Power Transistors 2SB1011 Silicon PNP triple diffusion planar type For low-frequency output amplification Unit: mm 8.0+0.5 –0.1 ■ Features 3.2±0.2 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO −400 V Collector-emitter voltage (Base open) VCEO −400 V Emitter-base voltage (Collector open) VEBO −5 V Collector current IC −100 mA Peak collector current ICP −200 mA Collector power dissipation PC 1.2 W 0.75±0.1 Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.5±0.1 4.6±0.2 1 3.05±0.1 3.8±0.3 1.9±0.1 ■ Absolute Maximum Ratings Ta = 25°C 16.0±1.0 • High collector-base voltage (Emitter open) VCBO • High collector-emitter voltage (Base open) VCEO • Large collector power dissipation PC • Low collector-emitter saturation voltage VCE(sat) 11.0±0.5 φ 3.16±0.1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emiter open) VCBO IC = −100 µA, IE = 0 Conditions −400 Collector-emitter voltage (Base open) VCEO IC = −500 µA, IB = 0 −400 V Emiter-base voltage (Collector open) VEBO IE = −100 µA, IC = 0 −5 V 30 hFE VCE = −5 V, IC = −30 mA Collector-emitter saturation voltage VCE(sat) IC = −50 mA, IB = −5 mA Base-emitter saturation voltage VBE(sat) IC = −50 mA, IB = −5 mA Forward current transfer ratio Transition frequency Collector output capacitance (Common base, input open circuited) fT Cob VCB = −30 V, IE = 20 mA, f = 200 MHz VCB = −30 V, IE = 0, f = 1 MHz Min Typ Max Unit V −2.5 −1.5 70 V V MHz 9 pF Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. Publication date: March 2003 SJD00036BED 1 2SB1011 PC Ta IC VCE IC VBE −120 TC=25˚C −100 Collector current IC (mA) 1.2 0.8 0.4 −80 –0.8mA −60 –0.6mA –0.5mA –0.4mA −40 0 0 40 80 120 160 −2 0 TC=75˚C 25˚C –25˚C −1 −10 –25˚C 0 25˚C 120 –25˚C 80 40 −1 −10 −100 Collector current IC (mA) Single pulse TC=25˚C ICP Collector current IC (A) 20 15 10 t=10ms t=100ms IC t=1s −10 −1 5 −100 Collector-base voltage VCB (V) − 0.1 −1 −10 −100 −1 000 Collector-emitter voltage VCE (V) SJD00036BED − 0.4 − 0.6 − 0.8 −1.0 VCB=–30V f=200MHz TC=25˚C 100 80 60 40 20 0 1 10 100 Emitter current IE (mA) Sefe operation area −1 000 − 0.2 Base-emitter voltage VBE (V) fT I E 160 0 − 0.1 −100 IE=0 f=1MHz TC=25˚C −10 −40 120 Ta=75˚C −100 0 −1 −60 0 −12 200 Cob VCB 25 −10 VCE=–5V Collector current IC (mA) 30 −8 240 Forward current transfer ratio hFE Collector-emitter saturation voltage VCE(sat) (V) −1 − 0.01 − 0.1 −6 −80 hFE IC −10 − 0.1 −4 TC=75˚C Collector-emitter voltage VCE (V) IC/IB=10 25˚C −20 –0.1mA VCE(sat) IC −100 Collector output capacitance C (pF) (Common base, input open circuited) ob –0.3mA –0.2mA Ambient temperature Ta (°C) 2 IB=–1mA –0.7mA −20 0 VCE=–5V −100 –0.9mA Transition frequency fT (MHz) Collector power dissipation PC (W) Without heat sink −120 Collector current IC (mA) 1.6 1 000 2SB1011 Rth t Thermal resistance Rth (°C/W) 104 free air 103 102 10 1 10−1 10−4 10−3 10−2 10−1 1 10 102 103 104 Time t (s) SJD00036BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL