Power Transistor Arrays (F-MOS FETs) PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) ■ Features ● High avalanche energy capacity ● High electrostatic breakdown voltage ● No secondary breakdown ● High breakdown voltage, large allowable power dissipation ● Allowing Low-voltage drive unit: mm 4.4±0.5 ● Contactless relay ● Diving circuit for a solenoid ● Driving circuit for a motor ● Control equipment ● Switching power supply 4.0±0.2 8.0 9.5±0.2 ■ Applications 1.65±0.2 25.3±0.2 0.5±0.15 0.8±0.25 1.0±0.25 0.5±0.15 2.54±0.2 9✕2.54=22.86±0.25 C1.5±0.5 ■ Absolute Maximum Ratings (TC = 25°C) Parameter Ratings Unit Drain to Source breakdown voltage VDSS 100 ± 15 V Gate to Source voltage Drain current Avalanche energy capacity * 1 Symbol VGSS ±20 V DC ID ±3 A Pulse IDP Non repetition EAS* Allowable power TC = 25°C dissipation Ta = 25°C ±9 A 22.5 mJ 15 PD Channel temperature Tch 150 °C Storage temperature Tstg −55 to +150 °C 3 4 5 6 7 8 9 10 G: Gate D: Drain S: Source 10-Lead Plastic SIL Package Internal Connection 3 W 3.5 2 5 4 7 6 9 8 2 1 10 L = 5mH, IL = 3A, 1 pulse ■ Electrical Characteristics (TC = 25°C) Parameter Symbol Conditions min typ max Unit Drain to Source cut-off current IDSS VDS = 80V, VGS = 0 10 µA Gate to Source leakage current IGSS VGS = ±20V, VDS = 0 ±10 µA Drain to Source breakdown voltage VDSS ID = 1mA, VGS = 0 85 115 V Gate threshold voltage Vth VDS = 10V, ID = 1mA 1 2.5 V RDS(on)1 VGS = 10V, ID = 2A 300 450 mΩ RDS(on)2 VGS = 4V, ID = 2A 400 600 mΩ −1.6 V Drain to Source ON-resistance Forward transfer admittance | Yfs | VDS = 10V, ID = 2A Diode forward voltage VDSF IDR = 3A, VGS = 0 Input capacitance (Common Source) Ciss 2.5 4 S 130 pF 160 pF Reverse transfer capacitance (Common Source) Crss 25 pF Turn-on time ton 0.2 µs Fall time tf 0.3 µs Turn-off time (delay time) td(off) 1.5 µs Output capacitance (Common Source) Coss VDS = 10V, VGS = 0, f = 1MHz VGS = 10V, ID = 2A VDD = 50V, RL = 25Ω 1 Power Transistor Arrays (F-MOS FETs) PD Ta Area of safe operation (ASO) 100 EAS Tj t=100µs ID 3 1ms 10ms 1 DC 100ms 0.3 0.1 0.03 0.01 25 (1) TC=Ta (2) With a 50 × 50 × 2mm Al heat sink (3) Without heat sink 20 16 (1) 12 8 (2) 4 (3) 0 1 3 10 30 100 300 1000 0 Drain to source voltage VDS (V) 20 40 60 1 0.3 0.1 0.03 0.01 30 6 5 4 3 2 100 ID VDS 4V 3.5V 4 3 3V 2 1 2.5V 15W 0 0 10 20 30 1 2 3 4 5 4 3 2 1 6 0 25 40 50 60 Drain to source voltage VDS (V) 50 75 100 125 150 Case temperature TC (˚C) | Yfs | ID 600 5 TC=25˚C 500 VGS=4V 400 300 10V 200 100 0 Forward transfer admittance |Yfs| (S) Drain to source ON-resistance RDS(on) (Ω) Drain current ID (A) VGS=10V 150 5 RDS(on) ID 7 125 VDS=10V ID=1mA Gate to source voltage VGS (V) 8 100 0 0 L-load (mH) 75 VDS=10V TC=25˚C 0 5 50 Vth TC 1 6 5 6 Gate threshold voltage Vth (V) Drain current ID (A) Avalanche current IAS (A) 22.5mJ 10 10 Junction temperature Tj (˚C) ID 3 15 ID VGS 7 1 20 0 25 80 100 120 140 160 8 TC=25˚C 3 ID=3A Ambient temperature Ta (˚C) IAS L-load 10 2 Avalanche energy capacity EAS (mJ) IDP 10 Allowable power dissipation PD (W) 24 Non repetitive pulse TC=25˚C 30 Drain current ID (A) PU7457 VDS=10V TC=25˚C 4 3 2 1 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain current ID (A) 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain current ID (A) Power Transistor Arrays (F-MOS FETs) VDS, VGS Qg ton, tf, td(off) ID 103 Coss 102 Ciss Crss 10 1 ID=3A TC=25˚C 70 20 40 60 80 100 Drain to source voltage VDS (V) 4.0 14 3.5 12 60 10 50 VDS=25V 8 40 50V 6 30 20 4 VGS 2 10 VDS 0 0 16 0 2 4 6 8 10 0 12 Gate charge amount Qg (nC) Switching time ton,tf,td(off) (µs) 80 f=1MHz TC=25˚C Gate to source voltage VGS (V) 104 Drain to source voltage VDS (V) Input capacitance (Common source), Output capacitance (Common source), Reverse transfer capacitance (Common source) Ciss,Coss,Crss (pF) Ciss, Coss, Crss VDS PU7457 VDD=50V VGS=10V TC=25˚C 3.0 2.5 2.0 1.5 td(off) 1.0 0.5 tf ton 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Drain current ID (A) PZSM tp 10000 Zener diode power PZSM (W) 3000 tp 1000 300 100 30 10 3 1 0.1 0.3 1 3 10 30 100 Pulse width tp (ms) 3