PANASONIC 2SC3526

Transistor
2SC3526(H)
Silicon NPN epitaxial planer type
For display video output
Unit: mm
5.9±0.2
4.9±0.2
●
High transition frequency fT.
Small collector output capacitance Cob.
Wide current range.
0.7±0.1
+0.3
●
0.7–0.2
●
8.6±0.2
■ Features
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
110
V
Collector to emitter voltage
VCER*
100
V
+0.2
+0.2
0.45–0.1
0.45–0.1
1.27
Collector to emitter voltage
VCEO
50
V
Emitter to base voltage
VEBO
3.5
V
Peak collector current
ICP
300
mA
Collector current
IC
150
mA
Collector power dissipation
PC
1.0
W
Junction temperature
Tj
150
˚C
Storage temperature
Tstg
–55 ~ +150
˚C
*R
1.27
1
2
3
1:Emitter
2:Collector
3:Base
EIAJ:SC–51
TO–92L Package
EB = 470Ω
■ Electrical Characteristics
Parameter
(Ta=25˚C)
Symbol
Conditions
min
typ
VCE = 35V, IB = 0
max
Unit
10
µA
Collector cutoff current
ICEO
Collector to base voltage
VCBO
IC = 100µA, IE = 0
110
V
Collector to emitter voltage
VCER
IC = 500µA, RBE = 470Ω
100
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
50
V
Emitter to base voltage
VEBO
IE = 100µA, IC = 0
3.5
V
100mA*
Forward current transfer ratio
hFE
VCE = 5V, IC =
Collector to emitter saturation voltage
VCE(sat)
IC = 150mA, IB = 15mA*
Transition frequency
Collector output capacitance
*
(Ta=25˚C)
3.2
■ Absolute Maximum Ratings
13.5±0.5
2.54±0.15
20
0.5
V
fT1
VCB = 10V, IE = –10mA, f = 200MHz
300
MHz
fT2
VCB = 10V, IE = –110mA, f = 200MHz
350
MHz
Cob
VCB = 30V, IE = 0, f = 1MHz
3
pF
Pulse measurement
1
2SC3526(H)
Transistor
PC — Ta
IC — VCE
1.6
IC — VBE
240
120
VCE=5V
1.2
1.0
0.8
0.6
0.4
IB=5.0mA
4.5mA
160
4.0mA
3.5mA
120
3.0mA
2.5mA
80
2.0mA
1.5mA
40
Ta=75˚C
–25˚C
80
60
40
20
1.0mA
0.2
25˚C
100
Collector current IC (mA)
200
Collector current IC (mA)
Collector power dissipation PC (W)
Ta=25˚C
1.4
0.5mA
0
0
20
40
60
80 100 120 140 160
0
0
Ambient temperature Ta (˚C)
2
10
3
1
Ta=75˚C
25˚C
–25˚C
0.1
0.03
0.01
30
100
300
1000
Collector current IC (mA)
Collector output capacitance Cob (pF)
IE=0
f=1MHz
Ta=25˚C
5
4
3
2
1
0
1
3
10
30
100
Collector to base voltage VCB (V)
2
0
0.2
0.4
0.6
1.0
600
100
80
60
Ta=75˚C
25˚C
40
–25˚C
20
0
0.1
0.8
Base to emitter voltage VBE (V)
fT — I E
0.3
1
3
10
30
Collector current IC (mA)
Cob — VCB
6
12
VCE=5V
Forward current transfer ratio hFE
Collector to emitter saturation voltage VCE(sat) (V)
30
10
10
120
IC/IB=10
3
8
hFE — IC
100
1
6
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.3
4
VCB=10V
Ta=25˚C
Transition frequency fT (MHz)
0
100
500
400
300
200
100
0
–1
–3
–10
–30
–100 –300 –1000
Emitter current IE (mA)