VS-GT50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES • Low VCE(on) trench IGBT technology • Low switching losses • 10 μs short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C • Low inductance case • Fast and soft reverse recovery antiparallel FWD • Isolated copper baseplate using DCB (Direct Copper Bonding) technology INT-A-PAK • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRODUCT SUMMARY TYPICAL APPLICATIONS VCES 1200 V IC at TC = 80 °C 50 A VCE(on) (typical) at IC = 50 A, 25 °C 1.65 V Speed 8 kHz to 30 kHz Package INT-A-PAK DESCRIPTION Circuit Half bridge Vishay’s IGBT power module provides ultra low conduction loss as well as short circuit ruggedness. It is designed for applications such as UPS and SMPS. • UPS (Uninterruptable Power Supply) • Electronic welders • Switching mode power supplies ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MAX. Collector to emitter voltage VCES 1200 Gate to emitter voltage VGES ± 20 Collector current Pulsed collector current TC = 25 °C IC ICM (1) 50 tp = 1 ms 100 IF 50 Diode maximum forward current IFM (1) 100 RMS isolation voltage PD VISOL V 100 TC = 80 °C Diode continuous forward current Maximum power dissipation UNITS A TJ = 175 °C 405 W f = 50 Hz, t = 1 min 2500 V Note (1) Repetitive rating: pulse width limited by maximum junction temperature. IGBT ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER Collector to emitter breakdown voltage SYMBOL V(BR)CES Collector to emitter voltage VCE(on) Gate to emitter threshold voltage TEST CONDITIONS TJ = 25 °C MIN. TYP. MAX. 1200 - - VGE = 15 V, IC = 50 A, TJ = 25 °C - 1.90 2.35 VGE = 15 V, IC = 50 A, TJ = 175 °C - 2.50 7.5 UNITS V VGE(th) VCE = VGE, IC = 1.4 mA, TJ = 25 °C 5.0 5.5 Collector cut-off current ICES VCE = VCES, VGE = 0 V, TJ = 25 °C - - 5.0 mA Gate to emitter leakage current IGES VGE = VGES, VCE = 0 V, TJ = 25 °C - - 400 nA Revision: 11-Jun-15 Document Number: 94824 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP120N www.vishay.com Vishay Semiconductors SWITCHING CHARACTERISTICS PARAMETER SYMBOL Turn-on delay time MIN. TYP. MAX. td(on) - 148 - tr - 84 - td(off) - 245 - Rise time Turn-off delay time Fall time tf TEST CONDITIONS VCC = 600 V, IC = 50 A, Rg = 15 , VGE = ± 15 V, TJ = 25 °C - 251 - Turn-on switching loss Eon - 5.51 - Turn-off switching loss Eoff - 2.70 - Turn-on delay time td(on) - 263 - tr - 81 - td(off) - 256 - - 292 - Rise time Turn-off delay time Fall time tf VCC = 600 V, IC = 50 A, Rg = 15 , VGE = ± 15 V, TJ = 125 °C Turn-on switching loss Eon - 6.63 - Turn-off switching loss Eoff - 3.25 - Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres SC data tp 10 μs, VGE = 15 V, TJ = 125 °C, VCC = 600 V, VCEM 1200 V ISC - 6.24 - - 0.23 - - 0.15 - - 450 - ns mJ ns mJ nF A LCE - - 30 nH RCC’+EE’ - 0.75 - m UNITS Stray inductance Module lead resistance, terminal to chip VGE = 0 V, VCE = 30 V, f = 1.0 MHz UNITS DIODE ELECTRICAL SPECIFICATIONS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Forward voltage VF Reverse recovery charge Qrr Peak reverse recovery current Irr Reverse recovery energy TEST CONDITIONS IF = 50 A IF = 50 A, VR = 600 V, dIF/dt = -654 A/μs VGE = -15 V Erec MIN. TYP. MAX. TJ = 25 °C - 1.85 2.25 TJ = 125 °C - 1.95 - TJ = 25 °C - 3.1 - TJ = 125 °C - 6.1 - TJ = 25 °C - 24 - TJ = 125 °C - 31 - TJ = 25 °C - 0.98 - TJ = 125 °C - 2.06 - V μC A mJ THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Operating junction temperature Storage temperature range TEST CONDITIONS MIN. TYP. MAX. UNITS TJ - - 175 °C TStg -40 - 125 °C IGBT Junction to case Diode Case to sink (Conductive grease applied) RthJC RthCS - - 0.37 - - 0.49 - 0.05 - Power terminal screw: M5 2.5 to 5.0 Mounting screw: M6 3.0 to 5.0 Mounting torque Weight K/W Nm Weight of module - 150 - g Revision: 11-Jun-15 Document Number: 94824 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP120N www.vishay.com Vishay Semiconductors 100 20 VGE = 15 V 90 80 16 14 25 °C 60 Eon 12 E (mJ) IC (A) 70 50 40 175 °C 10 8 30 6 20 4 10 2 0 Eoff 0 0 1 2 3 0 4 25 50 75 100 VCE (V) IC (A) Fig. 1 - IGBT Typical Output Characteristics Fig. 3 - IGBT Switching Loss vs. IC 20 100 VCE = 50 V 90 VCC = 600 V IC = 50 A VGE = ± 15 V TJ = 125 °C 18 80 16 70 14 60 Eon 12 175 °C 50 E (mJ) IC (A) VCC = 600 V Rg =15 Ω VGE = ± 15 V TJ = 125 °C 18 25 °C 40 10 8 30 6 20 4 10 2 Eoff 0 0 0 2 4 6 8 10 0 12 10 20 30 40 50 60 Rg (Ω) VGE (V) Fig. 2 - IGBT Transfer Characteristics Fig. 4 - IGBT Switching Loss vs. RG 120 Chip 100 Module IC (A) 80 60 40 Rg = 15 Ω VGE = ± 15 V TJ = 125 °C 20 0 0 350 700 1050 1400 VCE (V) Fig. 5 - RBSOA Revision: 11-Jun-15 Document Number: 94824 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP120N www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) IGBT 10-1 10-2 10-3 10-3 10-2 10-1 10-0 101 t (s) Fig. 6 - IGBT Transient Thermal Impedance 100 3.5 90 80 2 Erec 25 °C 70 60 125 °C E (mJ) IF (A) 2.5 VCC = 600 V Rg = 15 Ω VGE = - 15 V TJ = 125 °C 3 50 40 1.5 30 1 20 0.5 10 0 0 1 2 0 3 0 25 VF (V) 50 75 100 IF (A) Fig. 7 - Diode Forward Characteristics Fig. 8 - Diode Switching Loss vs. IF 3 2.5 E (mJ) 2 Erec 1.5 1 VCC = 600 V IF = 50 A VGE = - 15 V TJ = 125 °C 0.5 0 0 10 20 30 40 50 60 Rg (Ω) Fig. 9 - Diode Switching Loss vs. RG Revision: 11-Jun-15 Document Number: 94824 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-GT50TP120N www.vishay.com Vishay Semiconductors 100 ZthJC (K/W) Diode 10-1 10-2 10-3 10-2 10-1 100 101 t (s) Fig. 10 - Diode Transient Thermal Impedance CIRCUIT CONFIGURATION 6 7 1 2 3 5 4 LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95524 Revision: 11-Jun-15 Document Number: 94824 5 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards. Revision: 02-Oct-12 1 Document Number: 91000