Power Transistors 2SB1435 Silicon PNP epitaxial planar type For low-frequency output amplification Unit: mm 90˚ 10.8±0.2 • Low collector-emitter saturation voltage VCE(sat) • Large collector current IC • Allowing automatic insertion with radial taping 0.85±0.1 1.0±0.1 0.8 C 16.0±1.0 2.5±0.1 0.65±0.1 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −50 V Collector-emitter voltage (Base open) VCEO −50 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −2 A Peak collector current ICP −3 A Collector power dissipation PC 1.5 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.8 C 0.7±0.1 0.7±0.1 1.15±0.2 1.15±0.2 0.4±0.1 0.5±0.1 0.8 C 1 2 2.5±0.2 3 2.05±0.2 ■ Features 4.5±0.2 3.8±0.2 7.5±0.2 2.5±0.2 1: Emitter 2: Collector 3: Base MT-3-A1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emiter open) VCBO IC = −10 µA, IE = 0 −50 V Collector-emitter voltage (Base open) VCEO IC = −1 mA, IB = 0 −50 V Emiter-base voltage (Collector open) VEBO IE = −10 µA, IC = 0 −5 Collector-base cutoff current (Emitter open) ICBO VCB = −20 V, IE = 0 Forward current transfer ratio hFE1 * V − 0.1 µA 340 VCE = −2 V, IC = −200 mA 120 hFE2 VCE = −2 V, IC = −1 A 60 Collector-emitter saturation voltage VCE(sat) IC = −1 A, IB = −50 mA − 0.2 − 0.3 V Base-emitter saturation voltage VBE(sat) IC = −1 A, IB = −50 mA − 0.85 −1.20 V Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob VCB = −10 V, IE = 50 mA, f = 200 MHz 80 VCB = −10 V, IE = 0, f = 1 MHz 45 MHz 60 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S hFE1 120 to 240 170 to 340 Publication date: March 2003 SJD00074BED 1 2SB1435 PC Ta IC VCE Collector current IC (A) 1.2 0.8 0.4 –7mA 1.2 –6mA 0.9 –4mA –5mA –3mA 0.6 –2mA 0.3 0 40 80 120 160 –1mA 0 2 VBE(sat) IC 10 Ta=25˚C 100 10 1 25˚C 320 –25˚C 240 160 80 1 000 1 10 100 200 1 000 160 120 80 40 0 1 000 1 Collector current IC (mA) 10 100 Emitter current IE (mA) Rth t Without heat sink f=1MHz IE=0 TC=25˚C Thermal resistance Rth (°C/W) 100 100 VCB=–10V f=200MHz TC=25˚C 104 120 Ta=25˚C fT I E Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob Ta=–25˚C 0.01 Collector current IC (mA) Ta=75˚C Collector current IC (mA) 80 60 40 103 102 10 1 20 0 1 10 100 10−1 10−4 10−3 10−2 10−1 1 Time t (s) Collector-base voltage VCB (V) 2 Ta=75˚C 240 400 0 1 0.1 VCE=–5V Forward current transfer ratio hFE Base-emitter saturation voltage VBE(sat) (V) Ta=–25˚C 0.1 0.01 1 0.001 10 IC/IB=20 hFE IC 10 Ta=75˚C 8 480 IC/IB=20 1 6 10 Collector-emitter voltage VCE (V) Ambient temperature Ta (°C) 100 4 Transition frequency fT (MHz) Collector power dissipation PC (W) IB=–8mA 1.5 1.6 0 Collector-emitter saturation voltage VCE(sat) (V) Ta=25˚C Without heat sink 0 VCE(sat) IC 1.8 2.0 SJD00074BED 10 102 103 104 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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