IRF GA100NA60U

PD - 94290
GA100NA60U
INSULATED GATE BIPOLAR TRANSISTOR
Ultra-FastTM Speed IGBT
Features
3
• UltraFastTM: Optimized for minimum saturation
voltage and operating frequencies up to 40 kHz in
hard switching, > 200 kHz in resonant mode
• Very low conduction and switching losses
• Fully isolated package (2,500 Volt AC/RMS)
• Very low internal inductance (≤ 5 nH typ.)
• Industry standard outline
VCES = 600V
2
VCE(on) typ. = 1.49V
1
@VGE = 15V, IC = 50A
4
Benefits
• Designed for increased operating efficiency in power
conversion: PFC, UPS, SMPS, Welding, Induction heating
• Lower overall losses available at frequencies ≥ 20kHz
• Easy to assemble and parallel
• Direct mounting to heatsink
• Lower EMI, requires less snubbing
• Plug-in compatible with other SOT-227 packages
SOT-227
Absolute Maximum Ratings
Parameter
VCES
IC @ TC = 25°C
IC @ TC = 100°C
ICM
ILM
VGE
VISOL
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current
Clamped Inductive Load Current‚
Gate-to-Emitter Voltage
RMS Isolation Voltage, Any Terminal to Case, t=1 min
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction
Storage Temperature Range
Mounting Torque, 6-32 or M3 Screw
Max.
Units
600
100
50
200
200
± 20
2500
250
100
-55 to + 150
-55 to + 150
12 lbf •in(1.3N•m)
V
A
V
W
°C
Thermal Resistance
Parameter
RθJC
RθJC
RθCS
Wt
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Junction-to-Case, IGBT
Thermal Resistance, Junction-to-Case , Diode
Case-to-Sink, Flat, Greased Surface
Weight of Module
Typ.
Max.
–––
–––
0.05
30
0.50
1.0
–––
–––
Units
°C/W
gm
1
7/27/01
GA100NA60U
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage➂
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance ➃
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min.
600
—
—
—
—
3.0
—
34
—
—
—
—
—
Typ. Max. Units
—
—
V
0.36 — V/°C
1.49 2.1
1.80 —
V
1.47 —
—
6.0
-7.6 — mV/°C
52
—
S
— 250
µA
—
1.3
mA
1.3 1.6
V
1.16 1.3
— ±100 nA
Conditions
VGE = 0V, IC = 250µA
VGE = 0V, IC = 1.0mA
IC = 50A
VGE = 15V
IC = 100A
See Fig. 1, 4
IC = 50A, TJ = 150°C
VCE = VGE, IC = 250µA
VCE = VGE, IC = 250µA
VCE = 100V, IC = 50A
VGE = 0V, VCE = 600V
VGE = 0V, VCE = 600V, TJ = 150°C
IC = 50A
See Fig. 12
IC = 50A, TJ = 150°C
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Ets
LE
Cies
Coes
Cres
trr
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During tb
Min.
—
—
—
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
430
48
130
57
80
240
120
0.41
2.51
2.92
57
80
380
170
4.78
2.0
7400
730
90
90
120
7.3
11
360
780
370
220
Max. Units
Conditions
640
IC = 50A
72
nC VCC = 400V
See Fig. 7
190
VGE = 15V
–––
TJ = 25°C
–––
ns
IC = 60A, VCC = 480V
—
VGE = 15V, RG = 5.0Ω
—
Energy losses include "tail" and
–––
diode reverse recovery.
–––
mJ
4.4
–––
TJ = 150°C,
–––
ns
IC = 60A, VCC = 480V
–––
VGE = 15V, RG = 5.0Ω
–––
Energy losses include "tail" and
–––
mJ diode reverse recovery.
—
nH
—
VGE = 0V
—
pF
VCC = 30V
See Fig. 6
—
ƒ = 1.0MHz
140
ns
TJ = 25°C See Fig.
180
TJ = 125°C
13
IF = 50A
11
A
TJ = 25°C See Fig.
16
TJ = 125°C
14
VR = 200V
550
nC
T J = 25°C See Fig.
1200
TJ = 125°C
15
di/dt = 200Aµs
—
A/µs TJ = 25°C See Fig.
