OM60N06SA OM60N05SA OM50N06ST OM50N06SA OM50N05SA OM50N05ST LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE 50V And 60V Ultra Low RDS(on) Power MOSFETs In TO-257 And TO-254 Isolated Packages FEATURES • • • • • Isolated Hermetic Metal Packages Ultra Low RDS(on) Low Conductive Loss/Low Gate Charge Available Screened To MIL-S-19500, TX, TXV And S Levels Ceramic Feedthroughs Available DESCRIPTION This series of hermetic packaged MOSFETs are ideally suited for low voltage applications; battery powered voltage power supplies, motor controls, dc to dc converters and synchronous rectification. The low conduction loss allows smaller heat sinking and the low gate charge simpler drive circuitry. MAXIMUM RATINGS (Per Device) PART NO. OM60N06SA OM50N06SA OM50N06ST OM60N05SA OM50N05SA OM50N05ST VDS (V) 60 60 60 50 50 50 SCHEMATIC Drain RDS(on) ( ) .025 .030 .035 .025 .030 .035 ID (A) 60 50 50 60 50 50 T-3 PIN CONNECTION Package TO-254AA TO-254AA TO-257AA TO-254AA TO-254AA TO-257AA 3.1 M-PAK PIN CONNECTION 1 2 3 Gate 1 Source 4 11 R1 Supersedes 3 02 R0 Pin 1: Drain Pin 2: Source Pin 3: Gate 3.1 - 65 Pin 1: Drain Pin 2: Source Pin 3: Gate 2 3 OM60N06SA - OM50N05ST ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter 60N06SA 50N06ST 50N05SA 60N05SA 50N05ST 50N05SA Units VDS Drain-Source Voltage 60 60 50 50 V VDGR Drain-Gate Voltage (RGS = 1 M ) 60 60 50 50 V VGS Gate-Source Voltage, Continuous +20 +20 +20 +20 V ID @ TC = 25°C Continuous Drain Current2 55 50 55 50 A ID @ TC = 100°C Continuous Drain Current2 37 33 37 33 A IDM Pulsed Drain Current1 220 200 220 200 A PD @ TC = 25°C Maximum Power Dissipation 100 100 100 100 W PD @ TC = 100°C Maximum Power Dissipation 40 40 40 40 W Junction-To-Case Linear Derating Factor1 .80 .80 .80 .80 W/°C TJ Operating and -55 to 150 -55 to 150 Tstg Storage Temperature Range 300 300 Lead Temperature (1/16" from case for 10 secs.) -55 to 150 -55 to 150 300 300 °C °C 1 Pulse Test: Pulse width 300 µsec. Duty Cycle 1.5%. 2 Package Limited SA ID = 25 A, SC SC I D = 35 A @ 25° C THERMAL RESISTANCE RthJC Junction-to-Case 1.25 °C/W PACKAGE LIMITATIONS Parameters ID TO254AA Continuous Drain Current Unit 25 15 A .020 .015 W/°C Thermal Resistance, Junction-to-Ambient (Free Air Operation) 50 65 °C/W Linear Derating, Junction-to-Case 0.8 0.8 W/°C Linear Derating Factor, Junction-to-Ambient RthJA TO-257AA 3.1 PACKAGE OPTIONS T-3 MECHANICAL OUTLINE M-PAK MECHANICAL OUTLINE MOD PAK Z-TAB Notes: • Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA. • MOSFETs are also available in Z-Pak, dual and quad pak styles. Please call the factory for more information. 3.1 - 66 6 PIN SIP OM60N06SA - OM50N05ST 3.1 3.1 - 67 OM60N06SA - OM50N05ST 3.1 3.1 - 68 OM60N06SA - OM50N05ST 3.1 3.1 - 69 OM60N06SA - OM50N05ST Switching Times Test Circuits For Resistive Load Test Circuit For Inductive Load Switching And Diode Reverse Recovery Time TYPICAL CHARACTERISTICS Gate Charge vs Gate-Source Voltage Capacitance Variations Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature 3.1