Si7403DN New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) FEATURES rDS(on) (W) ID (A) 0.1 @ VGS = –4.5 V –4.5 0.135 @ VGS = –2.5 V –3.8 D TrenchFETr Power MOSFETS: 2.5-V Rated D New PowerPAKt Package – Low Thermal Resistance, RthJC – Low 1.07-mm Profile –20 APPLICATIONS D Load Switching D PA Switching S S S PowerPAKt 1212-8 S 3.30 mm 3.30 mm 1 S 2 S 3 G G 4 D 8 P-Channel MOSFET D 7 D 6 D 5 Bottom View D D D D ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 10 secs Steady State Drain-Source Voltage VDS –20 Gate-Source Voltage VGS "8 Continuous Drain Current (TJ = 150_C) _ a TA = 25_C V –4.5 –2.9 –3.2 –2.1 ID TA = 85_C Pulsed Drain Current IDM continuous Source Current (Diode Conduction)a IS TA = 25_C Maximum Power Dissipationa Unit TA = 85_C Operating Junction and Storage Temperature Range PD A –20 –3.0 –1.3 3.5 1.5 1.9 0.8 TJ, Tstg W _C –55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case Steady State Steady State RthJA RthJC Typical Maximum 28 35 65 81 4.5 5.6 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71431 S-03390—Rev. A, 02-Apr-01 www.vishay.com 1 Si7403DN New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min VGS(th) VDS = VGS, ID = –250 mA –0.45 Typ Max Unit Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Drain-Source On-State Resistancea "100 VDS = –20 V, VGS = 0 V –1 VDS = –20 V, VGS = 0 V, TJ = 70_C –5 VDS = –5 V, VGS = –4.5 V –10 VDS = –5 V, VGS = –2.5 V –4 nA m mA A VGS = –4.5 V, ID = –3.3 A 0.078 0.1 VGS = –2.5 V, ID = –2.9 A 0.110 0.135 gfs VDS = –10 V, ID = –3.3 A 8.8 VSD IS = –1.6 A, VGS = 0 V 0.8 –1.2 8.6 14 Forward Transconductancea Diode Forward VDS = 0 V, VGS = "4.5 V rDS(on) Voltagea V W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd 3.1 Turn-On Delay Time td(on) 27 50 tr 17 30 52 80 45 70 50 80 Rise Time Turn-Off Delay Time VDS = –10 V, VGS = –4.5 V, ID = –4.5 A VDD = –10 V, RL = 10 W ID ^ –1.6 A, VGEN = –4.5 V, RG = 6 W td(off) Fall Time tf Source-Drain Reverse Recovery Time trr 1.5 IF = –1.6 A, di/dt = 100 A/ms nC ns Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 4.5, 4, 3.5 V TC = –55_C 16 16 3V I D – Drain Current (A) I D – Drain Current (A) 125_C 12 2.5 V 8 2V 4 12 25_C 8 4 1.5 V 0 0 0 1 2 3 4 VDS – Drain-to-Source Voltage (V) www.vishay.com 2 5 0 1 2 3 4 VGS – Gate-to-Source Voltage (V) Document Number: 71431 S-03390—Rev. A, 02-Apr-01 Si7403DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Capacitance On-Resistance vs. Drain Current 1400 0.30 C – Capacitance (pF) r DS(on)– On-Resistance ( W ) 1200 0.24 0.18 VGS = 2.5 V 0.12 VGS = 4.5 V 1000 800 600 Ciss 400 Coss 0.06 200 Crss 0.00 0 0 4 8 12 16 20 0 4 Gate Charge V GS – Gate-to-Source Voltage (V) r DS(on)– On-Resistance ( W ) (Normalized) 3 2 1 0 4 6 8 1.4 1.2 1.0 0.8 0.6 –50 10 Qg – Total Gate Charge (nC) –25 0 25 50 75 100 125 150 TJ – Junction Temperature (_C) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.30 r DS(on)– On-Resistance ( W ) 20 I S – Source Current (A) 20 VGS = 4.5 V ID = 3.3 A 1.6 4 2 16 On-Resistance vs. Junction Temperature 1.8 VDS = 10 V ID = 3.3 A 0 12 VDS – Drain-to-Source Voltage (V) ID – Drain Current (A) 5 8 10 TJ = 150_C TJ = 25_C 0.24 0.18 ID = 3.3 A 0.12 0.06 0.00 1 0 0.25 0.50 0.75 1.00 1.25 VSD – Source-to-Drain Voltage (V) Document Number: 71431 S-03390—Rev. A, 02-Apr-01 1.50 0 2 4 6 8 VGS – Gate-to-Source Voltage (V) www.vishay.com 3 Si7403DN New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage Single Pulse Power, Juncion-To-Ambient 0.4 50 40 0.2 Power (W) V GS(th) Variance (V) 0.3 ID = 250 mA 0.1 30 20 0.0 10 –0.1 –0.2 –50 0 –25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600 Time (sec) TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = 0.02 t1 t2 2. Per Unit Base = RthJA = 68_C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 Single Pulse 0.05 0.02 0.01 10–4 www.vishay.com 4 10–3 10–2 Square Wave Pulse Duration (sec) 10–1 1 Document Number: 71431 S-03390—Rev. A, 02-Apr-01 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1