INFINEON Q62702

BFP 180
NPN Silicon RF Transistor
• For low-power amplifiers in mobile
communication systems (pager) at collector
currents from 0.2 to 2.5mA
fT = 7GHz
• F = 2.1dB at 900MHz
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFP 180
SOT-143
RDs
Q62702-F1377
1=C
2=E
3=B
4=E
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
8
Collector-emitter voltage
VCES
10
Collector-base voltage
VCBO
10
Emitter-base voltage
VEBO
2
Collector current
IC
4
Base current
IB
0.5
Total power dissipation
Ptot
TS ≤ 124 °C
Values
Unit
V
mA
mW
30
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 875
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Nov-22-1996
BFP 180
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
8
100
nA
-
-
100
IEBO
µA
-
-
1
hFE
IC = 1 mA, VCE = 5 V
Semiconductor Group
-
ICBO
VEB = 1 V, IC = 0
DC current gain
µA
-
VCB = 8 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 10 V, VBE = 0
Collector-base cutoff current
V
30
2
100
200
Nov-22-1996
BFP 180
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 3 mA, VCE = 5 V, f = 500 MHz
Collector-base capacitance
5
pF
-
0.19
0.35
-
0.27
-
-
0.13
-
Cce
VCE = 5 V, VBE = vbe = 0 , f = 1 MHz
Emitter-base capacitance
7
Ccb
VCB = 5 V, VBE = vbe = 0 , f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, VCB = vcb = 0 , f = 1 MHz
F
Noise figure
dB
IC = 1 mA, VCE = 5 V, ZS = ZSopt
f = 900 MHz
-
2.1
-
f = 1.8 GHz
-
2.25
-
f = 900 MHz
-
15
-
f = 1.8 GHz
-
12
-
f = 900 MHz
-
8.5
-
f = 1.8 GHz
-
7
-
Power gain
1)
Gms
IC = 1 mA, VCE = 5 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 1 mA, VCE = 5 V, ZS =ZL= 50 Ω
1) Gms = |S21/S12|
Semiconductor Group
3
Nov-22-1996
BFP 180
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.18519
fA
BF =
94.687
VAF =
26.867
V
IKF =
NE =
1.9818
-
VAR =
3.2134
NC =
-
NF =
1.0236
-
0.025252 A
ISE =
130.93
fA
BR =
20.325
NR =
0.93013
-
V
IKR =
0.012138 A
ISC =
6.1852
fA
1.6195
-
RB =
1.4255
Ω
IRB =
0.01
mA
RBM =
60
Ω
RE =
3.7045
Ω
RC =
0.56
Ω
CJE =
3.2473
fF
VJE =
1.1812
V
MJE =
0.41827
-
TF =
14.866
ps
XTF =
0.3062
-
VTF =
0.22023
V
ITF =
1.0202
mA
PTF =
0
deg
CJC =
183.69
fF
VJC =
1.1812
V
MJC =
0.30423
-
XCJC =
0.08334
-
TR =
2.2648
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.87906
-
TNOM
300
K
LBI =
0.89
nH
LBO =
0.73
nH
LEI =
0.4
nH
LEO =
0.15
nH
LCI =
0
nH
LCO =
0.42
nH
CBE =
189
fF
CCB =
15
fF
CCE =
187
fF
-
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Nov-22-1996
BFP 180
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
40
mW
Ptot
30
TS
25
20
TA
15
10
5
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 1
RthJS
Ptotmax/P totDC
K/W
D=0
0.005
0.001
0.02
0.05
0.1
0.2
0.5
K/W
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 2
-7
10
10
-6
10
-5
10
Semiconductor Group
-4
10
-3
10
-2
-1
10 s 10
tp
0
5
10 0
-7
10
10
-6
10
-5
10
-4
10
-3
10
-2
-1
10 s 10
tp
0
Nov-22-1996
BFP 180
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
10
0.40
GHz
pF
10V
Ccb
fT
8
8V
0.30
7
0.25
6
5V
5
0.20
0.15
4
3V
3
2V
2
1V
0.7V
0.10
0.05
0.00
0
1
2
4
6
8
V
VR
0
0.0
11
1.0
2.0
3.0
4.0
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
20
mA
IC
6.0
16
8V
10V
dB
dB
3V
G
G
5V
12
16
10
3V
8
2V
2V
14
12
6
10
1V
1V
4
8
6
0.0
0.7V
1.0
Semiconductor Group
2.0
3.0
4.0
mA
IC
0.7V
2
0
0.0
6.0
6
1.0
2.0
3.0
4.0
mA
IC
6.0
Nov-22-1996
BFP 180
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
18
10
IC=1mA
dBm
dB
8V
5V
6
0.9GHz
G
IP3
14
4
3V
2
0
2V
1.8GHz
12
-2
-4
10
1V
-6
-8
0.9GHz
8
-10
1.8GHz
-12
6
-14
4
-16
-18
0.0
0
2
4
6
8
V
12
1.0
2.0
3.0
4.0
V CE
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
mA
IC
6.0
10
40
IC=1mA
IC=1mA
dB
dB
G
S21
8
30
7
25
6
10V
5
20
4
15
1V
3
10
2
1V
0.7V
5
0
0.0
0.7V
10V
1
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz
f
0
0.0
3.5
7
0.5
1.0
1.5
2.0
2.5
GHz
f
3.5
Nov-22-1996
BFP 180
Package
Semiconductor Group
8
Nov-22-1996