Power Transistors 2SC4545 Silicon NPN epitaxial planar type For medium output power amplification Unit: mm 90˚ • Allowing supply with the radial taping 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 50 V Collector-emitter voltage (Base open) VCEO 40 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1.5 A Peak collector current ICP 3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 10.8±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 1 mA, IE = 0 50 V Collector-emitter voltage (Base open) VCEO IC = 2 mA, IB = 0 40 V Collector-base cutoff current (Emitter open) ICBO VCB = 20 V, IE = 0 1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 100 µA Emitter-base cutoff current (Collector open) IEBO VEB = 5 V, IC = 0 Forward current transfer ratio * hFE VCE = 5 V, IC = 1 A Collector-emitter saturation voltage VCE(sat) Base-emitter saturation voltage VBE(sat) Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit 10 µA 220 IC = 2 A, IB = 0.2 A 1 V IC = 2 A, IB = 0.2 A 1.5 V 50 VCB = 5 V, IE = − 0.5 A, f = 200 MHz 150 MHz VCB = 20 V, IE = 0, f = 1 MHz 35 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank P Q R hFE 50 to 100 80 to 160 120 to 220 Publication date: January 2003 SJD00130BED 1 2SC4545 IC VCE VCE(sat) IC 1.2 TC = 25°C Collector power dissipation PC (W) Without heat sink IB = 10 mA 1.0 Collector current IC (A) 1.6 1.2 0.8 0.4 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 2.0 9 mA 8 mA 0.8 7 mA 6 mA 0.6 5 mA 4 mA 0.4 3 mA 2 mA 0.2 1 mA 0 40 80 120 0 160 0 Ambient temperature Ta (°C) 2 4 Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) 10 −25°C Ta = 75°C 25°C 0.1 0.01 0.01 0.1 1 Ta = 75°C 90 25°C 60 −25°C 30 1 10 0.01 0.01 0.1 30 20 10 10 100 1 10 Collector current IC (A) VCB = 5 V f = 200 MHz TC = 25°C 200 160 120 80 40 0 − 0.01 1 000 − 0.1 −1 −10 Emitter current IE (A) ICBO Ta 103 TC = 25°C VCB = 20 V 50 40 ICBO (Ta) ICBO (Ta = 25°C) Collector-emitter voltage (V) (Resistor between B and E) VCER Collector output capacitance C (pF) (Common base, input open circuited) ob 100 60 −25°C Ta = 75°C VCER RBE Collector-base voltage VCB (V) 2 0.1 Collector current IC (mA) IE = 0 f = 1 MHz Ta = 25°C 1 25°C fT I E 120 0 10 40 0 1 240 150 Cob VCB 50 12 VCE = 5 V Collector current IC (A) 60 10 10 hFE IC 180 IC / IB = 10 1 8 IC / IB = 10 Collector-emitter voltage VCE (V) VBE(sat) IC 100 6 Transition frequency fT (MHz) 0 100 30 20 102 10 10 0 0.001 1 0.01 0.1 1 10 Base-emitter resistance RBE (kΩ) SJD00130BED 0 20 40 60 80 Ambient temperature Ta (°C) 100 2SC4545 Rth t Safe operation area 10 ICP Thermal resistance Rth (°C/W) Collector current IC (A) t = 10 ms 1 IC t=1s 0.1 0.01 0.001 0.1 104 Single pulse TC = 25°C 1 10 100 Without heat sink 103 102 10 1 10−1 10−4 10−3 10−2 Collector-emitter voltage VCE (V) 10−1 1 10 102 103 104 Time t (s) SJD00130BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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