PANASONIC 2SC3942

Power Transistors
2SC3942
Silicon NPN triple diffusion planar type
For color TV chroma output
Unit: mm
0.7±0.1
■ Absolute Maximum Ratings
(TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to base voltage
VCBO
300
V
Collector to emitter voltage
VCEO
300
V
Emitter to base voltage
VEBO
Peak collector current
Collector current
Collector power TC=25°C
dissipation
Ta=25°C
7
V
ICP
200
mA
IC
100
mA
10
PC
Junction temperature
Tj
Storage temperature
Tstg
■ Electrical Characteristics
Parameter
4.2±0.2
7.5±0.2
16.7±0.3
2.7±0.2
φ3.1±0.1
4.0
●
High collector to emitter VCEO
Small collector output capacitance Cob
Full-pack package which can be installed to the heat sink with
one screw
14.0±0.5
●
4.2±0.2
5.5±0.2
1.4±0.1
Solder Dip
■ Features
●
10.0±0.2
0.8±0.1
1.3±0.2
0.5 +0.2
–0.1
2.54±0.25
5.08±0.5
1
2
3
1:Base
2:Collector
3:Emitter
TO–220 Full Pack Package(a)
W
2.0
150
˚C
–55 to +150
˚C
(TC=25˚C)
Symbol
Conditions
min
typ
max
Unit
10
µA
Collector cutoff current
ICEO
VCE = 200V, IB = 0
Collector to base voltage
VCBO
IC = 10µA, IE = 0
300
V
Collector to emitter voltage
VCEO
IC = 1mA, IB = 0
300
V
Emitter to base voltage
VEBO
IE = 10µA, IC = 0
7
V
Forward current transfer ratio
hFE
VCE = 50V, IC = 5mA
50
Base to emitter voltage
VBE
VCE = 10V, IC = 30mA
Collector to emitter saturation voltage
VCE(sat)
IC = 30mA, IB = 3mA
Transition frequency
fT
VCE = 30V, IC = 20mA, f = 10MHz
Collector output capacitance
Cob
VCB = 30V, IE = 0, f = 1MHz
250
1.2
1.5
70
V
V
140
MHz
2.7
pF
1
Power Transistors
2SC3942
PC — Ta
IC — VCE
240
TC=25˚C
16
14
12
10
8
6
4
100
1.6mA
1.2mA
80
1.0mA
0.8mA
0.6mA
60
0.4mA
40
0.2mA
TC=100˚C
–25˚C
160
120
80
40
2
0
20 40 60 80 100 120 140 160 180
0
0
Ambient temperature Ta (˚C)
10
20
30
40
60
0
Collector to emitter voltage VCE (V)
VCE(sat) — IC
0.4
Forward current transfer ratio hFE
0.3
TC=100˚C
25˚C
–25˚C
0.03
240
VCE=50V
25˚C
300
1.2
1.6
2.0
fT — IE
3 I /I =10
C B
1
0.8
Base to emitter voltage VBE (V)
hFE — IC
1000
0.1
50
TC=100˚C
100
–25˚C
30
10
3
VCB=30V
f=10MHz
TC=25˚C
220
Transition frequency fT (MHz)
0
Collector to emitter saturation voltage VCE(sat) (V)
25˚C
200
20
0
200
180
160
140
120
100
80
60
40
20
0.01
1
1
3
10
30
100
1
3
Collector current IC (mA)
10
30
0
–1
100
Collector current IC (mA)
Cob — VCB
Area of safe operation (ASO)
IE=0
f=1MHz
TC=25˚C
Collector current IC (A)
0.8
0.6
0.4
Single pulse
TC=25˚C
300 ICP
t=2ms
100
IC
DC
30
10
3
1
0.2
0.3
0
0.1
1
3
10
30
100
300
1000
Collector to base voltage VCB (V)
1
3
10
30
100
300
–3
–10
–30
Emitter current IE (mA)
1000
1.0
Collector output capacitance Cob (pF)
VCE=10V
IB=2.0mA
18
Collector current IC (mA)
Collector power dissipation PC (W)
TC=Ta
2
IC — VBE
120
Collector current IC (mA)
20
1000
Collector to emitter voltage VCE (V)
–100