BUZ 104SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 104SL-4 55 V 3.2 A 0.125 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Continuous drain current one channel active ID TA = 25 °C Values Unit A 3.2 Pulsed drain current one channel active IDpuls TA = 25 °C 12.8 EAS Avalanche energy, single pulse mJ ID = 3.2 A, VDD = 25 V, RGS = 25 Ω L = 10.15 mH, Tj = 25 °C 52 Reverse diode dv/dt dv/dt kV/µs IS = 3.2 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation ,one channel active Ptot TA = 25 °C ± 14 V W 2.4 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 175 / 56 1 07/Oct/1997 BUZ 104SL-4 Preliminary data Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - - tbd Thermal resistance, junction - ambient 2) RthJA - - 62.5 K/W 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 1.2 1.6 2 VGS(th) VGS=VDS, ID = 20 µA Zero gate voltage drain current V IDSS µA VDS = 55 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 55 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 55 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 3.2 A Semiconductor Group nA - 2 0.095 0.125 07/Oct/1997 BUZ 104SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 3.2 A Input capacitance 3 pF - 320 400 - 100 125 - 55 70 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance - Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Ω Rise time - 20 30 - 30 45 - 35 53 - 20 30 tr VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 3.2 A RG = 16.8 Ω Gate charge at threshold Qg(th) VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V 0.85 - 5.3 8 - 14 21 V(plateau) VDD = 40 V, ID = 3.2 A Semiconductor Group 0.55 Qg(total) VDD = 40 V, ID = 3.2 A, VGS =0 to 10 V Gate plateau voltage - Qg(5) VDD = 40 V, ID = 3.2 A, VGS =0 to 5 V Gate charge total nC V - 3 3.27 07/Oct/1997 BUZ 104SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current, pulsed - - 12.8 V 0.95 1.6 trr ns - 50 75 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 3.2 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 6.4 A Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A nC - 4 90 135 07/Oct/1997 BUZ 104SL-4 Preliminary data Power dissipation Ptot = ƒ(T) 2.6 Drain current ID = ƒ(TC) parameter: VGS ≥ 5 V 3.4 RthJA thJC W A 2.2 Ptot ID 2.0 2.8 2.4 1.8 1.6 2.0 1.4 1.6 1.2 1.0 1.2 0.8 0.8 0.6 0.4 0.4 0.2 0.0 0.0 0 20 40 Semiconductor Group 60 80 100 120 140 °C T 180 0 20 40 60 80 100 120 140 °C 180 TC 5 07/Oct/1997 BUZ 104SL-4 Preliminary data Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs 7.5 A 6.5 ID 0.38 Ptot = 2W a Ω l jig khf e d 0.32 RDS (on) VGS [V] a 2.5 6.0 b 3.0 c 3.5 d 4.0 4.5 e 4.5 4.0 f 5.0 g 5.5 5.5 5.0 c 3.5 h 6.0 3.0 i 6.5 2.5 j 7.0 2.0 b k 8.0 l 10.0 0.28 0.24 0.20 0.16 c 0.12 1.0 0.04 V d e f g ki hj 0.08 1.5 0.5 a 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 b VGS [V] = 0.00 0.0 5.0 a 2.5 3.0 b 3.5 1.0 c 4.0 d 4.5 e f 5.0 5.5 2.0 g 6.0 3.0 h i 6.5 7.0 4.0 j 8.0 k 10.0 A 5.5 ID VDS Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 45 A ID 35 30 25 20 15 10 5 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 07/Oct/1997 BUZ 104SL-4 Preliminary data Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 3.2 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 20 µA 0.34 4.6 Ω V 4.0 0.28 RDS (on) VGS(th) 0.24 3.6 3.2 2.8 0.20 2.4 98% 0.16 98% 2.0 typ typ 0.12 1.6 2% 1.2 0.08 0.8 0.04 0.4 0.00 -60 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 3 10 2 A C pF IF Ciss 10 1 10 2 Coss 10 0 Crss Tj = 25 °C typ Tj = 175 °C typ Tj = 25 °C (98%) Tj = 175 °C (98%) 10 1 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 -1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 07/Oct/1997 BUZ 104SL-4 Preliminary data Avalanche energy EAS = f (Tj) Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 3 A parameter:ID=3.2A,VDD =25 V RGS =25 Ω , L = 10.15mH 16 60 V mJ VGS EAS 40 12 10 8 30 0,2 VDS max 6 0,8 VDS max 20 4 10 0 20 2 40 60 80 100 120 140 °C Tj 0 0 180 2 4 6 8 10 12 14 16 nC 19 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 07/Oct/1997