SIPC42S2N08 Preliminary data OptiMOSâ Chip data sheet Feature • N-Channel • Enhancement mode • 175°C operating temperature • Avalanche rated • dv/dt rated • Integrated gate resistance VDS 75 V RDS(on) 4.2 mΩ Die size 7x6 mm2 Thickness 175 µm for easy parallel connection Ordering Code unsawn wafer on foil on request sawn wafer on foil Q67061-S7146 surf tape on request DESCRIPTION • Assembly by epoxy die bonding or soldering • AQL 1.5 for visual inspection according to failure catalog A67207-A7001-A001 issue C on 100% measured wafer • Storage of chips and wafer according technical guideline 14 Doc. No. A66003-R14-T1-B-35 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current 1)2) ID 227 A EAS 1070 mJ 50 mJ TC=25°C Avalanche energy, single pulse1) ID =80A, VDD =25V, RGS =25Ω Repetitive avalanche energy, limited by Tjmax 1)2) EAR Gate source voltage VGS Additional gate resistance RG Operating and storage temperature Tj , Tstg ±20 V 5 ±20% Ω -55... +175 °C 1Defined by design. Not subject to production test. 2Calculated with R = 0.3 K/W thJC Infineon AG, AI AP APE, Informations #184R 1 2002-02-01 SIPC42S2N08 Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 75 - - VGS(th) 2.1 3 4 Static Characteristics Drain-source breakdown voltage V VGS =0V, ID =1mA Gate threshold voltage, VGS = VDS ID = 250 µA Zero gate voltage drain current µA IDSS VDS =75V, VGS =0V, Tj=25°C - 0.01 1 VDS =75V, VGS =0V, 125°C, 1) - 1 100 IGSS - 1 100 nA RDS(on) - 3.7 4.2 mΩ Qgs - 27 36 nC Qgd - 82 123 Qg - 189 251 VSD - 0.9 1.3 Gate-source leakage current VGS =20V, VDS=0V On-state resistance1) VGS =10V, ID=134A Dynamic Characteristics1) Gate to source charge VDD =60V, ID=80A Gate to drain charge VDD =60V, ID=80A Gate charge total VDD =60V, ID=80A, VGS=0 to 10V Reverse Diode1) Inverse diode forward voltage V VGS =0V, IF =80A 1Defined by design. Not subject to production test. Infineon AG, AI AP APE, Informations #184R 2 2002-02-01 Preliminary data SIPC42S2N08 CHIP Parameters - Saw street width Passivation frontside Nitride Metalization frontside 5µ AlSiCu Metalization gate pad AlSiCu Metalization backside Ni-Ag System Die bond applicable: soft or glue Wire bond Al wedge-wedge Chip - Layout: Infineon AG, AI AP APE, Informations #184R 3 2002-02-01 Preliminary data SIPC42S2N08 Additional information for bonding: Infineon AG, AI AP APE, Informations #184R 4 2002-02-01 Preliminary data SIPC42S2N08 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Further information Please notice that the part number is BSIPC42S2N08, for simplicity the device is referred to by the term SIPC42S2N08 throughout this documentation. Infineon AG, AI AP APE, Informations #184R 5 2002-02-01