Data Sheet

LF
PA
K
33
PSMN011-60MS
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
4 June 2013
Product data sheet
1. General description
Standard level enhancement mode N-channel MOSFET in LFPAK33 package. This
product is designed and qualified for use in a wide range of industrial, communications
and domestic equipment.
2. Features and benefits
•
•
•
•
High efficiency due to low switching and conduction losses
Suitable for standard level gate drive sources
LFPAK33 package is footprint compatible with other 3.3mm types
Qualified to 175 °C
3. Applications
•
•
•
AC-to-DC converters
Synchronous rectification
DC-DC converters
4. Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
-
60
V
ID
drain current
Tmb = 25 °C; VGS = 10 V; Fig. 1
-
-
61
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
-
91
W
Tj
junction temperature
-55
-
175
°C
-
9.6
11.3
mΩ
-
5.8
-
nC
Static characteristics
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 15 A; Tj = 25 °C;
Fig. 12
Dynamic characteristics
QGD
gate-drain charge
VGS = 10 V; ID = 15 A; VDS = 30 V;
Tj = 25 °C; Fig. 14; Fig. 15
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
5. Pinning information
Table 2.
Pinning information
Pin
Symbol Description
Simplified outline
1
S
source
2
S
source
3
S
source
4
G
gate
mb
D
mounting base; connected to
drain
Graphic symbol
D
G
S
mbb076
1
2
3
4
LFPAK33 (SOT1210)
6. Ordering information
Table 3.
Ordering information
Type number
Package
PSMN011-60MS
Name
Description
Version
LFPAK33
Plastic single ended surface mounted package (LFPAK33); 4
leads
SOT1210
7. Marking
Table 4.
Marking codes
Type number
Marking code
PSMN011-60MS
M11S60
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage
Tj = 25 °C
-
60
V
VGS
gate-source voltage
-20
20
V
ID
drain current
VGS = 10 V; Tmb = 25 °C; Fig. 1
-
61
A
VGS = 10 V; Tmb = 100 °C; Fig. 1
-
43
A
IDM
peak drain current
pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig. 4
-
244
A
Ptot
total power dissipation
Tmb = 25 °C; Fig. 2
-
91
W
Tstg
storage temperature
-55
175
°C
Tj
junction temperature
-55
175
°C
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Tsld(M)
peak soldering temperature
Min
Max
Unit
-
260
°C
-
70
A
Source-drain diode
IS
source current
Tmb = 25 °C
ISM
peak source current
pulsed; tp ≤ 10 µs; Tmb = 25 °C
-
244
A
VGS = 10 V; Tj(init) = 25 °C; ID = 61 A;
-
48.1
mJ
[1]
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source
avalanche energy
Vsup ≤ 60 V; RGS = 50 Ω; unclamped;
Fig. 3
[1]
ID
(A)
Continuous current is limited by package
003aal110
80
03na19
120
Pder
(%)
64
80
48
32
40
16
0
Fig. 1.
0
30
60
90
120
150
Tj (°C)
Continuous drain current as a function of
mounting base temperature
PSMN011-60MS
Product data sheet
0
180
Fig. 2.
0
100
150
Tmb (°C)
200
Normalized total power dissipation as a
function of mounting base temperature
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
IAL
(A)
003aal111
102
10
(1)
1
10-1
10-3
Fig. 3.
(2)
10-2
10-1
1
tAL (ms)
10
Single pulse avalanche rating; avalanche current as a function of avalanche time
ID
(A)
003aal112
103
Limit RDSon = VDS / ID
102
tp = 10 us
100 us
10
DC
1
10-1
Fig. 4.
1
1 ms
10 ms
100 ms
10
VDS (V)
102
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
9. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-mb)
thermal resistance
from junction to
mounting base
Fig. 5
-
1.44
1.65
K/W
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
003aak900
10
Zth(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
10-1
P
0.05
δ=
tp
T
0.02
single shot
10-2
10-6
Fig. 5.
