PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Trench MOSFET technology • Very fast switching • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm • Exposed drain pad for excellent thermal conduction • Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications • Charging switch for portable devices • DC-to-DC converters • Power management in battery-driven portables • Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 30 V VGS gate-source voltage -12 - 12 V ID drain current - - 5.5 A - 37 47 mΩ VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] Static characteristics RDSon drain-source on-state resistance [1] VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this product PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 D drain 2 D drain 3 G gate 4 S source 5 D drain 6 D drain 7 D drain 8 S source Simplified outline 1 Graphic symbol D 6 7 2 3 8 5 G 4 S 017aaa253 Transparent top view DFN2020MD-6 (SOT1220) 3. Ordering information Table 3. Ordering information Type number Package Name PMPB33XN Description Version DFN2020MD-6 plastic thermal enhanced ultra thin small outline package; no leads; 6 terminals SOT1220 4. Marking Table 4. Marking codes Type number Marking code PMPB33XN 1P 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage -12 12 V ID drain current VGS = 4.5 V; Tamb = 25 °C; t ≤ 5 s [1] - 5.5 A VGS = 4.5 V; Tamb = 25 °C [1] - 4.3 A VGS = 4.5 V; Tamb = 100 °C [1] - 2.7 A - 17 A - 1.5 W IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 [1] © NXP B.V. 2012. All rights reserved 2 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET Symbol Parameter Conditions Tamb = 25 °C; t ≤ 5 s [1] Tsp = 25 °C Min Max Unit - 2.4 W - 8.3 W Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 1.7 A Source-drain diode IS source current [1] Tamb = 25 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) Normalized total power dissipation as a function of junction temperature PMPB33XN Product data sheet 0 - 75 175 Fig. 2. - 25 75 125 Tj (°C) 175 Normalized continuous drain current as a function of junction temperature All information provided in this document is subject to legal disclaimers. 6 July 2012 25 © NXP B.V. 2012. All rights reserved 3 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 017aaa624 102 ID (A) Limit RDSon = VDS/ID 10 tp = 100 µs 1 tp = 1 ms DC; Tsp = 25 °C tp = 10 ms DC; Tamb = 25 °C; drain mounting pad 6 cm2 10-1 10-2 10-2 10-1 tp = 100 ms 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) thermal resistance from junction to solder point PMPB33XN Product data sheet Min Typ Max Unit [1] - 245 280 K/W [2] - 74 85 K/W [3] - 45 52 K/W - 10 15 K/W [1] [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm , t ≤ 5 s 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 017aaa625 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa626 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 1 0.01 0 10-1 10-5 10-4 10-3 10-2 FR4 PCB, mounting pad for drain 6 cm Fig. 5. 10-1 1 102 10 tp (s) 103 2 Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.45 0.8 1.2 V IDSS drain leakage current VDS = 30 V; VGS = 0 V; Tj = 25 °C - - 1 µA VDS = 30 V; VGS = 0 V; Tj = 150 °C - - 100 µA PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -12 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 4.5 V; ID = 4.3 A; Tj = 25 °C - 37 47 mΩ VGS = 4.5 V; ID = 4.3 A; Tj = 150 °C - 63 80 mΩ VGS = 2.5 V; ID = 1 A; Tj = 25 °C - 55 76 mΩ RDSon drain-source on-state resistance gfs forward transconductance VDS = 10 V; ID = 4.3 A; Tj = 25 °C - 20 - S RG gate resistance f = 1 MHz - 9.8 - Ω Dynamic characteristics QG(tot) total gate charge VDS = 15 V; ID = 4.3 A; VGS = 4.5 V; - 