VS-GB75YF120N www.vishay.com Vishay Semiconductors IGBT Fourpack Module, 75 A FEATURES • Square RBSOA • HEXFRED® low Qrr, low switching energy • Positive VCE(on) temperature coefficient • Copper baseplate • Low stray inductance design • Designed and qualified for industrial market • UL approved file E78996 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 ECONO2 4PACK PRODUCT SUMMARY VCES BENEFITS 1200 V • Benchmark efficiency for SMPS appreciation in particular HF welding IC at TC = 67 °C 75 A VCE(on) (typical) 3.4 V Speed 8 kHz to 30 kHz Package ECONO2 Circuit 4 PACK • Rugged transient performance • Low EMI, requires less snubbing • Direct mounting to heatsink space saving • PCB solderable terminals • Low junction to case thermal resistance ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Collector to emitter voltage VCES Continuous collector current IC TEST CONDITIONS MAX. UNITS 1200 V TC = 25 °C 100 TC = 80 °C 67 Pulsed collector current See fig. C.T.5 ICM 200 Clamped inductive load current ILM 200 Diode continuous forward current IF TC = 25 °C 40 TC = 80 °C 25 Diode maximum forward current IFM 150 Gate to emitter voltage VGE ± 20 Maximum power dissipation (IGBT) PD Maximum operating junction temperature TC = 25 °C 480 TC = 80 °C 270 TJ 150 Storage temperature range TStg -40 to +125 Isolation voltage VISOL AC 2500 (min) A V W °C V Revision: 12-Jun-15 Document Number: 93654 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified) PARAMETER Collector to emitter breakdown voltage SYMBOL VBR(CES) Collector to emitter voltage VCE(ON) Gate threshold voltage VGE(th) TEST CONDITIONS VGE = 0 V, IC = 500 μA Zero gate voltage collector current VGE(th)/TJ ICES Diode forward voltage drop VFM Gate to emitter leakage current IGES TYP. MAX. 1200 - - IC = 75 A, VGE = 15 V - 3.4 4.0 IC = 100 A, VGE = 15 V - 3.8 4.5 IC = 75 A, VGE = 15 V, TJ = 125 °C - 4.0 4.5 IC = 100 A, VGE = 15 V, TJ = 125 °C Threshold voltage temperature coefficient MIN. UNITS V - 4.53 5.1 4.0 5.0 6.0 VCE = VGE, IC = 1 mA (25 °C to 125 °C) - -11 - VGE = 0 V, VCE = 1200 V - 7 250 VGE = 0 V, VCE = 1200 V, TJ = 125 °C - 580 2000 IF = 75 A - 3.9 5.0 IF = 100 A - 4.43 5.8 IF = 75 A, TJ = 125 °C - 4.37 5.4 IF = 100 A, TJ = 125 °C - 5.02 6.4 VGE = ± 20 V - - ± 200 nA MIN. TYP. MAX. UNITS - 630 - - 65 - - 250 - - 1.51 - - 2.41 - - 3.92 - - 2.25 - - 3.35 - - 7.60 - - 169 - - 71 - - 393 - - 136 - VCE = VGE, IC = 250 μA mV/°C μA V SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted) PARAMETER SYMBOL Total gate charge (turn-on) QG Gate to emitter charge (turn-on) QGE Gate to collector charge (turn-on) QGC Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on switching loss Eon Turn-off switching loss Eoff Total switching loss Etot Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) TEST CONDITIONS IC = 500 A VCC = 600 V VGE = 15 V IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 , L = 500 μH TJ = 25 °C (1) IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 , L = 500 μH TJ = 125 °C (1) IC = 50 A, VCC = 600 V VGE = 15 V, RG = 4.7 , L = 500 μH TJ = 125 °C tf Reverse bias safe operating area