PSMN2R0-60PS N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 4 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits • High efficiency due to low switching and conduction losses • Suitable for standard level gate drive sources 1.3 Applications • DC-to-DC converters • Load switching • Motor control • Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 60 V ID drain current Tmb = 25 °C; VGS = 10 V; Fig. 1 - - 120 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - - 338 W Tj junction temperature -55 - 175 °C - 1.8 2.2 mΩ - 3 3.5 mΩ [1] Static characteristics RDSon drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; [2] Fig. 12 VGS = 10 V; ID = 25 A; Tj = 100 °C; Fig. 12; Fig. 13 Dynamic characteristics QGD QG(tot) gate-drain charge VGS = 10 V; ID = 75 A; VDS = 30 V; - 32 45 nC total gate charge Fig. 14; Fig. 15 - 137 192 nC Scan or click this QR code to view the latest information for this product PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - - 913 mJ Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy [1] [2] Vsup ≤ 60 V; RGS = 50 Ω; Unclamped Continuous current limited by package Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 G gate 2 D drain 3 S source mb D mounting base; connected to drain Graphic symbol D mb G mbb076 S 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number PSMN2R0-60PS Package Name Description Version TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 4. Marking Table 4. Marking codes Type number Marking code PSMN2R0-60PS PSMN2R0-60PS PSMN2R0-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 2 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 60 V VDGR drain-gate voltage Tj ≥ 25 °C; Tj ≤ 175 °C; RGS = 20 kΩ - 60 V VGS gate-source voltage -20 20 V ID drain current VGS = 10 V; Tmb = 100 °C; Fig. 1 [1] - 120 A VGS = 10 V; Tmb = 25 °C; Fig. 1 [1] - 120 A IDM peak drain current pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 3 - 1135 A Ptot total power dissipation Tmb = 25 °C; Fig. 2 - 338 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Tsld(M) peak soldering temperature - 260 °C - 120 A Source-drain diode IS source current Tmb = 25 °C ISM peak source current pulsed; tp ≤ 10 µs; Tmb = 25 °C - 1135 A VGS = 10 V; Tj(init) = 25 °C; ID = 120 A; - 913 mJ [1] Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy [1] PSMN2R0-60PS Product data sheet Vsup ≤ 60 V; RGS = 50 Ω; Unclamped Continuous current limited by package All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 3 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 003aaf754 300 ID (A) 03aa16 120 Pder (%) 240 80 180 120 (1) 40 60 0 Fig. 1. 0 50 100 150 Tmb (° C) 0 200 Continuous drain current as a function of mounting base temperature. Fig. 2. 0 50 100 150 Tmb (°C) 200 Normalized total power dissipation as a function of mounting base temperature 003aaf753 104 ID (A) 103 Limit R DSon = VDS / ID tp =10 µ s 102 100 µ s 10 1 ms 10 ms 100 ms 1 DC 10-1 10-1 Fig. 3. 1 10 102 V DS (V) Safe operating area; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-mb) thermal resistance from junction to mounting base Fig. 4 - 0.22 0.44 K/W PSMN2R0-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 4 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient Vertical in free air - 60 - K/W 003aaf752 1 Zth (j-mb) (K/W) δ = 0.5 10-1 0.2 0.1 0.05 10-2 P 0.02 single shot 10 δ= tp -3 10-6 Fig. 4. 10-5 10-4 10-3 10-2 10-1 tp T t T 1 tp (s) Transient thermal impedance from junction to mounting base as a function of pulse duration 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = -55 °C 54 - - V ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V gate-source threshold voltage ID = 1 mA; VDS = VGS; Tj = 175 °C; 1 - - V 2 3 4 V - - 4.6 V VDS = 60 V; VGS = 0 V; Tj = 25 °C - 0.03 10 µA VDS = 60 V; VGS = 0 V; Tj = 175 °C - - 500 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 100 nA - 1.8 2.2 mΩ - 4.3 5.1 mΩ Static characteristics V(BR)DSS VGS(th) Fig. 10 ID = 1 mA; VDS = VGS; Tj = 25 °C; Fig. 11; Fig. 10 ID = 1 mA; VDS = VGS; Tj = -55 °C; Fig. 10 IDSS IGSS RDSon drain leakage current gate leakage current drain-source on-state resistance VGS = 10 V; ID = 25 A; Tj = 25 °C; [1] Fig. 12 VGS = 10 V; ID = 25 A; Tj = 175 °C; Fig. 12; Fig. 13 PSMN2R0-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 5 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 Symbol Parameter Conditions