Power Transistors 2SC3942 Silicon NPN triple diffusion planar type For color TV chroma output Unit: mm 0.7±0.1 ■ Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 300 V Collector to emitter voltage VCEO 300 V Emitter to base voltage VEBO Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C 7 V ICP 200 mA IC 100 mA 10 PC Junction temperature Tj Storage temperature Tstg ■ Electrical Characteristics Parameter 4.2±0.2 7.5±0.2 16.7±0.3 2.7±0.2 φ3.1±0.1 4.0 ● High collector to emitter VCEO Small collector output capacitance Cob Full-pack package which can be installed to the heat sink with one screw 14.0±0.5 ● 4.2±0.2 5.5±0.2 1.4±0.1 Solder Dip ■ Features ● 10.0±0.2 0.8±0.1 1.3±0.2 0.5 +0.2 –0.1 2.54±0.25 5.08±0.5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) W 2.0 150 ˚C –55 to +150 ˚C (TC=25˚C) Symbol Conditions min typ max Unit 10 µA Collector cutoff current ICEO VCE = 200V, IB = 0 Collector to base voltage VCBO IC = 10µA, IE = 0 300 V Collector to emitter voltage VCEO IC = 1mA, IB = 0 300 V Emitter to base voltage VEBO IE = 10µA, IC = 0 7 V Forward current transfer ratio hFE VCE = 50V, IC = 5mA 50 Base to emitter voltage VBE VCE = 10V, IC = 30mA Collector to emitter saturation voltage VCE(sat) IC = 30mA, IB = 3mA Transition frequency fT VCE = 30V, IC = 20mA, f = 10MHz Collector output capacitance Cob VCB = 30V, IE = 0, f = 1MHz 250 1.2 1.5 70 V V 140 MHz 2.7 pF 1 Power Transistors 2SC3942 PC — Ta IC — VCE 240 TC=25˚C 16 14 12 10 8 6 4 100 1.6mA 1.2mA 80 1.0mA 0.8mA 0.6mA 60 0.4mA 40 0.2mA TC=100˚C –25˚C 160 120 80 40 2 0 20 40 60 80 100 120 140 160 180 0 0 Ambient temperature Ta (˚C) 10 20 30 40 60 0 Collector to emitter voltage VCE (V) VCE(sat) — IC 0.4 Forward current transfer ratio hFE 0.3 TC=100˚C 25˚C –25˚C 0.03 240 VCE=50V 25˚C 300 1.2 1.6 2.0 fT — IE 3 I /I =10 C B 1 0.8 Base to emitter voltage VBE (V) hFE — IC 1000 0.1 50 TC=100˚C 100 –25˚C 30 10 3 VCB=30V f=10MHz TC=25˚C 220 Transition frequency fT (MHz) 0 Collector to emitter saturation voltage VCE(sat) (V) 25˚C 200 20 0 200 180 160 140 120 100 80 60 40 20 0.01 1 1 3 10 30 100 1 3 Collector current IC (mA) 10 30 0 –1 100 Collector current IC (mA) Cob — VCB Area of safe operation (ASO) IE=0 f=1MHz TC=25˚C Collector current IC (A) 0.8 0.6 0.4 Single pulse TC=25˚C 300 ICP t=2ms 100 IC DC 30 10 3 1 0.2 0.3 0 0.1 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) 1 3 10 30 100 300 –3 –10 –30 Emitter current IE (mA) 1000 1.0 Collector output capacitance Cob (pF) VCE=10V IB=2.0mA 18 Collector current IC (mA) Collector power dissipation PC (W) TC=Ta 2 IC — VBE 120 Collector current IC (mA) 20 1000 Collector to emitter voltage VCE (V) –100