5.1 7.6 nC QGS gate-source charge Tj = 25 °C - 1 - nC QGD gate-drain charge - 1.3 - nC Ciss input capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; - 505 - pF Coss output capacitance Tj = 25 °C - 57 - pF Crss reverse transfer capacitance - 48 - pF td(on) turn-on delay time VDS = 15 V; ID = 4.3 A; VGS = 4.5 V; - 6 - ns tr rise time RG(ext) = 6 Ω; Tj = 25 °C - 17 - ns td(off) turn-off delay time - 21 - ns tf fall time - 20 - ns - 0.8 1.2 V Source-drain diode VSD source-drain voltage IS = 1.7 A; VGS = 0 V; Tj = 25 °C 017aaa627 20 10 V ID (A) 4.5 V 16 017aaa628 10-3 3.0 V ID (A) VGS = 2.5 V 10-4 12 min 2.2 V 8 0 Fig. 6. max 10-5 2.0 V 4 typ 1.8 V 0 1 2 3 VDS (V) 10-6 4 0 0.5 1.0 VGS (V) 1.5 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 017aaa629 0.20 1.8 V 1.95 V 2V 017aaa630 0.20 2.3 V RDSon (Ω) RDSon (Ω) 0.15 0.15 0.10 0.10 2.5 V Tj = 25 °C 0.05 0.05 4.5 V VGS = 10 V 0 0 4 8 ID (A) Tj = 150 °C 0 12 Tj = 25 °C Fig. 8. 0 1 2 3 4 VGS (V) 5 ID = 4.3 A Drain-source on-state resistance as a function of drain current; typical values Fig. 9. 017aaa631 16 Drain-source on-state resistance as a function of gate-source voltage; typical values 017aaa632 1.8 ID (A) a 12 1.4 8 1.0 4 Tj = 150 °C 0 0 1 Tj = 25 °C 2 VGS (V) 0.6 -60 3 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values PMPB33XN Product data sheet 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 7 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 017aaa633 2.0 017aaa634 103 VGS(th) (V) Ciss C (pF) 1.5 max 1.0 102 typ Coss Crss 0.5 min 0 -60 0 60 120 Tj (°C) 10 10-1 180 ID = 0.25 mA; VDS = VGS 1 10 VDS (V) 102 f = 1 MHz; VGS = 0 V Fig. 12. Gate-source threshold voltage as a function of junction temperature Fig. 13. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values 017aaa635 4.5 VDS VGS (V) ID 3.0 VGS(pl) VGS(th) VGS 1.5 QGS1 QGS2 QGS QGD QG(tot) 017aaa137 0 0 2 4 QG (nC) 6 Fig. 15. Gate charge waveform definitions ID = 4.3 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 017aaa636 1.8 IS (A) 1.2 Tj = 150 °C 0.6 0 0 0.2 0.4 Tj = 25 °C 0.6 0.8 1.0 VDS (V) VGS = 0 V Fig. 16. Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 0.51 0.61 0.2 0.3 1.9 2.1 1.0 1.2 0.2 0.3 3 4 2 5 1 6 Dimensions in mm 1.1 1.3 1.9 2.1 0.25 0.35 0.65 12-04-30 Fig. 18. DFN2020MD-6 (SOT1220) PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 10. Soldering Footprint information for reflow soldering of DFN2020MD-6 package 0.33 (6×) SOT1220 0.76 0.43 (6×) 0.66 0.53 (6×) 0.56 0.25 0.35 0.45 0.775 0.65 2.06 0.285 1.25 1.35 0.35 (6×) 1.05 0.25 (6×) 0.65 0.45 (6×) 0.9 1.1 1.2 0.935 0.935 2.5 solder land solder land plus solder paste solder paste deposit solder resist occupied area Dimensions in mm sot1220_fr Fig. 19. Reflow soldering footprint for SOT1220 (DFN2020MD-6) PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PMPB33XN NXP Semiconductors 30 V single N-channel Trench MOSFET 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes PMPB33XN v.1 20120706 Product data sheet - - PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................2 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Test information ..................................................... 9 9 Package outline ..................................................... 9 10 Soldering .............................................................. 10 11 Revision history ................................................... 11 12 12.1 12.2 12.3 12.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 6 July 2012 PMPB33XN Product data sheet All information provided in this document is subject to legal disclaimers. 6 July 2012 © NXP B.V. 2012. All rights reserved 14 / 14