˚C)
Symbol
Collector to
16.7±0.3
■ Absolute Maximum Ratings
10.0±0.2
4.0
●
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
Solder Dip
●
Unit: mm
VCC = 50V
µA
µA
mA
V
80
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
Unit
250
1.8
1.2
V
V
30
MHz
0.5
µs
2.5
µs
0.4
µs
Rank classification
Rank
Q
P
hFE1
70 to 150
120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
1
Power Transistors
2SD1266, 2SD1266A
PC — Ta
IC — VCE
40
(1)
30
20
(2)
10
8
TC=25˚C
4
IB=100mA
90mA
80mA
70mA
60mA
50mA
40mA
3
30mA
2
20mA
1
20
40
60
80 100 120 140 160
2
4
6
8
10
3
2
12
0
hFE — IC
3000
25˚C
1
–25˚C
0.1
0.03
0.3
1
3
300
100
TC=100˚C
25˚C
–25˚C
30
10
3
0.1
0.3
1
3
ICP
t=1ms
10ms
DC
0.3
0.01
3
10
30
2SD1266A
2SD1266
0.1
0.03
100
300
Collector to emitter voltage VCE
10
1000
(V)
0.1
0.3
1
3
Collector current IC (A)
Rth(t) — t
Thermal resistance Rth(t) (˚C/W)
Non repetitive pulse
TC=25˚C
1
30
1
0.01 0.03
10
103
IC
100
3
Area of safe operation (ASO)
30
300
Collector current IC (A)
100
(1) Without heat sink
(2) With a 100 × 100 × 2mm Al heat sink
102
(1)
(2)
10
1
10–1
10–2
10–4
2.4
1000
1
0.01 0.03
10
2.0
VCE=5V
f=10MHz
TC=25˚C
3000
Transition frequency fT (MHz)
Forward current transfer ratio hFE
TC=100˚C
0.1
1.6
fT — IC
1000
0.01
0.01 0.03
1.2
VCE=4V
10
0.3
0.8
10000
IC/IB=8
30
3
0.4
Base to emitter voltage VBE (V)
10000
Collector current IC (A)
Collector current IC (A)
4
Collector to emitter voltage VCE (V)
VCE(sat) — IC
100
1
–25˚C
5
0
0
Ambient temperature Ta (˚C)
3
TC=100˚C
1
0
10
25˚C
6
10mA
(3)
(4)
0
2
VCE=4V
7
Collector current IC (A)
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) With a 50 × 50 × 2mm
Al heat sink
(4) Without heat sink
(PC=2W)
0
Collector to emitter saturation voltage VCE(sat) (V)
IC — VBE
5
Collector current IC (A)
Collector power dissipation PC (W)
50
10–3
10–2
10–1
1
Time t (s)
10
102
103
104
10