Composite Transistors XN04502 (XN4502) Silicon NPN epitaxial planar type Unit: mm 2.90+0.20 –0.05 1.9±0.1 (0.95) (0.95) 6 3 2 1 0.65±0.15 • Two elements incorporated into one package • Reduction of the mounting area and assembly cost by one half 0.30+0.10 –0.05 0.50+0.10 –0.05 ■ Basic Part Number 0.4±0.2 1.50+0.25 –0.05 5 2.8+0.2 –0.3 4 ■ Features 5˚ For general amplification 0.16+0.10 –0.06 1.1+0.2 –0.1 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) VCBO VCEO VEBO 60 50 5 V V V Collector current IC 0.5 A Peak collector current ICP 1 A Total power dissipation PT 300 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 1: Collector (Tr1) 2: Base (Tr2) 3: Emitter (Tr2) EIAJ : SC-74 0 to 0.1 ■ Absolute Maximum Ratings Ta = 25°C 1.1+0.3 –0.1 10˚ • 2SD0602A (2SD602A) × 2 4: Collector (Tr2) 5: Base (Tr1) 6: Emitter (Tr1) Mini6-G1 Package Marking Symbol: 5Q Internal Connection 4 5 Tr2 3 6 Tr1 2 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 60 Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 50 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 Forward current transfer ratio hFE1 VCE = 10 V, IC = 150 mA 85 VCE = 10 V, IC = 500 mA 40 hFE2 Collector-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) * VCE(sat) fT Cob Conditions Min Typ Unit V IC = 300 mA, IB = 30 mA 0.35 VCB = 10 V, IE = −50 mA, f = 200 MHz 200 VCB = 10 V, IE = 0, f = 1 MHz Max 6 0.1 µA 340 0.60 V MHz 15 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Pulse measurement Note) The part number in the parenthesis shows conventional part number. Publication date: August 2003 SJJ00076BED 1 XN04502 PT Ta IC VCE IC I B 800 500 Collector current IC (mA) 200 600 4 mA 400 3 mA 300 2 mA 200 1 mA 40 80 120 0 160 400 300 200 0 0 4 Base-emitter saturation voltage VBE(sat) (V) Ta = 75°C 10−2 10−2 −25°C 10−1 0 1 25°C 1 Ta = −25°C 10−1 10−1 1 VCB = 10 V Ta = 25°C 200 160 120 80 40 −102 12 Ta = 75°C 200 25°C −25°C 150 100 50 2 IC = 2 mA Ta = 25°C 100 80 60 40 20 0 Collector-base voltage VCB (V) SJJ00076BED 10 VCER RBE 4 10 1 120 6 1 10−1 Collector current IC (A) 8 0 10 250 0 10−2 10 f = 1 MHz IE = 0 Ta = 25°C 10 8 VCE = 10 V Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob fT I E 6 hFE IC Collector current IC (A) 240 Emitter current IE (A) 4 300 75°C 10−2 10−2 10 −10 2 Base current IB (mA) IC / IB = 10 10 Collector current IC (A) 0 −1 20 VBE(sat) IC 1 25°C 16 102 IC / IB = 10 10 10−1 12 Collector-emitter voltage VCE (V) VCE(sat) IC 102 8 Forward current transfer ratio hFE 0 Ambient temperature Ta (°C) Collector-emitter saturation voltage VCE(sat) (V) 500 100 Collector-emitter voltage (V) (Resistor between B and E) VCER 0 Transition frequency fT (MHz) 600 100 100 2 VCE = 10 V Ta = 25°C 700 IB = 10 mA 9 mA 8 mA 7 mA 6 mA 5 mA 400 300 800 Ta = 25°C 700 Collector current IC (mA) Total power dissipation PT (mW) 500 102 1 10 102 103 Base-emitter resistance RBE (kΩ) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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