Single N-channel MOSFET ELM16408EA-S ■General description ■Features ELM16408EA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 1.8V and internal ESD protection is included. • • • • • • • Vds=20V Id=8.8A (Vgs=10V) Rds(on) < 18mΩ (Vgs=10V) Rds(on) < 20mΩ (Vgs=4.5V) Rds(on) < 25mΩ (Vgs=2.5V) Rds(on) < 32mΩ (Vgs=1.8V) ESD Rating : 2000V HBM ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Gate-source voltage Vds Vgs Ta=25°C Ta=70°C Continuous drain current 20 ±12 8.8 7.0 40 Id Pulsed drain current Idm Tc=25°C Tc=70°C Power dissipation Pd Junction and storage temperature range Tj, Tstg V V 2.00 1.28 -55 to 150 A 1 A 2 W °C ■Thermal characteristics Parameter Maximum junction-to-ambient Symbol t≤10s Maximum junction-to-ambient Maximum junction-to-lead Steady-state Steady-state Rθja Rθjl ■Pin configuration Typ. 47.5 Max. 62.5 Unit °C/W 74.0 37.0 110.0 40.0 °C/W °C/W 1 5 2 4 3 1 3 ■Circuit SOT-26(TOP VIEW) 6 Note D Pin No. Pin name 1 2 3 DRAIN DRAIN GATE 4 5 6 SOURCE DRAIN DRAIN 4-1 G S Single N-channel MOSFET ELM16408EA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit Condition BVdss Id=250μA, Vgs=0V Zero gate voltage drain current Idss Gate-body leakage current Gate-source breakdown voltage Gate threshold voltage On state drain current Igss BVgso Vgs(th) Id(on) 20 Vds=16V, Vgs=0V Static drain-source on-resistance 10 25 ±10 Ta=55°C Vds=0V, Vgs=±10V Vds=0V, Ig=±250μA Vds=Vgs, Id=250μA Vgs=4.5V, Vds=5V Vgs=10V, Id=8.8A V Ta=125°C Rds(on) Vgs=4.5V, Id=8A Vgs=2.5V, Id=6A Vgs=1.8V, Id=4A Forward transconductance Gfs Vds=5V, Id=8.8A Diode forward voltage Vsd Is=1A Max. body-diode continuous current Is DYNAMIC PARAMETERS Input capacitance Ciss Output capacitance Coss Vgs=0V, Vds=10V, f=1MHz Reverse transfer capacitance Crss Gate resistance Rg Vgs=0V, Vds=0V, f=1MHz SWITCHING PARAMETERS Total gate charge Qg Gate-source charge Qgs Vgs=4.5V, Vds=10V, Id=8.8A Gate-drain charge Qgd Turn-on delay time td(on) Vgs=10V, Vds=10V tr Turn-on rise time td(off) RL=1.1Ω, Rgen=3Ω Turn-off delay time Turn-off fall time tf Body diode reverse recovery time trr If=8.8A, dIf/dt=100A/μs Body diode reverse recovery charge Qrr If=8.8A, dIf/dt=100A/μs ±12 0.50 40 0.75 1.00 14.4 18.5 16.0 20.5 25.6 33 0.72 18.0 23.0 20.0 25.0 32.0 1810 232 200 1.6 2200 17.9 1.5 4.7 3.3 5.9 44.0 7.7 22.0 9.8 22.0 1.00 3 2.2 27.0 μA μA V V A mΩ mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC ns ns ns ns ns nC NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM16408EA-S ■Typical electrical and thermal characteristics 40 10V 20 4.5V 2V 2.5V Id(A) Id (A) Vds=5V 16 30 20 12 125°C 8 10 4 Vgs=1.5V 0 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 0 5 40 0.5 1 1.5 2 Vgs(Volts) Figure 2: Transfer Characteristics 2.5 1.6 Vgs=2.5V,6A 30 Normalized On-Resistance Vgs=1.8V Rds(on) (m� ) 25°C Vgs=4.5V 20 0 0 5 10 15 Vgs=1.8V, 4A 1.2 Vgs=10V 10 Vgs=4.5V, 8A 1.4 Vgs=2.5V Vgs=10V, 8.8A 1 0.8 20 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 40 1.0E+00 Id=6A 125°C 1.0E-01 125°C Is (A) Rds(on) (m� ) 30 20 1.0E-02 25°C 25°C 1.0E-03 10 1.0E-04 0 0 2 4 6 8 1.0E-05 10 0.0 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 4-3 1.2 Single N-channel MOSFET ELM16408EA-S 5 2800 Vds=10V Id=8.8A 2400 Capacitance (pF) Vgs (Volts) 4 3 2 2000 1600 1200 Coss 800 1 Crss 400 0 0 0 4 8 12 16 Qg (nC) Figure 7: Gate-Charge Characteristics 0 20 100.0 Rds(on) limited 100�s 10ms 0.1s 1.0 1s Tj(max)=150°C Ta=25°C Z� ja Normalized Transient Thermal Resistance Tj(max)=150°C Ta=25°C 10 10s 0.1 0 0.001 1 10 Vds (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 20 20 DC 0.1 10 15 Vds (Volts) Figure 8: Capacitance Characteristics 30 1ms Power (W) 10.0 5 40 10�s Id (Amps) Ciss D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=62.5°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) 100 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 Pd 0.1 0.01 0.00001 Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000