—
TJ = 125°C
16
Details of note  through „ are on the page 7
2
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GA100NA60U
1000
TJ = 25 °C
TJ = 150 °C
100
I C, Collector-to-Emitter Current (A)
I C , Collector-to-Emitter Current (A)
1000
TJ = 150 °C
100
10
1
0.0
V GE = 15V
20µs PULSE WIDTH
1.0
2.0
3.0
4.0
TJ = 25 °C
10
5.0
VCE , Collector-to-Emitter Voltage (V)
VCE , Collector-to-Emitter Voltage(V)
Maximum DC Collector Current(A)
2.5
80
60
40
20
0
75
100
125
150
TC , Case Temperature ( ° C)
Fig. 3 - Maximum Collector Current vs. Case
Temperature
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7.0
8.0
9.0
Fig. 2 - Typical Transfer Characteristics
100
50
6.0
VGE , Gate-to-Emitter Voltage (V)
Fig. 1 - Typical Output Characteristics
25
V CC = 50V
5µs PULSE WIDTH
1
5.0
VGE = 15V
80 us PULSE WIDTH
2.0
IC = 100 A
IC = 50 A
1.5
IC = 25 A
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( ° C)
Fig. 4 - Typical Collector-to-Emitter Voltage
vs. Junction Temperature
3
GA100NA60U
Thermal Response (Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
P DM
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = PDM x Z thJC + TC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig. 5 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
14000
VGE , Gate-to-Emitter Voltage (V)
12000
C, Capacitance (pF)
20
VGE = 0V,
f = 1MHz
Cies = Cge + Cgc , Cce SHORTED
Cres = Cgc
Coes = Cce + Cgc
10000
Cies
8000
6000
Coes
4000
2000
Cres
0
16
12
8
4
0
1
10
100
VCE , Collector-to-Emitter Voltage (V)
Fig. 6 - Typical Capacitance vs.
Collector-to-Emitter Voltage
4
VCC = 400V
I C = 50A
0
100
200
300
400
500
QG , Total Gate Charge (nC)
Fig. 7 - Typical Gate Charge vs.
Gate-to-Emitter Voltage
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GA100NA60U
100
10
RG = 5.0Ω
VGE = 15V
VCC = 480V
TJ = 25°C
I C = 60A
8
Total Switching Losses (mJ)
Total Switching Losses (mJ)
VCC = 480V
VGE = 15V
6
4
IC = 120A
10
IC = 60A
IC = 30A
1
0.1
2
0
10
20
30
40
-60 -40 -20
50
R G, Gate Resistance ( Ω )
Fig. 8 - Typical Switching Losses vs. Gate
Resistance
1000
RG = 5.0Ω
TJ = 150°C
VGE = 15V
I C , Collector-to-Emitter Current (A)
Total Switching Losses (mJ)
20
40
60
80 100 120 140 160
Fig. 9 - Typical Switching Losses vs.
Junction Temperature
12
10
0
T J, Junction Temperature (°C)
VCC = 480V
8
6
4
2
VGE = 20V
T J = 125 oC
100
10
SAFE OPERATING AREA
0
1
20
40
60
80
IC , Collector Current (A)
Fig. 10 - Typical Switching Losses vs.
Collector-to-Emitter Current
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100
1
10
100
1000
VCE , Collector-to-Emitter Voltage (V)
Fig. 11 - Turn-Off SOA
5
GA100NA60U
Instantaneous forward current - IF (A)
1000
100
T J = 1 5 0 °C
T J = 1 2 5 °C
TJ =
25 °C
10
1
0.0
0.4
0.8
1.2
1.6
2.0
F orwa rd V oltag e D ro p - V F M (V )
Fig. 12 - Typical Forward Voltage Drop vs. Instantaneous Forward Current
100
150
I F = 100A
I F = 50A
I F = 25A
I F = 100A
120
I F = 50A
I F = 25A
Irr- ( A)
trr- (nC)
90
10
60
30
V R = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
0
100
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
di f /dt - (A /µ s)
1000
Fig. 13 - Typical Reverse Recovery vs. dif/dt
6
1
100
1000
di f /dt - (A/µ s)
Fig. 14 - Typical Recovery Current vs. dif/dt
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GA100NA60U
10000
4000
VR = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
V R = 2 00 V
T J = 1 2 5°C
T J = 2 5 °C
I F = 100A
IF = 100A
I F = 50A
I F = 50A
di (rec) M/dt- (A /µs)
3000
Qrr- (nC)
IF = 25A
2000
I F = 25A
1000
1000
0
100
di f /dt - (A /µ s)
1000
Fig. 15 - Typical Stored Charge vs. dif/dt
100
100
1000
di f /dt - (A/µ s)
Fig. 16 - Typical di(rec)M/dt vs. dif/dt
Notes:
➀ Repetitive rating: VGE=20V; pulse width limited by maximum junction
temperature (figure 20)
➁ VCC=80%(VCES), VGE=20V, L=10µH, RG= 5.0Ω (figure 19)
➂ Pulse width ≤ 80µs; duty factor ≤ 0.1%.
