Transistor 2SC1473, 2SC1473A Silicon NPN triple diffusion planer type For general amplification 2SC1473 complementary to 2SA1018 2SC1473A complementary to 2SA1767 Unit: mm ■ Features High collector to emitter voltage VCEO. High transition frequency fT. ■ Absolute Maximum Ratings Parameter (Ta=25˚C) Symbol Collector to 2SC1473 base voltage 2SC1473A Collector to 2SC1473 Ratings 250 VCBO 300 200 VCEO emitter voltage 2SC1473A Emitter to base voltage VEBO Peak collector current ICP 300 Unit V V 7 V 100 mA Collector current IC 70 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Symbol 2SC1473 current 2SC1473A Collector to emitter 2SC1473 voltage 2SC1473A 1.27 1.27 1 2 3 2.54±0.15 ICEO VCEO Conditions min typ max VCE = 120V, IB = 0 1 1 IC = 100µA, IC = 0 200 VEBO IE = 1µA, IC = 0 7 hFE* VCE = 10V, IC = 5mA 30 Collector to emitter saturation voltage VCE(sat) IC = 50mA, IB = 5mA Transition frequency fT VCB = 10V, IE = –10mA, f = 200MHz Collector output capacitance Cob VCB = 10V, IE = 0, f = 1MHz µA V 220 1.2 50 Unit V 300 Forward current transfer ratio FE 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A VCE = 120V, IB = 0 Emitter to base voltage *h +0.2 0.45 –0.1 (Ta=25˚C) Parameter Collector cutoff +0.2 0.45 –0.1 2.3±0.2 ● 13.5±0.5 ● 4.0±0.2 5.1±0.2 5.0±0.2 80 V MHz 10 pF Rank classification Rank P Q R hFE 30 ~ 100 60 ~ 150 100 ~ 220 1 Transistor 2SC1473, 2SC1473A IC — VCE 0.7 0.6 0.5 0.4 0.3 0.2 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 20 40 60 80 100 120 140 160 –25˚C 60 40 0 0 2 Collector to emitter saturation voltage VCE(sat) (V) VCE=10V Ta=25˚C 100 80 60 40 20 0 0.8 8 10 1.2 1.6 2.0 10 3 1 25˚C 0.3 Ta=75˚C 0.1 –25˚C 0.01 0.1 0 0.3 1 3 10 30 100 0 60 10 30 Collector current IC (mA) 100 0.6 0.8 1.0 Cob — VCB 140 120 100 80 60 40 0 –1 0.4 10 20 3 0.2 Base to emitter voltage VBE (V) Collector output capacitance Cob (pF) Transition frequency fT (MHz) –25˚C 1 1.0 0.5 VCB=10V Ta=25˚C 25˚C 0.3 1.5 0.03 VCE=10V 120 2.0 2.0 fT — I E Ta=75˚C 1.6 2.5 160 240 1.2 VCE=10V Ta=25˚C 30 hFE — IC 300 0.8 3.0 IC/IB=10 Collector current IC (mA) 360 180 0.4 Base to emitter voltage VBE (V) IB — VBE 100 Base current IB (mA) 0 0.1 0 VCE(sat) — IC 120 0.4 6 Collector to emitter voltage VCE (V) IC — IB 0 4 Base current IB (mA) 20 Ambient temperature Ta (˚C) Collector current IC (mA) Ta=75˚C 80 20 0 0 Forward current transfer ratio hFE 100 1.2mA 80 25˚C 0.1 0 2 VCE=10V Ta=25˚C IB=2mA 1.4mA 100 0.8 IC — VBE 120 1.8mA 1.6mA 0.9 Collector current IC (mA) Collector power dissipation PC (W) 120 Collector current IC (mA) PC — Ta 1.0 IE=0 f=1MHz Ta=25˚C 9 8 7 6 5 4 3 2 1 0 –3 –10 –30 Emitter current IE (mA) –100 1 3 10 30 100 Collector to base voltage VCB (V) Transistor 2SC1473, 2SC1473A ICBO — Ta 104 IEBO — Ta 104 VCB=250V Area of safe operation (ASO) 1000 VEB=5V Single pulse Ta=25˚C 10 102 10 t=10ms IC 30 DC 10 3 1 0.3 1 1 0 40 80 120 160 200 Ambient temperature Ta (˚C) t=1ms 2SC1473A 102 ICP 100 2SC1473 103 IEBO (Ta) IEBO (Ta=25˚C) ICBO (Ta) ICBO (Ta=25˚C) 103 Collector current IC (mA) 300 0.1 0 40 80 120 160 200 Ambient temperature Ta (˚C) 1 3 10 30 100 300 1000 Collector to emitter voltage VCE (V) 3