BUZ 102SL-4 Preliminary data SIPMOS ® Power Transistor • Quad-channel • Enhancement mode • Logic level • Avalanche-rated • dv/dt rated Type VDS ID RDS(on) Package Ordering Code BUZ 102SL-4 55 V 6.2 A 0.033 Ω P-DSO-28 C67078-S. . . .- . . Maximum Ratings Parameter Symbol Continuous drain current one channel active ID TA = 25 °C Values Unit A 6.2 Pulsed drain current one channel active IDpuls TA = 25 °C 24.8 EAS Avalanche energy, single pulse mJ ID = 6.2 A, VDD = 25 V, RGS = 25 Ω L = 12.7 mH, Tj = 25 °C 245 Reverse diode dv/dt dv/dt kV/µs IS = 6.2 A, VDS = 40 V, diF/dt = 200 A/µs Tjmax = 175 °C 6 Gate source voltage VGS Power dissipation ,one channel active Ptot TA = 25 °C ± 14 V W 2.4 Operating temperature Tj -55 ... + 175 Storage temperature Tstg -55 ... + 175 IEC climatic category, DIN IEC 68-1 Semiconductor Group °C 55 / 175 / 56 1 23/Oct/1997 BUZ 102SL-4 Preliminary data Thermal Characteristics Symbol Parameter Values Unit min. typ. max. Thermal resistance, junction - soldering point 1) RthJS - - tbd Thermal resistance, junction - ambient 2) RthJA - - 62.5 K/W 1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer,70µm thick) copper area for Drain connection. PCB is vertical without blown air. 2) one channel active Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage 55 - - 1.2 1.6 2 VGS(th) VGS=VDS, ID = 90 µA Zero gate voltage drain current V IDSS µA VDS = 55 V, VGS = 0 V, Tj = -40 °C - - 0.1 VDS = 55 V, VGS = 0 V, Tj = 25 °C - 0.1 1 VDS = 55 V, VGS = 0 V, Tj = 150 °C - - 100 Gate-source leakage current IGSS VGS = 20 V, VDS = 0 V Drain-Source on-resistance - 10 100 Ω RDS(on) VGS = 5 V, ID = 6.2 A Semiconductor Group nA - 2 0.025 0.033 23/Oct/1997 BUZ 102SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Transconductance gfs VDS≥ 2 * ID * RDS(on)max, ID = 6.2 A Input capacitance 5 pF - 1380 1730 - 410 515 - 230 290 Crss VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time - Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance 11 Ciss VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance S td(on) ns VDD = 30 V, VGS = 5 V, ID = 6.2 A RG = 3.6 Ω Rise time - 25 40 - 37 55 - 75 115 - 37 55 tr VDD = 30 V, VGS = 5 V, ID = 6.2 A RG = 3.6 Ω Turn-off delay time td(off) VDD = 30 V, VGS = 5 V, ID = 6.2 A RG = 3.6 Ω Fall time tf VDD = 30 V, VGS = 5 V, ID = 6.2 A RG = 3.6 Ω Gate charge at threshold Qg(th) VDD = 40 V, ID ≥ 0.1 A, VGS =0 to 1 V Gate charge at 5.0 V 3.75 - 37 55 - 62 93 V(plateau) VDD = 40 V, ID = 6.2 A Semiconductor Group 2.5 Qg(total) VDD = 40 V, ID = 6.2 A, VGS =0 to 10 V Gate plateau voltage - Qg(5) VDD = 40 V, ID = 6.2 A, VGS =0 to 5 V Gate charge total nC V - 3 2.6 23/Oct/1997 BUZ 102SL-4 Preliminary data Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current, pulsed - - 24.8 V 0.9 1.7 trr ns - 70 105 Qrr VR = 30 V, IF=lS, diF/dt = 100 A/µs Semiconductor Group 6.2 - VR = 30 V, IF=lS, diF/dt = 100 A/µs Reverse recovery charge - VSD VGS = 0 V, IF = 12.4 A Reverse recovery time - ISM TA = 25 °C Inverse diode forward voltage A nC - 4 0.15 0.25 23/Oct/1997 BUZ 102SL-4 Preliminary data Power dissipation Ptot = ƒ(TA) Drain current ID = ƒ(TA) parameter: VGS ≥ 5 V 2.8 6.5 W A 2.4 Ptot 5.5 ID 2.2 2.0 5.0 4.5 1.8 4.0 1.6 3.5 1.4 3.0 1.2 2.5 1.0 2.0 0.8 1.5 0.6 0.4 1.0 0.2 0.0 0.5 0.0 0 20 40 60 80 100 120 140 °C 180 TA Semiconductor Group 0 20 40 60 80 100 120 140 °C 180 TA 5 23/Oct/1997 BUZ 102SL-4 Preliminary data Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C 14 A 0.10 lkP tot = 2W ji hgfe d b Ω 12 ID a VGS [V] a 2.5 11 b 3.0 c 3.5 d 4.0 e 4.5 f 5.0 g 5.5 h 6.0 i 6.5 5 j 7.0 4 b k 8.0 l 10.0 c 10 9 8 7 6 RDS (on)0.08 0.07 0.06 0.05 3 0.04 c 0.03 d e f g h 0.02 2 0.01 1 a 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.00 0 5.0 ijk VGS [V] = a 3.0 2.5 b 3.5 2 c 4.0 d 4.5 e f 5.0 5.5 4 6 g 6.0 h i 6.5 7.0 8 j 8.0 A k 10.0 12 ID VDS Typ. transfer characteristics ID = f (VGS) parameter: tp = 80 µs VDS≥2 x ID x RDS(on)max 80 A ID 60 50 40 30 20 10 0 0 1 2 3 Semiconductor Group 4 5 6 7 8 V VGS 10 6 23/Oct/1997 BUZ 102SL-4 Preliminary data Drain-source on-resistance RDS (on) = ƒ(Tj) parameter: ID = 6.2 A, VGS = 5 V Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 90 µA 0.09 4.6 Ω V 4.0 RDS (on)0.07 VGS(th) 3.6 3.2 0.06 2.8 0.05 2.4 98% 98% 0.04 2.0 typ typ 1.6 0.03 2% 1.2 0.02 0.8 0.01 0.00 -60 0.4 -20 20 60 100 °C 0.0 -60 180 -20 20 60 100 °C Tj 180 Tj Typ. capacitances Forward characteristics of reverse diode IF = ƒ(VSD) parameter: Tj, tp = 80 µs C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 10 3 A C IF pF 10 2 Ciss 10 3 10 1 Tj = 25 °C typ Coss Tj = 175 °C typ Tj = 25 °C (98%) Crss Tj = 175 °C (98%) 10 2 0 5 10 Semiconductor Group 15 20 25 30 V 40 VDS 7 10 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 23/Oct/1997 BUZ 102SL-4 Preliminary data Avalanche energy EAS = ƒ(Tj) parameter: ID = 6.2 A, VDD = 25 V RGS = 25 Ω, L = 12.7 mH Typ. gate charge VGS = ƒ(QGate) parameter: ID puls = 6 A 260 16 mJ V 220 EAS VGS 200 12 180 10 160 140 8 120 100 0,2 VDS max 6 0,8 VDS max 80 4 60 40 2 20 0 20 40 60 80 100 120 140 °C 0 0 180 Tj 10 20 30 40 50 60 70 nC 90 QGate Drain-source breakdown voltage V(BR)DSS = ƒ(Tj) 65 V V(BR)DSS 61 59 57 55 53 51 49 -60 -20 20 60 100 °C 180 Tj Semiconductor Group 8 23/Oct/1997