Min Typ Max Unit VGS = 10 V; ID = 25 A; Tj = 100 °C; - 3 3.5 mΩ f = 1 MHz 0.45 0.9 1.8 Ω ID = 75 A; VDS = 30 V; VGS = 10 V; - 137 192 nC - 129 181 nC Fig. 12; Fig. 13 RG gate resistance Dynamic characteristics QG(tot) total gate charge Fig. 14; Fig. 15 ID = 0 A; VDS = 0 V; VGS = 10 V; Fig. 14; Fig. 15 QGS gate-source charge ID = 75 A; VDS = 30 V; VGS = 10 V - 48 68 nC QGS(th) pre-threshold gatesource charge ID = 75 A; VDS = 30 V; VGS = 10 V; - 29 - nC Fig. 14; Fig. 15 QGS(th-pl) post-threshold gatesource charge - 19 - nC QGD gate-drain charge - 32 45 nC VGS(pl) gate-source plateau voltage VDS = 30 V; Fig. 14; Fig. 15 - 5.7 - V Ciss input capacitance VDS = 30 V; VGS = 0 V; f = 1 MHz; - 9997 13500 pF Coss output capacitance Tj = 25 °C; Fig. 16 - 1210 1640 pF Crss reverse transfer capacitance - 594 835 pF td(on) turn-on delay time VDS = 30 V; RL = 0.4 Ω; VGS = 10 V; - 42 63 ns tr rise time RG(ext) = 4.7 Ω; ID = 75 A - 56 84 ns td(off) turn-off delay time - 115 173 ns tf fall time - 49 74 ns Source-drain diode VSD source-drain voltage IS = 25 A; VGS = 0 V; Tj = 25 °C; Fig. 17 - 0.8 1.2 V trr reverse recovery time IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; - 57 75 ns - 80 104 nC VDS = 30 V Qr recovered charge IS = 25 A; dIS/dt = -100 A/µs; VGS = 0 V; VDS = 30 V [1] PSMN2R0-60PS Product data sheet Measured 3 mm from package. All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 6 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 003aaf742 250 003aaf743 80 gfs (S) ID (A) 200 60 150 40 100 20 50 Tj = 175 °C 0 Fig. 5. 0 30 60 90 ID (A) 0 120 Forward transconductance as a function of drain current; typical values 003aaf744 12 RDSon (mΩ ) 10 Fig. 6. 0 2 Tj = 25 ° C 4 6 VGS (V) Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aaf746 105 C (pF) Ciss 104 8 Crss 6 103 4 2 0 Fig. 7. 0 5 10 15 VGS (V) 102 10-1 20 Drain-source on-state resistance as a function of gate-source voltage; typical values PSMN2R0-60PS Product data sheet Fig. 8. 10 VGS (V) 102 Input and reverse transfer capacitances as a function of gate-source voltage, typical values All information provided in this document is subject to legal disclaimers. 4 October 2012 1 © NXP B.V. 2012. All rights reserved 7 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 003aad674 200 ID (A) 8 6 10 5 150 003aad280 5 VGS(th) (V) 4 max 4.5 3 typ 100 2 50 0 Fig. 9. VGS (V) = 4 0 0.5 1 1.5 VDS (V) min 1 0 - 60 2 0 60 120 Tj (°C) 180 Output characteristics: drain current as a Fig. 10. Gate-source threshold voltage as a function of function of drain-source voltage; typical values junction temperature 03aa35 10- 1 ID (A) min 10- 2 typ 003aaf751 10 R DSon (mΩ) max 8 10- 3 6 10- 4 4 10- 5 2 4.8 VGS (V) = 4.5 5.0 5.5 6.0 10.0 20.0 10- 6 0 2 4 VGS (V) 0 6 Fig. 11. Sub-threshold drain current as a function of gate-source voltage PSMN2R0-60PS Product data sheet 0 50 100 ID (A) 150 Fig. 12. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 8 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 003aaf747 2.4 VDS a 2 ID 1.6 VGS(pl) VGS(th) 1.2 VGS 0.8 QGS1 QGS2 QGS 0.4 QGD QG(tot) 003aaa508 0 -60 0 60 120 Tj (°C) Fig. 14. Gate charge waveform definitions 180 Fig. 13. Drain-source on-state resistance as a function of gate-source voltage; typical values 003aaf748 10 VGS (V) C (pF) 48V 8 003aaf749 105 30V 104 Ciss 103 Coss VDS = 12V 6 Crss 4 102 2 0 0 40 80 120 QG (nC) Fig. 15. Gate-source voltage as a function of gate charge; typical values PSMN2R0-60PS Product data sheet 10 10-1 160 1 10 2 VDS (V) 10 Fig. 16. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 9 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 003aaf750 200 IS (A) 160 120 80 40 0 Tj = 175 ° C 0 0.3 Tj = 25 °C 0.6 0.9 V SD (V) 1.2 Fig. 17. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values PSMN2R0-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 10 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 8. Package outline Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78 E A A1 p q mounting base D1 D L1(1) L2(1) Q L b1(2) (3×) b2(2) (2×) 1 2 3 b(3×) e c e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 b b1(2) b2(2) c D D1 E e L L1(1) L2(1) max. p q Q mm 4.7 4.1 1.40 1.25 0.9 0.6 1.6 1.0 1.3 1.0 0.7 0.4 16.0 15.2 6.6 5.9 10.3 9.7 2.54 15.0 12.8 3.30 2.79 3.0 3.8 3.5 3.0 2.7 2.6 2.2 Notes 1. Lead shoulder designs may vary. 2. Dimension includes excess dambar. