SPP80N03 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS • Drain-Source on-state resistance RDS(on) 0.006 Ω Continuous drain current ID Enhancement mode • Avalanche rated 30 V 80 A • dv/dt rated • 175°C operating temperature Type Package Ordering Code Packaging SPP80N03 P-TO220-3-1 Q67040-S4734-A2 Tube SPB80N03 P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel Pin 1 G Pin 2 Pin 3 D S Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value A TC = 25 °C, 1) 80 TC = 100 °C 80 Pulsed drain current Unit IDpulse 320 EAS 700 Avalanche energy, periodic limited by Tjmax EAR 30 Reverse diode dv/dt dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 300 W -55... +175 °C TC = 25 °C Avalanche energy, single pulse mJ ID = 80 A, VDD = 25 V, RGS = 25 Ω kV/µs IS = 80 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C TC = 25 °C Operating and storage temperature T j , Tstg IEC climatic category; DIN IEC 68-1 Semiconductor Group 55/175/56 1 SPP80N03 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 0.5 Thermal resistance, junction - ambient, leded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area2) - - 40 K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 30 - - Gate threshold voltage, VGS = VDS ID = 240 µA VGS(th) 2.1 3 4 Zero gate voltage drain current I DSS Static Characteristics Drain- source breakdown voltage V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C µA VDS = 30 V, VGS = 0 V, T j = 25 °C VDS = 30 V, VGS = 0 V, T j = 150 °C Gate-source leakage current I GSS 0.1 1 - - 100 - 10 100 nA VGS = 20 V, VDS = 0 V Drain-Source on-state resistance Ω RDS(on) VGS = 10 V, ID = 80 A - 0.0038 0.006 1current limited by bond wire 2 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 SPP80N03 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. g fs 30 93 - S Ciss - 3970 5000 pF Coss - 1920 2500 Crss - 775 1000 t d(on) - 22 33 tr - 25 38 t d(off) - 55 85 tf - 40 60 Dynamic Characteristics Transconductance VDS≥2*ID*RDS(on)max , ID = 80 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Ω Rise time VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Ω Turn-off delay time VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Ω Fall time VDD = 15 V, V GS = 10 V, ID = 80 A, RG = 2.5 Ω Semiconductor Group 3 ns SPP80N03 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Q gs - 20 30 Q gd - 51 76.5 Qg - 112 175 V(plateau) - 4.7 - V IS - - 80 A I SM - - 320 VSD - 1.1 1.7 V t rr - 60 90 ns Q rr - 0.06 0.09 µC Dynamic Characteristics Gate to source charge nC VDD = 24 V, ID = 80 A Gate to drain charge VDD = 24 V, ID = 80 A Gate charge total VDD = 24 V, ID = 80 A, VGS = 0 to 10 V Gate plateau voltage VDD = 24 V, ID = 80 A Reverse Diode Inverse diode continuous forward current TC = 25 °C Inverse diode direct current,pulsed TC = 25 °C Inverse diode forward voltage VGS = 0 V, I F = 160 A Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs Reverse recovery charge VR = 15 V, IF=l S , diF/dt = 100 A/µs Semiconductor Group 4 SPP80N03 Power Dissipation Drain