PMGD175XNE 30 V, Dual N-channel Trench MOSFET 15 April 2016 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (TSSOP6) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Low threshold voltage Very fast switching Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -12 - 12 V ID drain current - - 0.95 A - 211 252 mΩ Per transistor VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics (per transistor) RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D1 4 D2 G1 1 2 G2 3 TSSOP6 (SOT363) S1 S2 017aaa256 6. Ordering information Table 3. Ordering information Type number PMGD175XNE Package Name Description Version TSSOP6 plastic surface-mounted package; 6 leads SOT363 7. Marking Table 4. Marking codes Type number Marking code [1] PMGD175XNE LU% [1] PMGD175XNE Product data sheet % = placeholder for manufacturing site code All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 2 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -12 12 V ID drain current Per transistor VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 0.95 A VGS = 4.5 V; Tamb = 25 °C [1] - 0.87 A VGS = 4.5 V; Tamb = 100 °C [1] - 0.5 A - 4 A [2] - 260 mW [1] - 310 mW - 905 mW - 390 mW IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tsp = 25 °C Per device Ptot total power dissipation Tamb = 25 °C Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 0.31 A [2] Source-drain diode IS source current PMGD175XNE Product data sheet Tamb = 25 °C [1] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for [2] drain 6 cm . Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 3 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2. - 25 25 75 125 175 Normalized continuous drain current as a function of junction temperature aaa-022576 10 ID (A) Tj (°C) tp = 10 µs Limit RDSon = VDS/ID 100 µs 1 1 ms DC; Tsp = 25 °C 10-1 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-2 10-1 1 100 ms 10 VDS (V) 102 IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 4 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 9. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient in free air Min Typ Max Unit [1] - 417 480 K/W [2] - 352 405 K/W [2] - 295 340 K/W - 120 138 K/W - - 320 K/W Per transistor Rth(j-a) Rth(j-sp) in free air; t ≤ 5 s thermal resistance from junction to solder point Per device Rth(j-a) thermal resistance from junction to ambient [1] [2] in free air [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . aaa-022577 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.20 0.50 0.25 0.10 0.05 0.02 0.01 0 10 1 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 5 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET aaa-022578 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.20 0.50 0.25 0.10 0.05 10 0.02 0.01 0 1 10-3 10-2 10-1 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 1 10 102 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 6 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.75 1 1.25 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 10 µA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - -10 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - -5 µA VGS = 4.5 V; ID = 0.9 A; Tj = 25 °C - 211 252 mΩ VGS = 4.5 V; ID = 0.9 A; Tj = 150 °C - 344 411 mΩ VGS = 2.5 V; ID = 0.8 A; Tj = 25 °C - 267 319 mΩ VDS = 10 V; ID = 0.9 A; Tj = 25 °C - 3.5 - S RDSon gfs drain-source on-state resistance forward transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge VDS = 15 V; ID = 0.9 A; VGS = 4.5 V; - 1.05 1.65 nC QGS gate-source charge Tj = 25 °C - 0.15 - nC QGD gate-drain charge - 0.27 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 81 - pF Coss output capacitance Tj = 25 °C - 13 - pF Crss reverse transfer capacitance - 9 - pF td(on) turn-on delay time VDS = 15 V; ID = 0.9 A; VGS = 4.5 V; - 7 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 14 - ns td(off) turn-off delay time - 17 - ns tf fall time - 6 - ns - 0.7 1.2 V Source-drain diode (per transistor) VSD source-drain voltage PMGD175XNE Product data sheet IS = 0.3 A; VGS = 0 V; Tj = 25 °C All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 7 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET aaa-022730 4 4.5 V ID (A) 3.0 V aaa-022731 10-2 2.6 V ID (A) 2.5 V 10-3 3 2.2 V min typ max 10-4 2 2.0 V 10-5 1.8 V 1 VGS = 1.6 V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 0.5 Tj = 25 °C VDS = 10 V Output characteristics: drain current as a function of drain-source voltage; typical values Fig. 7. Tj = 25 °C aaa-022732 1.2 1.6 V 1.8 V 2.0 V 2.2 V 1.0 1.5 2.0 Sub-threshold drain current as a function of gate-source voltage aaa-022733 1.0 2.5 V VGS (V) RDSon (Ω) RDSon (Ω) 0.8 0.8 0.6 0.4 0.4 0.2 VGS = 4.5 V 0 0 1 2 3 VDS (V) 0 4 Tj = 25 °C Fig. 8. Tj = 150 °C 3.0 V Product data sheet 0 4 8 VGS (V) 12 ID = 1 A Drain-source on-state resistance as a function of drain current; typical values PMGD175XNE Tj = 25 °C Fig. 9. Drain-source on-state resistance as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 8 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET aaa-022734 3 aaa-022735 2.0 a ID (A) 1.5 2 1.0 1 Tj = 150 °C 0.5 Tj = 25 °C 0 0 1 2 0 -60 3 VGS (V) VDS > ID x RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 60 120 180 aaa-022737 103 VGS(th) (V) Tj (°C) Fig. 11. Normalized drain-source on-state resistance as a function of ambient temperature; typical values aaa-022736 2.0 0 C (pF) 1.5 102 1.0 Ciss max Coss 10 typ 0.5 Crss min 0 -60 0 60 120 Tj (°C) 1 10-1 180 ID = 250 μA; VDS = VGS Product data sheet 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of ambient temperature PMGD175XNE 1 Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 9 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET aaa-022738 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 1 0 QGS2 0 0.5 1.0 QG (nC) QGS QGD QG(tot) 003aaa508 Fig. 15. Gate charge waveform definitions 1.5 VDS = 15 V; ID = 0.91 A Fig. 14. Gate-source voltage as a function of gate charge; typical values aaa-022739 0.3 IS (A) 0.2 0.1 Tj = 150 °C Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1.0 VSD (V) VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 11. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 10 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 6 leads SOT363 D B E y A X HE 6 5 v M A 4 Q pin 1 index A 1 2 e1 A1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC SOT363 JEITA SC-88 EUROPEAN PROJECTION ISSUE DATE 04-11-08 06-03-16 Fig. 18. Package outline TSSOP6 (SOT363) PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 11 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 13. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363) 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 20. Wave soldering footprint for TSSOP6 (SOT363) PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 12 / 16 PMGD175XNE NXP Semiconductors 30 V, Dual N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMGD175XNE v.1 20160415 Product data sheet - - PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. 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Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................................. 2 7 Marking ................................................................... 2 8 Limiting values .......................................................3 9 Thermal characteristics .........................................5 10 Characteristics ....................................................... 7 11 Test information ................................................... 10 12 Package outline ................................................... 11 13 Soldering .............................................................. 12 14 Revision history ................................................... 13 15 15.1 15.2 15.3 15.4 Legal information .................................................14 Data sheet status ............................................... 14 Definitions ...........................................................14 Disclaimers .........................................................14 Trademarks ........................................................ 15 © NXP Semiconductors N.V. 2016. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 15 April 2016 PMGD175XNE Product data sheet All information provided in this document is subject to legal disclaimers. 15 April 2016 © NXP Semiconductors N.V. 2016. All rights reserved 16 / 16