VS-GB100TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 100 A FEATURES • High short circuit capability, self limiting to 6 x IC • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 150 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS • AC inverter drives PRODUCT SUMMARY VCES 1200 V • Switching mode power supplies IC at TC = 80 °C 100 A • Electronic welders VCE(on) (typical) at IC = 100 A, 25 °C 1.80 V DESCRIPTION Speed 8 kHz to 30 kHz Package INT-A-PAK Circuit Half bridge Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as general inverters and UPS. ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current TC = 25 °C IC ICM (1) UNITS V 200 TC = 80 °C 100 tp = 1 ms 200 A Diode continuous forward current IF Diode maximum forward current IFM Maximum power dissipation PD TJ = 150 °C 650 W Short circuit withstand time tSC TJ = 125 °C 10 μs RMS isolation voltage I2t-value, diode 100 200 VISOL I2t f = 50 Hz, t = 1 min 2500 V VR = 0 V, t = 10 ms, TJ = 125 °C 1050 A2s Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS VGE = 0 V, IC = 1.0 mA, TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 100 A, TJ = 25 °C - 1.80 2.20 VGE = 15 V, IC = 100 A, TJ = 125 °C - 2.05 7.0 UNITS V VGE(th) VCE = VGE, IC = 4.0 mA, TJ = 25 °C 5.0 6.2 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 10-Jun-15 Document Number: 94821 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TP120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time TEST CONDITIONS td(on) Rise time tr Turn-off delay time VCC = 600 V, IC = 100 A, Rg = 5.6 , VGE = ± 15 V, TJ = 25 °C td(off) Fall time tf MIN. TYP. MAX. - 279 - - 61 - - 308 - - 205 - Turn-on switching loss Eon - 5.56 - Turn-off switching loss Eoff - 6.95 - Turn-on delay time td(on) - 287 - tr - 63 - - 328 - Rise time Turn-off delay time VCC = 600 V, IC = 100 A, Rg = 5.6 , VGE = ± 15 V, TJ = 125 °C td(off) Fall time tf - 360 - Turn-on switching loss Eon - 7.85 - Turn-off switching loss Eoff - 10.55 - - 7.43 - - 0.52 - - 0.34 - - 470 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data ISC VGE = 0 V, VCE = 25 V, f = 1.0 MHz, TJ = 25 °C tsc 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 900 V, VCEM 1200 V UNITS ns mJ ns mJ nF A Internal gate resistance Rgint - 2 - Stray inductance LCE - - 30 nH - 0.75 - m UNITS Module lead resistance, terminal to chip RCC’+EE’ TC = 25 °C DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Diode forward voltage VF Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode reverse recovery energy TEST CONDITIONS IF = 100 A IF = 100 A, VR = 600 V, dIF/dt = -2000 A/μs, VGE = -15 V Erec MIN. TYP. MAX. TJ = 25 °C - 1.90 2.30 TJ = 125 °C - 2.00 - TJ = 25 °C - 5.52 - TJ = 125 °C - 11.88 - TJ = 25 °C - 85 - TJ = 125 °C - 103 - TJ = 25 °C - 2.06 - TJ = 125 °C - 5.56 - V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature Storage temperature range Junction to case Case to sink Mounting torque Weight of module IGBT (per 1/2 module) Diode (per 1/2 module) MIN. TYP. MAX. TJ TEST CONDITIONS - - 150 TSTG -40 - 125 RthJC RthCS Conductive grease applied - - 0.19 - - 0.28 - 0.05 - Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 150 UNITS °C K/W Nm g Revision: 10-Jun-15 Document Number: 94821 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TP120N www.vishay.com Vishay Semiconductors 200 30 175 VCC = 600 V Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 25 150 IC (A) Eon, Eoff (mJ) 25 °C 125 125 °C 100 75 20 15 10 Eoff 50 5 25 0 0 0 0.5 1 1.5 2 2.5 0 3 25 50 75 100 125 150 175 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 200 40 175 35 150 Eon, Eoff (mJ) 100 25 °C 75 50 200 VCC = 600 V IC = 100 A VGE = ± 15 V TJ = 125 °C 30 125 °C 125 IC (A) Eon VGE = 15 V Eon 25 20 15 Eoff 10 5 25 VCE = 20 V 0 0 5 6 7 8 9 10 11 12 13 0 10 VGE (V) 20 30 40 50 60 Rg (Ω) Fig. 4 - IGBT Switching Loss vs. Rg Fig. 2 - IGBT Typical Transfer Characteristics 220 200 180 IC, Module 160 IC (A) 140 120 100 80 60 Rg = 5.6 Ω VGE = ± 15 V TJ = 125 °C 40 20 0 0 250 500 750 1000 1250 1500 VCE (V) Fig. 5 - RBSOA Revision: 10-Jun-15 Document Number: 94821 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TP120N www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 200 10 175 9 VCC = 600 V Rg = 5.6 Ω VGE = - 15 V TJ = 125 °C 8 150 25 °C 7 125 °C E (mJ) IF (A) 125 100 6 5 Erec 4 75 3 50 2 25 1 0 0 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 175 VF (V) IF (A) Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. IC 200 8 7 E (mJ) 6 5 Erec 4 3 VCC = 600 V IC = 100 A VGE = - 15 V TJ = 125 °C 2 1 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. Rg Revision: 10-Jun-15 Document Number: 94821 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GB100TP120N www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 10-Jun-15 Document Number: 94821 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000