10-5
tp
10-4
10-3
10-2
10-1
t
T
tp (s)
1
Transient thermal impedance from junction to mounting base as a function of pulse duration
10. Characteristics
Table 7.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
ID = 250 µA; VGS = 0 V; Tj = -55 °C
54
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 175 °C;
1
-
-
V
gate-source threshold
voltage
ID = 1 mA; VDS = VGS; Tj = 25 °C;
2.3
3
4
V
-
-
4.6
V
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
0.054
1
µA
VDS = 60 V; VGS = 0 V; Tj = 175 °C
-
-
500
µA
VGS = 20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
100
nA
VGS = 10 V; ID = 15 A; Tj = 25 °C;
-
9.6
11.3
mΩ
-
-
24.4
mΩ
f = 1 MHz
-
2.75
-
Ω
ID = 15 A; VDS = 30 V; VGS = 10 V;
-
23
-
nC
Static characteristics
V(BR)DSS
VGS(th)
VGSth
Fig. 10
Fig. 10; Fig. 11
ID = 1 mA; VDS = VGS; Tj = -55 °C;
Fig. 10
IDSS
IGSS
RDSon
drain leakage current
gate leakage current
drain-source on-state
resistance
Fig. 12
VGS = 10 V; ID = 15 A; Tj = 175 °C;
Fig. 13
RG
gate resistance
Dynamic characteristics
QG(tot)
total gate charge
Tj = 25 °C; Fig. 14; Fig. 15
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
QGS
gate-source charge
ID = 15 A; VDS = 30 V; VGS = 10 V;
-
6.1
-
nC
QGS(th)
pre-threshold gatesource charge
Tj = 25 °C; Fig. 14; Fig. 15
-
3.9
-
nC
QGS(th-pl)
post-threshold gatesource charge
-
2.2
-
nC
QGD
gate-drain charge
-
5.8
-
nC
Ciss
input capacitance
VDS = 30 V; VGS = 0 V; f = 1 MHz;
-
1368
-
pF
Coss
output capacitance
Tj = 25 °C; Fig. 16
-
191
-
pF
Crss
reverse transfer
capacitance
-
108
-
pF
td(on)
turn-on delay time
VDS = 30 V; RL = 2 Ω; VGS = 10 V;
-
6.7
-
ns
tr
rise time
RG(ext) = 5 Ω; Tj = 25 °C
-
8.46
-
ns
td(off)
turn-off delay time
-
16.9
-
ns
tf
fall time
-
9.18
-
ns
Source-drain diode
VSD
source-drain voltage
IS = 15 A; VGS = 0 V; Tj = 25 °C; Fig. 17
-
0.84
1.2
V
trr
reverse recovery time
IS = 15 A; dIS/dt = -100 A/µs; VGS = 0 V;
-
21.7
-
ns
recovered charge
VDS = 30 V; Tj = 25 °C
-
19.2
-
nC
Qr
gfs
(S)
003aal116
80
003aal115
30
RDSon
25
64
20
48
15
32
10
16
0
Fig. 6.
5
0
16
32
48
64
ID (A)
Forward transconductance as a function of
drain current; typical values
PSMN011-60MS
Product data sheet
0
80
Fig. 7.
0
2
6
8
10
12
14
VGS (V)
16
Drain-source on-state resistance as a function
of gate-source voltage; typical values
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
ID
(A)
003aal114
64
10 V
8V 6V
ID
(A)
VGS = 5.5 V
48
003aal117
64
48
5V
32
32
4.5 V
16
16
175°C
Tj = 25°C
4V
0
0
0.75
1.5
2.25
VDS (V)
0
3
Tj = 25 °C; tp = 300 μs
Fig. 8.
Fig. 9.