➃ Pulse width 5.0µs, single shot.
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7
GA100NA60U
Same ty pe
device as
D .U.T.
430µF
80%
of Vce
90%
D .U .T.
10%
Vge
VC
90%
td(off)
10%
IC 5%
Fig. 17a - Test Circuit for Measurement of
tf
tr
ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
t d(on)
t=5µs
E on
E off
E ts = (Eon +Eoff )
Fig. 17b - Test Waveforms for Circuit of Fig. 17a, Defining
Eoff, td(off), tf
G A T E V O L T A G E D .U .T .
1 0 % +V g
trr
Q rr =
Ic
∫
trr
id
t
Icddt
tx
+Vg
tx
10% Vcc
1 0 % Irr
V cc
D UT VO LTAG E
AN D CU RRE NT
Vce
V pk
Irr
Vcc
1 0 % Ic
Ip k
9 0 % Ic
Ic
D IO D E R E C O V E R Y
W A V E FO R M S
tr
td (o n )
5% Vce
t1
∫
t2
ce ieIcd t dt
E o n = VVce
t1
t2
E re c =
D IO D E R E V E R S E
REC OVERY ENER GY
t3
Fig. 17c - Test Waveforms for Circuit of Fig. 17a,
Defining Eon, td(on), tr
8
∫ Vc Ic dt
t4
V d id d t
t3
t4
Fig. 17d - Test Waveforms for Circuit of Fig. 17a,
Defining Erec, trr, Qrr, Irr
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GA100NA60U
V g G A T E S IG N A L
D E V IC E U N D E R T E S T
C U R R E N T D .U .T .
V O L T A G E IN D .U .T .
C U R R E N T IN D 1
t0
t1
t2
Figure 17e. Macro Waveforms for Figure 17a's Test Circuit
D.U.T.
L
1000V
Vc*
RL=
480V
4 X IC @25°C
0 - 480V
50V
6000µ F
100 V
Figure 18. Clamped Inductive Load Test Circuit
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Figure 19. Pulsed Collector Current
Test Circuit
9
GA100NA60U
SOT-227 Package Details
Dimensions are shown in millimeters ( inches )
3 8 .3 0 ( 1.5 08 )
3 7 .8 0 ( 1.4 88 )
4 .4 0 (.17 3 )
4 .2 0 (.16 5 )
C HAM FER
2 .0 0 ( .0 7 9 ) X 45 7
L E A D A S S IG M E N T S
E
-A 4
A
S
C
3
G
E
IG B T
2 5 .7 0 ( 1.0 12 )
2 5 .2 0 ( .9 9 2 )
6.2 5 ( .24 6 )
1 2.50 ( .4 92 )
A1
-B 1
C
D
4
1
R FULL
7 .50 ( .29 5 )
1 5.00 ( .5 90 )
2
S G
G
E,K
HEXFET
IGBT
K2
3
4
1
2
3
2
K1 A2
H E XF R E D
3 0 .2 0 ( 1 .1 89 )
2 9 .8 0 ( 1 .1 73 )
4X
2 .1 0 ( .0 82 )
1 .9 0 ( .0 75 )
8.10 ( .3 19 )
7.70 ( .3 03 )
0 .25 ( .01 0 ) M C A M B M
2 .10 ( .08 2 )
1 .90 ( .07 5 )
12 .3 0 ( .4 84 )
11 .8 0 ( .4 64 )
-C 0.1 2 ( .00 5 )
Tube
QUANTITIES PER TUBE IS 10
M4 SCREW AND WASHER INCLUDED
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.7/01
10
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