BUZ 103 S SPP31N05 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS(on) Package Ordering Code BUZ 103 S 55 V 31 A 0.04 Ω TO-220 AB Q67040-S4009-A2 Maximum Ratings Parameter Symbol Continuous drain current ID Values A TC = 25 °C 31 TC = 100 °C 22 Pulsed drain current Unit IDpuls 124 TC = 25 °C Avalanche energy, single pulse mJ E AS ID = 31 A, V DD = 25 V, RGS = 25 Ω L = 291 µH, Tj = 25 °C 140 Avalanche current,limited by Tjmax IAR 31 A Avalanche energy,periodic limited by Tjmax E AR 7.5 mJ Reverse diode dv/dt dv/dt kV/µs IS = 31 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage V GS Power dissipation P tot TC = 25 °C Semiconductor Group ± 20 V W 75 1 30/Jan/1998 BUZ 103 S SPP31N05 Maximum Ratings Parameter Symbol Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 Thermal resistance, junction - case RthJC ≤2 Thermal resistance, junction - ambient RthJA ≤ 62 Values IEC climatic category, DIN IEC 68-1 Unit °C K/W 55 / 175 / 56 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 2.1 3 4 V GS(th) V GS=V DS, ID = 50 µA Zero gate voltage drain current V V (BR)DSS µA IDSS V DS = 50 V, V GS = 0 V, Tj = -40 °C - - 0.1 V DS = 50 V, V GS = 0 V, Tj = 25 °C - 0.1 1 V DS = 50 V, V GS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current V GS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) V GS = 10 V, ID = 22 A Semiconductor Group nA IGSS - 2 0.03 0.04 30/Jan/1998 BUZ 103 S SPP31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance V DS≥ 2 * ID * RDS(on)max, ID = 22 A Input capacitance 10 pF - 720 900 - 230 300 - 125 160 Crss V GS = 0 V, V DS = 25 V, f = 1 MHz Turn-on delay time - Coss V GS = 0 V, V DS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss V GS = 0 V, V DS = 25 V, f = 1 MHz Output capacitance S gfs ns td(on) V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω Rise time - 10 15 - 25 40 - 25 40 - 20 30 tr V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω Turn-off delay time td(off) V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω Fall time tf V DD = 30 V, VGS = 10 V, ID = 31 A RG = 13 Ω Gate charge at threshold V DD = 40 V, ID = 0.1 A, V GS =0 to 1 V Gate charge at 7.0 V 1 - 20 30 - 25 40 V V (plateau) V DD = 40 V, ID = 31 A Semiconductor Group 0.7 Qg(total) V DD = 40 V, ID = 31 A, VGS =0 to 10 V Gate plateau voltage Qg(7) V DD = 40 V, ID = 31 A, VGS =0 to 7 V Gate charge total nC Qg(th) 3 5.9 30/Jan/1998 BUZ 103 S SPP31N05 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed - - 124 V 1.2 1.8 ns trr - 55 85 µC Qrr - V R = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 31 - V R = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - V SD V GS = 0 V, IF = 62 A Reverse recovery time ISM TC = 25 °C Inverse diode forward voltage A IS 4 0.1 0.15 30/Jan/1998 BUZ 103 S SPP31N05 Power dissipation Ptot = ƒ(TC) Ptot Drain current ID = ƒ(TC) parameter: VGS ≥ 10 V 80 32 W A ID 60 24 50 20 40 16 30 12 20 8 10 4 0 0 0 20 40 60 80 100 120 140 °C 180 0 20 40 60 80 100 120 140 TC °C 180 TC Safe operating area ID = ƒ(VDS) parameter: D = 0, TC = 25°C Transient thermal impedance Zth JC = ƒ(tp) parameter: D = tp / T 10 1 10 3 K/W A ID ZthJC 10 0 t = 13.0µs p DS /I D 10 2 R DS (o n) = V 10 -1 D = 0.50 100 µs 10 10 -2 0.20 1 0.10 0.05 1 ms 0.02 10 -3 10 0 0 10 DC 10 1 V 10 10 -4 -7 10 2 VDS Semiconductor Group 0.01 single pulse 10 ms 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 5 30/Jan/1998 BUZ 103 S SPP31N05 Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 70 Ptot = 75W A Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C 0.13 l k Ω j 60 ID i 55 b 5.0 d 5.5 e 6.0 f 6.5 g 7.0 f h 7.5 h 40 g 35 30 25 i 8.0 j 9.0 k 10.0 d l 20.0 e 20 15 c d e f g RDS (on) 0.10 4.5 c 45 b 0.11 VGS [V] a 4.0 50 a 0.09 0.08 0.07 0.06 0.05 h 0.04 i 0.03 j 10 0.02 c 5 0 0.01 b 1.0 2.0 3.0 a 4.0 4.5 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h j i 9.0 10.0 20.0 0.00 a 0.0 VGS [V] = 4.0 V 5.5 VDS 0 10 20 30 40 50 A 65 ID Typ. transfer characteristics ID = f (V GS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 70 A I D 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 V 10 VGS Semiconductor Group 6 30/Jan/1998 BUZ 103 S SPP31N05 Gate threshold voltage Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 22 A, VGS = 10 V V GS(th)= f (Tj) parameter:VGS=VDS, ID =50µA 0.13 5.0 Ω V 4.4 0.11 RDS (on) 0.10 VGS(th) 4.0 0.09 3.6 0.08 3.2 0.07 2.8 0.06 2.4 98% max 2.0 0.05 typ 0.04 1.6 0.03 1.2 0.02 0.8 0.01 0.4 typ 0.00 -60 min 0.0 -20 20 60 100 °C 180 -60 -20 20 60 100 140 V 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj , tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF 10 2 10 3 Ciss 10 1 Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Coss Tj = 175 °C (98%) 10 2 0 Crss 5 10 15 20 25 30 V 40 VDS Semiconductor Group 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 30/Jan/1998 BUZ 103 S SPP31N05 Avalanche energy EAS = ƒ(Tj) parameter: ID = 31 A, VDD = 25 V RGS = 25 Ω, L = 291 µH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 31 A 16 150 mJ V 130 EAS 120 VGS 110 12 100 10 90 0,2 VDS max 80 0,8 VDS max 8 70 60 6 50 40 4 30 20 2 10 0 20 0 40 60 80 100 120 140 °C 180 Tj 0 4 8 12 16 20 24 28 32 nC 38 Q Gate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 30/Jan/1998