Power Transistors 2SC1568 Silicon NPN epitaxial planar type For low-voltage type medium output power amplification Complementary to 2SA0900 Unit: mm 8.0+0.5 –0.1 3.2±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Symbol 0.75±0.1 Rating 0.5±0.1 Unit 4.6±0.2 Collector-base voltage (Emitter open) VCBO 18 V Collector-emitter voltage (Base open) VCEO 18 V Emitter-base voltage (Collector open) VEBO 5 V Collector current IC 1 A Peak collector current ICP 2 A Collector power dissipation PC 1.2 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3.05±0.1 3.8±0.3 1.9±0.1 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances and high efficiency with a lowvoltage power supply • TO-126B package which incorporates a unique construction enabling installation to the heat sink without using insulation parts 16.0±1.0 ■ Features 11.0±0.5 φ 3.16±0.1 1 2 0.5±0.1 1.76±0.1 2.3±0.2 1: Emitter 2: Collector 3: Base TO-126B-A1 Package 3 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 18 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 18 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 5 Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 18 V, IB = 0 Forward current transfer ratio hFE1 * VCE = 2 V, IC = 500 mA 90 50 hFE2 VCE = 2 V, IC = 1.5 A Collector-emitter saturation voltage VCE(sat) IC = 1 A, IB = 50 mA Base-emitter saturation voltage VBE(sat) IC = 500 mA, IB = 50 mA Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Min Typ Max Unit V 1 µA 10 µA 280 0.5 V 100 1.2 V VCB = 6 V, IE = −50 mA, f = 200 MHz 150 MHz VCB = 6 V, IE = 0, f = 1 MHz 12 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R S hFE1 90 to 155 130 to 210 180 to 280 Publication date: January 2003 SJD00093BED 1 2SC1568 PC Ta IC VCE IC I B 1.2 1.2 TC=25˚C (1)With a 100×100×2mm Al heat sink (2)Without heat sink Class B push pull 1.0 1.0 4 (1) 3 2 (2) 1 VCE=2V TC=25˚C Collector current IC (A) 5 Collector current IC (A) Collector power dissipation PC (W) 6 IB=5.0mA 0.8 4.5mA 4.0mA 3.5mA 0.6 3.0mA 2.5mA 2.0mA 1.5mA 0.4 1.0mA 0.2 0.8 0.6 0.4 0.2 0.5mA 40 80 120 160 1.6 0 2.0 0 2 4 6 8 10 VBE(sat) IC hFE IC TC=100˚C 25˚C –25˚C 0.1 1000 TC=100˚C 1 –25˚C 25˚C 0.1 0.1 TC=100˚C –25˚C 100 25˚C 10 1 0.01 1 Collector current IC (A) 0.1 150 100 50 −10 Emitter current IE (mA) −100 ICBO Ta 104 50 VCB=10V IE=0 f=1MHz TC=25˚C 40 103 ICBO (Ta) ICBO (Ta = 25°C) VCB=6V f=200MHz TC=25˚C 1 Collector current IC (A) Cob VCB Collector output capacitance C (pF) (Common base, input open circuited) ob fT I E 12 VCE=2V IC/IB=10 10 0.01 0.01 1 200 Transition frequency fT (MHz) 1.2 VCE(sat) IC Collector current IC (A) 2 0.8 Base current IB (mA) 1 0 −1 0.4 Collector-emitter voltage VCE (V) IC/IB=20 0.01 0.01 0 Ambient temperature Ta (°C) 10 0.1 0 200 Forward current transfer ratio hFE 0 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) 0 30 20 102 10 10 0 1 10 Collector-base voltage VCB (V) SJD00093BED 100 1 0 40 80 120 Ambient temperature Ta (°C) 160 2SC1568 ICEO Ta 105 Safe operation area 10 VCE=18V Single pulse TC=25˚C ICP Collector current IC (A) ICEO (Ta) ICEO (Ta = 25°C) 104 103 102 1 t=10ms IC t=1s DC 0.1 0.01 10 1 0 40 80 120 Ambient temperature Ta (°C) 160 0.001 0.1 1 10 100 Collector-emitter voltage VCE (V) SJD00093BED 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: • Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. • Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL