Bulletin I27190 02/05 50MT060WHA 50MT060WHTA "HALF-BRIDGE" IGBT MTP Warp Speed IGBT Features VCES = 600V • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor (NTC) • Al2O3 DBC • Very Low Stray Inductance Design for High Speed Operation • UL E78996 approved VCE(on) typ. = 2.3V @ VGE = 15V, IC = 50A TC = 25°C Benefits • Optimized for Welding, UPS and SMPS Applications • Operating Frequencies > 20 kHz Hard Switching, >200 kHz Resonant Mode • Low EMI, requires Less Snubbing • Direct Mounting to Heatsink • PCB Solderable Terminals • Very Low Junction-to-Case Thermal Resistance MMTP Absolute Maximum Ratings Parameters V CES Collector-to-Emitter Voltage IC Continuos Collector Current I CM Pulsed Collector Current I LM Peak Switching Current I Diode Continuous Forward Current Max @ T C = 25°C @ T C = 109°C F V 114 A 50 350 350 @ T C = 109°C 34 I FM Peak Diode Forward Current V GE Gate-to-Emitter Voltage ± 20 V ISOL RMS Isolation Voltage, Any Terminal to Case, t = 1 min 2500 PD Maximum Power Dissipation @ T C = 25°C 658 @ T C = 100°C 263 www.irf.com Units 600 200 V W 1 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameters V(BR)CES Collector-to-Emitter Breakdown Voltage V CE(on) Collector-to-Emitter Voltage V GE(th) I CES V FM Gate Threshold Voltage Collector-to-Emiter Leaking Current Diode Forward Voltage Drop I GES Gate-to-Emitter Leakage Current Min Typ Max Units Test Conditions 600 V 2.3 2.5 1.72 3 3.15 3.2 2.17 6 0.4 10 1.58 1.80 1.49 1.68 1.9 2.17 ± 250 mA V nA V GE = 0V, I C = 500µA V GE = 15V, I C = 50A V GE = 15V, I C = 100A V GE = 15V, I C = 50A, TJ = 150°C I C = 0.5mA V GE = 0V, V CE = 600V V GE = 0V, V CE = 600V, TJ = 150°C I F = 50A, V GE = 0V I F = 50A, V GE = 0V, T J = 150°C I F = 100A, V GE = 0V, T J = 25°C V GE = ± 20V Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameters Min Typ Max Units Test Conditions Qg Qge Qgc Eon Total Gate Charge (turn-on) Gate-Emitter Charge (turn-on) Gate-Collector Charge (turn-on) Turn-On Switching Loss 331 44 133 0.26 385 52 176 nC Eoff Ets Turn-Off Switching Loss Total Switching Loss 1.2 1.46 Eon Eoff Ets Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss 0.73 1.66 2.39 mJ Cies Coes Cres trr Irr Qrr trr Irr Qrr Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge Diode Reverse Recovery Time Diode Peak Reverse Current Diode Recovery Charge 7100 510 140 82 8.3 340 137 12.7 870 pF mJ IC = 52A V CC = 400V VGE = 15V Internal gate resistors (see Electrical Diagram) IC = 50A, VCC = 480V, VGE = 15V, L = 200µH Energy losses include tail and diode reverse recovery Internal gate resistors (see Electrical diagram) IC = 50A, VCC = 480V, VGE = 15V, L = 200µH Energy losses include tail and diode reverse 97 10.6 514 153 14.8 1132 ns A nC ns A nC recovery, TJ = 150°C VGE = 0V VCC = 30V f = 1.0 MHz VCC = 200V, IC = 50A di/dt = 200A/µs VCC = 200V, IC = 50A di/dt = 200A/µs TJ = 125°C Thermistor Specifications (50MT060WHTA only) Parameters R0 (1) β (1) 2 (1) (2) Min Typ Resistance Sensitivity index of the thermistor material T0,T1 are thermistor's temperatures (2) R0 R1 Max Units Test Conditions 30 kΩ T0 = 25°C 4000 K T 0 = 25°C T1 = 85°C = exp [ β ( 1T 0 1 )] T1 www.irf.com 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Thermal- Mechanical Specifications Parameters TJ TSTG RthJC RthCS Min Typ Max Units °C Operating Junction IGBT, Diode - 40 150 Temperature Range Thermistor - 40 125 Storage Temperature Range Junction-to-Case - 40 IGBT 125 0.38 Case-to-Sink Diode Module °C/ W 0.8 0.06 (Heatsink Compound Thermal Conductivity = 1 W/mK) Clearance (3) ( external shortest distance in air 5.5 mm between two terminals) Creepage (3) ( shortest distance along the external 8 surface of the insulating material between 2 terminals) T Mounting torque to heatsink Wt Weight (4) 3 ± 10% Nm 66 g (3) Standard version only i.e. without optional thermistor (4) A mounting compound is recommended and the torque should be checked after 3 hours to allow for the spread of the compound. Lubricated threads 120 Vge = 15V 20µs Pulse Width 10 Maximum DC Collector Current (A) IC, Collector-to-Emitter Current (A) 100 TJ = 150˚C T J = 25˚C 1 0.1 1 VCE, Collector-to-Emitter Voltage (V) Fig. 1 - Typical Output Characteristics www.irf.com 10 100 80 60 40 20 0 25 50 75 100 125 150 TC, Case Temperature (°C) Fig. 2 - Maximum Collector Current vs. Case Temperature 3 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 20 2.5 VGE, Gate-to-Emitter Voltage (V) VCE , Collector-to-Emitter Voltage (V) 3 I C = 100A I C = 50A 2 1.5 I C= 20A 1 20 Vcc = 400V Ic = 52A 16 12 8 4 0 40 60 80 0 100 120 140 160 100 200 300 TJ, Junction Temperature (°C) QG, Total Gate Charge (nC) Fig. 3 - Typical Collector-to-Emitter Voltage vs. Junction Temperature Fig. 4 - Typical Gate Charge vs. Gate-toEmitter Voltage 400 Instantaneous Forward Current - I F (A) 100 10 TJ = 150˚C TJ = 125˚C TJ = 25˚C 1 0.4 0.8 1.2 1.6 2 2.4 Forward Voltage Drop - VFM (V) Fig. 5 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current 4 www.irf.com 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 100 160 Vr = 200V 140 Vr = 200V I F = 50A, Tj = 125˚C I F = 50A, Tj = 125˚C t rr (ns) I RRM (A) 120 10 I F = 50A, Tj = 25˚C 100 I F = 50A, Tj = 25˚C 80 60 100 1000 dif /dt - (A/µs) Fig. 6 - Typical Reverse Recovery vs. dif/dt 1 100 di f /dt - (A/µs) 1000 Fig. 7 - Typical Reverse Recovery Current vs. dif/dt 2000 Vr = 200V I F = 50A, Tj = 125˚C Q RR (nC) 1500 1000 500 I = 50A, Tj = 25˚C F 0 100 1000 dif /dt - (A/µs) Fig. 8 - Typical Stored Charge vs. di f/dt www.irf.com 5 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Outline Table Functional Diagram Electrical Diagram Resistance in ohms Dimensions in millimetres Note: unused terminals are not assembled in the package 6 www.irf.com 50MT060WHA, 50MT060WHTA Bulletin I27190 02/05 Ordering Information Table Device Code 50 1 MT 060 2 3 W H T A 4 5 6 7 1 - Current Rating (50 = 50A) 2 - Essential Part Number 3 - Voltage rating (060 = 600V) 4 - Speed/ Type 5 - Circuit Configuration (H 6 - Special Option (W = Warp IGBT) = Half Bridge) y none = no special option yT 7 - = Thermistor A = Al 2O3 DBC Substrate Data and specifications subject to change without notice. This product has been designed and qualified for Industrial Level. Qualification Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7309 Visit us at www.irf.com for sales contact information. 02/05 www.irf.com 7