Transistors 2SD0965 (2SD965) Silicon NPN epitaxial planar type For low-frequency power amplification For stroboscope Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 0.7±0.1 12.9±0.5 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory operation performances at high efficiency with the lowvoltage power supply. 0.7±0.2 ■ Features ■ Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit VCBO 40 V Collector-emitter voltage (Base open) VCEO 20 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 5 A Peak collector current ICP 8 A Collector power dissipation PC 750 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 0.45+0.15 –0.1 0.45+0.15 –0.1 2.5+0.6 –0.2 2.5+0.6 –0.2 1 2 3 2.3±0.2 Parameter Collector-base voltage (Emitter open) 1: Emitter 2: Collector 3: Base TO-92-B1 Package ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 20 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 V Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0 0.1 µA Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0 1 µA Emitter-base cutoff current (Collector open) IEBO VEB = 7 V, IC = 0 Forward current transfer ratio hFE1 * VCE = 2 V, IC = 0.5 A 230 hFE2 VCE = 2 V, IC = 1 A 150 Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.1 A 0.28 VCB = 6 V, IE = −50 mA, f = 200 MHz 150 VCB = 20 V, IE = 0, f = 1 MHz 26 Transition frequency fT Collector output capacitance (Common base, input open circuited) Cob Conditions Min Typ Max Unit 0.1 µA 600 1.00 V MHz 50 pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank Q R hFE1 230 to 380 340 to 600 Note) The part number in the parenthesis shows conventional part number. Publication date: January 2003 SJC00200BED 1 2SD0965 PC Ta IC VCE IB = 7 mA 400 1.6 5 mA 4 mA 1.2 3 mA 0.8 2 mA 200 0.4 20 40 60 0 80 100 120 140 160 0 Ambient temperature Ta (°C) 0.4 Base-emitter saturation voltage VBE(sat) (V) Collector-emitter saturation voltage VCE(sat) (V) Ta = 75°C 25°C −25°C 0.01 0.1 1 10 75°C 0.1 0.01 0.01 0.1 1 500 300 200 100 −1 −10 1.6 2.0 400 25°C 300 −25°C 200 100 0 0.01 10 0.1 1 10 Collector current IC (A) Safe operation area 100 IE = 0 f = 1 MHz Ta = 25°C Single pulse Ta = 25°C 80 Collector current IC (A) VCB = 6 V Ta = 25°C 1.2 Ta = 75°C Collector current IC (A) 100 0.8 VCE = 2 V Ta = 25°C Ta = −25°C 1 0.4 Base-emitter voltage VBE (V) hFE IC 25°C Collector output capacitance C (pF) (Common base, input open circuited) ob Transition frequency fT (MHz) 0 Cob VCB Emitter current IE (A) 2 2 600 10 fT I E 400 − 0.1 3 0 2.4 IC / IB = 30 Collector current IC (A) 0 − 0.01 2.0 −25°C 4 VBE(sat) IC 1 0.001 0.01 1.6 100 IC / IB = 30 0.1 1.2 Ta = 75°C Collector-emitter voltage VCE (V) VCE(sat) IC 10 0.8 25°C 1 1 mA Forward current transfer ratio hFE 0 VCE = 2 V 5 6 mA Collector current IC (A) 600 6 Ta = 25°C 2.0 800 0 IC VBE 2.4 Collector current IC (A) Collector power dissipation PC (mW) 1 000 60 40 10 ICP IC t=1s t = 10 ms 1 0.1 20 0 1 10 Collector-base voltage VCB (V) SJC00200BED 100 0.01 0.1 1 10 100 Collector-emitter voltage VCE (V) Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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