current Ptot = f (TC) ID = f (TC ) parameter: VGS ≥ 10 V SPP80N03 SPP80N03 320 90 W A 70 60 200 ID Ptot 240 50 160 40 120 30 80 20 40 0 0 10 20 40 60 80 0 0 100 120 140 160 °C 190 20 40 60 80 100 120 140 160 °C 190 TC TC Safe operating area Transient thermal impedance I D = f (V DS) ZthJC = f (tp ) parameter : D = 0 , T C = 25 °C parameter : D = tp /T 10 3 SPP80N03 10 1 SPP80N03 K/W 10 0 tp = 54.0µs =V 100 µs 10 -1 10 -2 R 10 2 DS (on ) ID Z thJC DS /I D A D = 0.50 0.20 10 -3 0.10 0.05 1 ms 0.02 10 -4 single pulse 10 -5 -7 10 10 0.01 10 ms 10 1 -1 10 10 0 10 1 DC V 10 2 VDS Semiconductor Group -6 10 -5 10 -4 10 -3 10 -2 s tp 5 10 0 SPP80N03 Typ. output characteristics Typ. drain-source-on-resistance I D = f (VDS) RDS(on) = f (ID) parameter: tp = 80 µs parameter: V GS SPP80N03 190 SPP80N03 Ptot = 300W 0.019 A Ω kjih lgf e 160 VGS [V] a 4.0 ID d 120 100 c 80 60 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 8.5 k 9.0 l 10.0 b c d 0.016 RDS(on) 140 b a 0.014 0.012 0.010 0.008 0.006 e f g ki h jl 40 0.004 a 20 0.002 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 0.000 0 VDS VGS [V] = a 4.0 b 4.5 20 c 5.0 d 5.5 40 e f 6.0 6.5 60 g 7.0 80 h i 7.5 8.0 100 j 8.5 k l 9.0 10.0 120 A 150 ID Typ. transfer characteristics I D= f (VGS) Typ. forward transconductance parameter: tp = 80 µs VDS ≥ 2 x I D x RDS(on) max gfs = f(ID ); Tj = 25°C parameter: gfs 70 85 A S 60 70 55 60 45 gfs ID 50 40 35 50 40 30 25 30 20 20 15 10 10 5 0 0 1 2 3 4 V 0 0 6 VGS Semiconductor Group 10 20 30 40 A 60 ID 6 SPP80N03 Gate threshold voltage Drain-source on-resistance VGS(th) = f (Tj) RDS(on) = f (Tj) parameter : VGS = V DS, ID = 240 µA parameter : ID = 80 A, VGS = 10 V SPP80N03 5.0 V 0.015 Ω 4.4 4.0 VGS(th) RDS(on) 0.012 0.011 0.010 0.009 3.6 3.2 2.8 0.008 98% max 2.4 0.007 2.0 0.006 1.6 typ 0.005 0.004 1.2 0.003 0.8 min 0.002 0.4 0.001 0.000 -60 typ 0.0 -60 -20 20 60 100 140 °C -20 20 60 100 140 200 °C 200 Tj Tj Typ. capacitances Forward characteristics of reverse diode C = f (VDS) IF = f (VSD ) parameter: V GS = 0 V, f = 1 MHz parameter: Tj , tp = 80 µs 10 3 9500 SPP80N03 pF A 7500 10 2 IF C 6500 5500 4500 Ciss 10 1 3500 Tj = 25 °C typ Tj = 175 °C typ 2500 Coss Tj = 25 °C (98%) 1500 Tj = 175 °C (98%) Crss 500 0 5 10 15 20 25 30 V 10 0 0.0 40 VDS Semiconductor Group 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 7 SPP80N03 Avalanche Energy EAS = f (Tj) Typ. gate charge parameter: ID = 80 A, V DD = 25 V RGS = 25 Ω VGS = f (QGate ) parameter: ID puls = 80 A SPP80N03 16 700 mJ V 600 550 12 VGS EAS 500 450 400 10 0,2 VDS max 8 350 0,8 VDS max 300 6 250 200 4 150 100 2 50 0 20 40 60 80 100 120 140 °C 0 0 180 Tj V(BR)DSS = f (Tj) SPP80N03 37 V V(BR)DSS 35 34 33 32 31 30 29 28 -20 20 60 100 140 °C 200 Tj Semiconductor Group 40 60 80 100 120 140 nC 170 Q Gate Drain-source breakdown voltage 27 -60 20 8 SPP80N03 Edition 03 / 1999 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstraße 73, 81541 München © Siemens AG 1997 All Rights Reserved. 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