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC JEITA 3-lead TO-220AB SC-46 EUROPEAN PROJECTION ISSUE DATE 08-04-23 08-06-13 Fig. 18. Package outline TO-220AB (SOT78) PSMN2R0-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 11 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 9. Legal information 9.1 Data sheet status Notwithstanding any damages that customer might incur for any reason whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards customer for the products described herein shall be limited in accordance with the Terms and conditions of commercial sale of NXP Semiconductors. Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Please consult the most recently issued document before initiating or completing a design. The term 'short data sheet' is explained in section "Definitions". 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PSMN2R0-60PS Product data sheet Suitability for use — NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in life support, life-critical or safety-critical systems or equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors and its suppliers accept no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Applications — Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Customers are responsible for the design and operation of their applications and products using NXP Semiconductors products, and NXP Semiconductors accepts no liability for any assistance with applications or customer product design. It is customer’s sole responsibility to determine whether the NXP Semiconductors product is suitable and fit for the customer’s applications and products planned, as well as for the planned application and use of customer’s third party customer(s). Customers should provide appropriate design and operating safeguards to minimize the risks associated with their applications and products. NXP Semiconductors does not accept any liability related to any default, damage, costs or problem which is based on any weakness or default in the customer’s applications or products, or the application or use by customer’s third party customer(s). Customer is responsible for doing all necessary testing for the customer’s applications and products using NXP Semiconductors products in order to avoid a default of the applications and the products or of the application or use by customer’s third party customer(s). NXP does not accept any liability in this respect. Limiting values — Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) will cause permanent damage to the device. Limiting values are stress ratings only and (proper) operation of the device at these or any other conditions above those given in the Recommended operating conditions section (if present) or the Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer. No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 12 / 14 PSMN2R0-60PS NXP Semiconductors N-channel 60 V 2.2 mΩ standard level MOSFET in TO-220 grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from competent authorities. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications. 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Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ............................................... 2 3 Ordering information ............................................. 2 4 Marking ................................................................... 2 5 Limiting values .......................................................3 6 Thermal characteristics .........................................4 7 Characteristics ....................................................... 5 8 Package outline ................................................... 11 9 9.1 9.2 9.3 9.4 Legal information .................................................12 Data sheet status ............................................... 12 Definitions ...........................................................12 Disclaimers .........................................................12 Trademarks ........................................................ 13 © NXP B.V. 2012. All rights reserved For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: [email protected] Date of release: 4 October 2012 PSMN2R0-60PS Product data sheet All information provided in this document is subject to legal disclaimers. 4 October 2012 © NXP B.V. 2012. All rights reserved 14 / 14