Transistors 2SD0958 (2SD958) Silicon NPN epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SB0788 (2SB788) Unit: mm 2.5±0.1 (1.0) (1.5) R 0.9 1.0±0.1 2.4±0.2 4.1±0.2 2.0±0.2 R 0.7 4.5±0.1 ■ Features • High collector-emitter voltage (Base open) VCEO • Low noise voltage NV • M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. (1.0) (1.5) 3.5±0.1 (0.4) 6.9±0.1 (0.85) ■ Absolute Maximum Ratings Ta = 25°C 0.45±0.05 Parameter Symbol Rating Unit Collector-base voltage (Emitter open) VCBO 120 V Collector-emitter voltage (Base open) VCEO 120 V Emitter-base voltage (Collector open) VEBO 7 V Collector current IC 20 mA Peak collector current ICP 50 mA Collector power dissipation PC 400 mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 2 (2.5) 1.25±0.05 0.55±0.1 1 1: Base 2: Collector 3: Emitter M-A1 Package (2.5) ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0 120 V Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0 120 V Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0 7 Collector-base cut-off current (Emitter open) ICBO VCB = 50 V, IE = 0 Collector-emitter cutoff current (Base open) ICEO VCE = 50 V, IB = 0 Forward current transfer ratio * hFE VCE = 5 V, IC = 2 mA VCE(sat) IC = 20 mA, IB = 2 mA Collector-emitter saturation voltage Transition frequency Noise voltage Conditions fT VCB = 5 V, IE = −2 mA, f = 200 MHz NV VCE = 40 V, IC = 1 mA, GV = 80 dB Rg = 100 kΩ, Function = FLAT Min Typ Max Unit V 180 100 nA 1 µA 700 0.6 200 V MHz 150 mV Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank R S T hFE 180 to 360 260 to 520 360 to 700 Note) The part number in the parenthesis shows conventional part number. Publication date: November 2002 SJC00199BED 1 2SD0958 IC VCE Collector current IC (mA) 300 200 45 µA 40 µA 16 35 µA 30 µA 12 25 µA 20 µA 8 15 µA 100 10 µA 4 5 µA 0 20 40 60 0 80 100 120 140 160 0 2 Transition frequency fT (MHz) 400 Ta = 75°C 25°C −25°C 100 1 10 100 Noise voltage NV (mV) 25°C 400 200 0 − 0.1 −1 −10 VCE = 10 V GV = 80 dB Function = FLAT Ta = 25°C 120 Rg = 100 kΩ 80 22 kΩ 40 4.7 kΩ 0.1 1 Collector current IC (mA) SJC00199BED Ta = 75°C 0.1 −25°C 0.01 0.1 1 10 100 Collector current IC (mA) Cob VCB 600 NV IC 0 0.01 12 VCB = 5 V Ta = 25°C Emitter current IE (mA) Collector current IC (mA) 160 10 1 fT I E 500 0 0.1 8 800 VCE = 5 V 200 6 IC / IB = 10 10 Collector-emitter voltage VCE (V) hFE IC 600 300 4 100 −100 Collector output capacitance C (pF) (Common base, input open circuited) ob Collector power dissipation PC (mW) 20 400 Ambient temperature Ta (°C) Forward current transfer ratio hFE Ta = 25°C IB = 50 µA 0 2 VCE(sat) IC 24 Collector-emitter saturation voltage VCE(sat) (V) PC Ta 500 8 IE = 0 f = 1 MHz Ta = 25°C 6 4 2 0 1 10 Collector-base voltage VCB (V) 100 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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(8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd. 2002 JUL