Output characteristics; drain current as a
function of drain-source voltage; typical values
VGS(th)
(V)
003aal156
5
2
3
4
5
VGS (V)
6
Transfer characteristics; drain current as a
function of gate-source voltage; typical values
003aal155
10-2
Typ
3
1
10-1
ID
(A)
Max
4
0
10-3
Min
Min
Typ
Typ
Max
Max
Min
2
10-4
1
10-5
0
-60
0
60
120
Tj (°C)
10-6
180
Fig. 10. Gate-source threshold voltage as a function of
junction temperature
PSMN011-60MS
Product data sheet
0
1
2
3
4
VGS (V)
5
Fig. 11. Sub-threshold drain current as a function of
gate-source voltage
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
003aal118
50
RDSon
4.5 V
a
5V
003aal119
2.5
40
2
5.5 V
30
20
1.5
1
6V
8V
10
0
0.5
VGS = 10 V
0
16
32
48
ID (A)
0
-60
64
Tj = 25 °C; tp = 300 μs
Fig. 12. Drain-source on-state resistance as a function
of drain current; typical values
-30
0
30
60
90
120 150
Tj (°C)
180
Fig. 13. Normalized drain-source on-state resistance
factor as a function of junction temperature
VDS
VGS
(V)
ID
003aal120
10
8
VDS
GS = 12 V
30 V
VGS(pl)
6
48 V
VGS(th)
VGS
4
QGS1
QGS2
QGS
QGD
QG(tot)
2
003aaa508
0
Fig. 14. Gate charge waveform definitions
0
5
10
15
20
QG (nC)
25
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
003aal121
104
C
(pF)
IS
(A)
48
Ciss
103
003aal122
64
32
Coss
Crss
102
16
175°C
10
10-1
1
10
VDS (V)
0
102
0
0.2
0.4
Tj = 25°C
0.6
0.8
1
VSD (V)
1.2
Fig. 16. Input, output and reverse transfer capacitances Fig. 17. Source current as a function of source-drain
as a function of drain-source voltage; typical
voltage; typical values
values
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
11. Package outline
Plastic single ended surface mounted package (LFPAK33); 8 leads
E
e1
L
SOT1210
A
A
c1
b1
E1
mounting
base
D1
D
H
1
4
e
b
w
X
A
A1
c
C
θ
Lp
y C
detail X
0
2.5
Dimensions
Unit(1)
5 mm
scale
A
A1
b
b1
c
c1
D(1)
D1
E(1)
E1
e
e1
H
L
Lp
w
y
max 0.90 0.10 0.35 0.35 0.20 0.30 2.70 2.35 3.40 2.45
3.40 0.25 0.50
nom
0.65 0.65
0.20 0.10
3.20 0.13 0.30
min 0.80 0.00 0.25 0.25 0.10 0.20 2.50 1.90 3.20 2.00
mm
Note
1. Plastic or metal protrusions of 0.15 mm per side are not included.
Outline
version
JEDEC
8°
0°
sot1210_po
References
IEC
θ
JEITA
European
projection
Issue date
11-12-19
12-03-12
SOT1210
Fig. 18. Package outline LFPAK33 (SOT1210)
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
12. Legal information
12.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
status [1][2]
Product
status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification
This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1]
[2]
[3]
Definition
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Please consult the most recently issued document before initiating or
completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
12.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
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customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
PSMN011-60MS
Product data sheet
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using NXP Semiconductors products, and NXP
Semiconductors accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the NXP Semiconductors product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
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products are sold subject to the general terms and conditions of commercial
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purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
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the product is not suitable for automotive use. It is neither qualified nor
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NXP Semiconductors accepts no liability for inclusion and/or use of nonautomotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
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customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
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liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
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between the translated and English versions.
12.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PSMN011-60MS
Product data sheet
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PSMN011-60MS
NXP Semiconductors
N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33
13. Contents
1
General description ............................................... 1
2
Features and benefits ............................................1
3
Applications ........................................................... 1
4
Quick reference data ............................................. 1
5
Pinning information ............................................... 2
6
Ordering information ............................................. 2
7
Marking ................................................................... 2
8
Limiting values .......................................................2
9
Thermal characteristics .........................................4
10
Characteristics ....................................................... 5
11
Package outline ................................................... 10
12
12.1
12.2
12.3
12.4
Legal information .................................................11
Data sheet status ............................................... 11
Definitions ...........................................................11
Disclaimers .........................................................11
Trademarks ........................................................ 12
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 4 June 2013
PSMN011-60MS
Product data sheet
All information provided in this document is subject to legal disclaimers.
4 June 2013
© NXP B.V. 2013. All rights reserved
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