Transistor 2SC3187 Silicon NPN triple diffusion planer type For small TV video output Unit: mm 5.0±0.2 ● High collector to emitter voltage VCEO. Small collector output capacitance Cob. 13.5±0.5 ● 5.1±0.2 ■ Features 4.0±0.2 (Ta=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO 7 V Peak collector current ICP 200 mA Collector current IC 100 mA Collector power dissipation PC 750 mW Junction temperature Tj 150 ˚C Storage temperature Tstg –55 ~ +150 ˚C ■ Electrical Characteristics Parameter +0.2 +0.2 0.45 –0.1 0.45 –0.1 1.27 1.27 2.3±0.2 ■ Absolute Maximum Ratings 1 2 3 2.54±0.15 1:Emitter 2:Collector 3:Base JEDEC:TO–92 EIAJ:SC–43A (Ta=25˚C) Symbol Conditions min typ max Unit Collector to base voltage VCBO IC = 10µA, IE = 0 300 V Collector to emitter voltage VCEO IC = 100µA, IB = 0 300 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 Forward current transfer ratio hFE VCE = 50V, IC = 5mA 50 V 250 Base to emitter voltage VBE VCE = 10V, IC = 30mA 1.2 V Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA 1.5 V Transition frequency fT VCB = 30V, IE = –20mA, f = 200MHz Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz 70 140 MHz 1.9 pF 1 2SC3187 Transistor PC — Ta IC — VCE 1.0 IC — VBE 120 240 VCE=5V 0.6 0.4 0.2 100 1.2mA 80 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) 10 10 Ta=75˚C 25˚C –25˚C 0.3 0.1 0.03 30 40 50 60 10 30 100 300 25˚C 160 –25˚C 120 80 40 1 3 10 30 100 300 1000 Collector current IC (mA) Cob — VCB IE=0 f=1MHz Ta=25˚C 4 2 Ta=25˚C Single pulse 300 Collector current IC (mA) 6 ICP t=2.0ms 100 IC t=1s 30 10 3 1 0.3 0 0.1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 1.6 2.0 VCB=30V Ta=25˚C 1 3 10 30 100 300 200 160 120 80 40 0 –1 –3 –10 –30 Emitter current IE (mA) Area of safe operation (ASO) 1000 8 1.2 Ta=75˚C 200 1000 10 0.8 240 Collector current IC (mA) 1 0.4 Base to emitter voltage VBE (V) fT — I E 0 3 0 VCE=50V 0.01 1 Collector output capacitance Cob (pF) 20 240 Forward current transfer ratio hFE Collector to emitter saturation voltage VCE(sat) (V) 30 1 80 hFE — IC IC/IB=10 3 120 Collector to emitter voltage VCE (V) VCE(sat) — IC 100 –25˚C 0 0 Transition frequency fT (MHz) 20 Ta=75˚C 160 40 0 0 25˚C 200 20 0 2 1.6mA Collector current IC (mA) 0.8 Collector current IC (mA) Collector power dissipation PC (W) Ta=25˚C IB=2.0mA 1000 Collector to emitter voltage VCE (V) –100