Single N-channel MOSFET ELM17412GA-S ■General description ■Features ELM17412GA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and operation with gate voltages as low as 2.5V. • • • • • Vds=30V Id=2.1A (Vgs=10V) Rds(on) < 90mΩ (Vgs=10V) Rds(on) < 100mΩ (Vgs=4.5V) Rds(on) < 160mΩ (Vgs=2.5V) ■Maximum absolute ratings Parameter Ta=25°C. Unless otherwise noted. Limit Unit Note Symbol Drain-source voltage Vds 30 V Gate-source voltage Vgs ±12 2.1 V Ta=25°C Continuous drain current Id Ta=70°C Pulsed drain current 1.7 10 0.625 Idm Tc=25°C Power dissipation Pd Tc=70°C Junction and storage temperature range Tj, Tstg 0.400 -55 to 150 A 1 A 2 W 1 °C ■Thermal characteristics Parameter Symbol Typ. Max. Unit Note Maximum junction-to-ambient Maximum junction-to-ambient t≤10s Steady-state Rθja 175 200 200 250 °C/W °C/W 1 Maximum junction-to-lead Steady-state Rθjl 130 160 °C/W 3 ■Pin configuration ■Circuit D SC-70-6(TOP VIEW) 6 1 5 2 4 3 Pin No. Pin name 1 2 3 DRAIN DRAIN GATE 4 5 6 SOURCE DRAIN DRAIN 4- 1 G S Single N-channel MOSFET ELM17412GA-S ■Electrical characteristics Parameter STATIC PARAMETERS Drain-source breakdown voltage Symbol Condition BVdss Id=250μA, Vgs=0V 100 nA 1.5 1.8 V A 69 90 108 130 Vgs=4.5V, Id=1.3A Vgs=2.5V, Id=1A 78 130 100 160 mΩ mΩ Vds=5V, Id=2.1A Is=1A, Vgs=0V 8.5 0.8 1.0 S V 2.5 A 270 pF 39 29 1.4 1.7 pF pF Ω 3.0 3.6 nC Vds=16V, Vgs=0V Gate-body leakage current Igss Vds=0V, Vgs=±12V Vgs=10V, Id=2.1A Forward transconductance Diode forward voltage Max. body-diode continuous current DYNAMIC PARAMETERS Input capacitance Gfs Vsd Ciss Coss Crss Rg Gate-source charge Gate-drain charge Turn-on delay time Qgs Qgd Body diode reverse recovery time Body diode reverse recovery charge Ta=125°C 1.0 10 Is Output capacitance Reverse transfer capacitance Gate resistance SWITCHING PARAMETERS Total gate charge Turn-on rise time Turn-off delay time Turn-off fall time Ta=55°C Vgs(th) Vds=Vgs, Id=250μA Id(on) Vgs=4.5V, Vds=5V Rds(on) V μA Idss Static drain-source on-resistance 30 1 5 Zero gate voltage drain current Gate threshold voltage On state drain current Ta=25°C. Unless otherwise noted. Min. Typ. Max. Unit 226 Vgs=0V, Vds=15V, f=1MHz Vgs=0V, Vds=0V, f=1MHz Qg Vgs=4.5V, Vds=15V, Id=2.1A 0.4 1.2 mΩ nC nC td(on) 2.8 4.0 ns tr Vgs=5V, Vds=15V td(off) RL=7.1Ω, Rgen=6Ω 2.1 17.4 3.0 21.0 ns ns 2.1 9.1 3.4 3.0 11.0 4.0 ns ns nC tf trr Qrr If=2.1A, dIf/dt=100A/μs If=2.1A, dIf/dt=100A/μs NOTE : 1. The value of Rθja is measured with the device mounted on 1in² FR-4 board of 2oz. Copper, in still air environment with Ta=25°C. The value in any given applications depends on the user’s specific board design, The current rating is based on the t ≤ 10s themal resistance rating. 2. Repetitive rating, pulse width limited by junction temperature. 3. The Rθja is the sum of the thermal impedance from junction to lead Rθjl and lead to ambient. 4. The static characteristics in Figures 1 to 6 are obtained using 80μs pulses, duty cycle 0.5%max. 5. These tests are performed with the device mounted on 1in² FR-4 board with 2oz. Copper, in a still air environment with Ta=25°C. The SOA curve provides a single pulse rating. 4-2 Single N-channel MOSFET ELM17412GA-S ■Typical electrical and thermal characteristics 10 15 10V 3.5V 4V 6V 8 3V 6 9 Id(A) Id (A) 12 6 4 Vgs=2.5V 125°C 25°C 2 3 0 0 0 1 2 3 4 Vds (Volts) Fig 1: On-Region Characteristics 5 0 0.5 1 1.5 2 2.5 3 Vgs(Volts) Figure 2: Transfer Characteristics 3.5 160 Rds(on) (m� ) Normalized On-Resistance 1.8 140 Vgs=2.5V 120 Vgs=4.5V 100 80 Vgs=10V 60 0 1 2 3 4 5 Vgs=4.5V 1.6 1.4 Vgs=10V Id=2.1A 1.2 Vgs=2.5V Id=1A 1 0.8 6 0 Id (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 180 160 1.0E+00 Id=2.1A 140 1.0E-01 125°C Is (A) Rds(on) (m� ) Id=1.3A 120 125°C 1.0E-02 100 25°C 1.0E-03 25°C 80 1.0E-04 60 1 2 3 4 5 6 7 8 Vgs (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 Vsd (Volts) Figure 6: Body-Diode Characteristics 4- 3 1.2 Single N-channel MOSFET ELM17412GA-S 400 5 300 Capacitance (pF) Vgs (Volts) 350 =10V Vds=15V ID=2.2A Id=2.1A 4 3 2 Ciss 250 200 150 100 1 50 0 0 0.5 1 1.5 2 2.5 3 Qg (nC) Figure 7: Gate-Charge Characteristics 0 3.5 0 100.0 Power (W) Id (Amps) 1ms Rds(on) limited 10ms 100m 1.0 10s 12 8 4 1s DC 1 10 0 0.1 100 Vds (Volts) Z�ja Normalized Transient Thermal Resistance 1 D=Ton/T Tj,pk=Ta+Pdm.Z�ja.R�ja R�ja=250°C/W 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note 5) Figure 9: Maximum Forward Biased Safe Operating Area (Note 5) 10 15 Tj(max)=150°C Ta=25°C 16 10.0 0.1 10 Vds (Volts) Figure 8: Capacitance Characteristics 20 Tj(max)=150°C Ta=25°C 0.1 5 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 P Pd 0.01 0.001 0.00001 T Ton Single Pulse 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 4-4 100 1000