RBSOA TJ = 150 °C, IC = 150 A RG = 10 , VGE = 15 V to 0 V Short circuit safe operating area SCSOA TJ = 150 °C VCC = 900 V, VP = 1200 V RG = 10 , VGE = 15 V to 0 V Diode peak reverse recovery current Irr Diode reverse recovery time trr Total reverse recovery charge Qrr - - TJ = 25 °C - 1.45 2.5 TJ = 125 °C - 2.35 4.0 - 0.401 0.5 - 0.655 0.8 TJ = 25 °C - 0.181 0.4 TJ = 125 °C - 0.54 1.5 TJ = 125 °C VCC = 600 V IF = 75 A dI/dt = 10 A/μs mJ ns Fullsquare 10 TJ = 25 °C nC μs A μs μC Note (1) Energy losses include “tail” and diode reverse recovery Revision: 12-Jun-15 Document Number: 93654 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com Vishay Semiconductors THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER Junction to case IGBT Junction to case DIODE Case to sink, flat, greased surface SYMBOL MIN. TYP. MAX. RthJC (IGBT) - - 0.26 UNITS RthJC (DIODE) - - 1.00 RthCS (MODULE) - 0.05 - 2.7 - 3.3 Nm - 170 - g Mounting torque (M5) Weight °C/W 1000 160 140 100 120 10 IC (A) TC (°C) 100 80 60 1 40 0.1 20 0 0.01 0 20 40 60 80 100 120 1 10 100 I C (A) 1000 10000 VCE (V) Fig. 3 - Forward SOA TC = 25 °C; TJ 150 °C Fig. 1 - Maximum DC Collector Current vs. Case Temperature 1000 500 400 I C (A) PD (W) 100 300 200 10 100 0 1 0 20 40 60 80 100 120 140 160 TC (°C) Fig. 2 - Power Dissipation vs. Case Temperature 10 100 1000 10000 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 150 °C; VGE = 15 V Revision: 12-Jun-15 Document Number: 93654 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com 160 Vishay Semiconductors 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 VCE (V) 100 ICE (A) 16 ICE = 75A ICE = 50A 14 ICE = 25A 18 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 7 6 9 11 15 17 19 VGE (V) VCE (V) Fig. 5 - Typical IGBT Output Characteristics TJ = 25 °C; tp = 500 μs Fig. 8 - Typical VCE vs. VGE TJ = 25 °C 160 20 VGE = 18V VGE = 15V VGE = 12V VGE = 9V 140 120 ICE = 75A ICE = 50A 18 16 ICE = 25A 14 VCE (V) 100 ICE (A) 13 80 60 12 10 8 6 40 4 20 2 0 0 0 1 2 3 4 5 6 7 7 8 9 11 VCE (V) 15 17 19 VGE (V) Fig. 6 - Typical IGBT Output Characteristics TJ = 125 °C; tp = 500 μs Fig. 9 - Typical VCE vs. VGE TJ = 125 °C 300 160 140 TJ = 25°C TJ = 125°C 250 25°C 125°C 120 200 ICE (A) 100 IF (A) 13 80 60 150 100 40 50 20 0 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 VF (V) Fig. 7 - Typical Diode Forward Characteristics tp = 500 μs 5 6 7 8 9 10 11 12 VGE (V) Fig. 10 - Typical Transfer Characteristics VCE = 20 V; tp = 500 μs Revision: 12-Jun-15 Document Number: 93654 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com Vishay Semiconductors 1 1 tdOFF Switching Time (µs) TJ = 125°C ICES (mA) 0.1 0.01 tdON tF 0.1 tR TJ = 25°C 0.001 0.01 400 600 800 1000 1200 20 40 60 80 100 120 140 160 IC (A) VCES (V) Fig. 11 - Typical Zero Gate Voltage Collector Current Fig. 14 - Typical Switching Time vs. IC TJ = 125 °C; L = 200 μH; VCE = 600 V, RG= 5 ; VGE = 15 V 5.5 12 5 10 TJ = 25°C 4.5 125°C IRR (A) Vgeth (V) 8 4 TJ = 125°C 3.5 6 4 3 25°C 2 2.5 2 0 0 0.2 0.4 0.6 0.8 1 0 20 60 80 100 dIF/ dt (A/µs) IC (mA) Fig. 15 - Typical Diode IREC vs. dIF/dt VCC = 600 V; IF = 50 A Fig. 12 - Typical Threshold Voltage 9 800 8 700 7 600 tRR (ns) 6 Energy (mJ) 40 EOFF 5 4 EON 500 125°C 400 300 3 200 2 25°C 100 1 0 0 20 40 60 80 100 120 140 160 IC (A) Fig. 13 - Typical Energy Loss vs. IC TJ = 125 °C; L = 200 μH; VCE = 600 V, RG = 5 ; VGE = 15 V 0 20 40 60 80 100 dIF/ dt (A/µs) Fig. 16 - Typical Diode trr vs. dIF/dt VCC = 600 V; IF = 50 A Revision: 12-Jun-15 Document Number: 93654 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com Vishay Semiconductors 16 1600 14 125°C 1200 12 1000 10 VGE (V) QRR (nC) 1400 800 typical value 8 6 600 4 400 25°C 2 200 0 0 0 20 40 60 80 100 0 dIF/ dt (A/µs) 100 200 300 400 500 600 700 QG, Total Gate Charge (nC) Fig. 17 - Typical Diode Qrr vs. dIF/dt VCC = 600 V; IF = 50 A Fig. 18 - Typical Gate Charge vs. VGE ICE = 5.0 A; L = 600 μH 1 D = 0.50 0.20 Thermal Response (ZthJC ) 0.1 0.10 0.05 0.01 0.02 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-005 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (s) Fig. 19 - Maximum Transient Thermal Impedance, Junction to Case (IGBT) 10 Thermal Response (ZthJC ) D = 0.50 0.20 1 0.10 0.1 0.01 0.05 SINGLE PULSE ( THERMAL RESPONSE ) 0.02 0.01 0.001 1E-006 1E-005 0.0001 0.001 t1, Rectangular Pulse Duration (s) Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (DIODE) Revision: 12-Jun-15 Document Number: 93654 6 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com Vishay Semiconductors Driver L + VCC - D.U.T. 0 D + C - 1K 900 V D.U.T. Fig. 21 - Gate Charge Circuit (Turn-Off) Fig. 23 - S.C. SOA Circuit L Diode clamp/ D.U.T. + - 80 V L + - -5V D.U.T. D.U.T./ Driver 1000 V Rg + VCC Rg Fig. 22 - RBSOA Circuit Fig. 24 - Switching Loss Circuit R= VCC ICM D.U.T. + VCC Rg Fig. 25 - Resistive Load Circuit Revision: 12-Jun-15 Document Number: 93654 7 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB75YF120N www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- G B 75 Y F 120 N 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Insulated gate bipolar transistor (IGBT) 3 - B = IGBT Generation 5 NPT 4 - Current rating (75 = 75 A) 5 - Circuit configuration (Y = Fourpack) 6 - Package indicator (F = ECONO2) 7 - Voltage rating (120 = 1200 V) 8 - Speed/type (N = Ultrafast with reduced diode, speed 8 kHz to 60 kHz) CIRCUIT CONFIGURATION 21 22 48 49 QB1 QB3 40 28 29 41 5 6 7 QB2 QB4 36 32 37 33 46 47 15 16 17 23 24 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95539 Revision: 12-Jun-15 Document Number: 93654 8 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors ECONO2 4PACK N Series DIMENSIONS in millimeters Y2:1 1 Z2:1 0.85 0.6 0.5 1.15 -- 0.02 0.06 0.8 ± 0.03 Ø 6 (x 4) Ø 4.5 Ø 2.2 13.2 ± 0.15 105 ± 0.1 see note (1) 1.15 -- 0.02 0.06 + 10 20.5 - 0.5 Ø 2.6 Y 7.5 Z 1.5 17 ± 0.5 X2:1 Ø 5.5 ± 0.05 5 6 7 7.62 7.62 11.43 11.43 21 ± 0.03 21 22 49 48 10.5 45.4 ± 0.2 23 24 29 28 47 46 33 32 42 ± 0.15 37 36 41 40 21 ± 0.03 22.86 19.05 22.86 7.62 11.43 7.62 3.81 0.8 ± 0.03 15 16 17 11.43 15.24 19.05 22.86 19.05 7.5 - 0.3 26.67 39.49 39.49 93 ± 0.15 107.8 ± 0.2 Revision: 21-Mar-13 Document Number: 95539 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000