VISHAY SI1555DL-T1

Si1555DL
Vishay Siliconix
Complementary Low-Threshold MOSFET Pair
FEATURES
PRODUCT SUMMARY
N-Channel
P-Channel
20
−8
rDS(on) (W)
ID (A)
0.385 @ VGS = 4.5 V
0.70
0.630 @ VGS = 2.5 V
0.54
0.600 @ VGS = −4.5 V
−0.60
0.850 @ VGS = −2.5 V
−0.50
1.200 @ VGS = −1.8 V
−0.42
D TrenchFETr Power MOSFET
Pb-free
Available
SOT-363
SC-70 (6-LEADS)
Marking Code
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
RB
XX
YY
VDS (V)
Lot Traceability
and Date Code
Part # Code
Ordering Information: Si1555DL-T1
Si1555DL-T1—E3 (Lead (Pb)-Free)
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Symbol
5 secs
P-Channel
Steady State
5 secs
Steady State
Drain-Source Voltage
VDS
20
−8
Gate-Source Voltage
VGS
"12
"8
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
"0.70
"0.66
−0.60
−0.57
"0.50
"0.48
−0.43
−0.41
IDM
Unit
A
"1.0
0.25
0.23
−0.25
−0.23
0.30
0.27
0.30
0.27
0.16
0.14
0.16
0.14
TJ, Tstg
W
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
M i
Maximum
JJunction-to-Ambient
ti t A bi ta
Maximum Junction-to-Foot (Drain)
Symbol
t v 5 sec
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
360
415
400
460
300
350
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
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Si1555DL
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
Gate Body Leakage
Gate-Body
Zero Gate Voltage Drain Current
On State Drain Currenta
On-State
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
VGS(th)
IGSS
IDSS
ID(on)
D( )
rDS(on)
gfs
f
VSD
VDS = VGS, ID = 250 mA
N-Ch
0.6
1.4
VDS = VGS, ID = −250 mA
P-Ch
−0.45
−1.0
VDS = 0 V, VGS = "12 V
N-Ch
"100
VDS = 0 V, VGS = "8 V
P-Ch
"100
VDS = 20 V, VGS = 0 V
N-Ch
1
VDS = −8 V, VGS = 0 V
P-Ch
−1
VDS = 20 V, VGS = 0 V, TJ = 85_C
N-Ch
5
VDS = −8 V, VGS = 0 V, TJ = 85_C
P-Ch
VDS w 5 V, VGS = 4.5 V
N-Ch
1.0
VDS p −5 V, VGS = −4.5 V
P-Ch
−1.0
V
nA
mA
−5
A
VGS = 4.5 V, ID = 0.66 A
N-Ch
0.320
0.385
VGS = −4.5 V, ID = −0.57 A
P-Ch
0.510
0.600
VGS = 2.5 V, ID = 0.40 A
N-Ch
0.560
0.630
VGS = −2.5 V, ID = −0.48 A
P-Ch
0.720
0.850
VGS = −1.8 V, ID = −0.20 A
P-Ch
1.00
1.200
VDS = 10 V, ID = 0.66 A
N-Ch
1.5
VDS = −4 V, ID = −0.57 A
P-Ch
1.2
IS = 0.23 A, VGS = 0 V
N-Ch
0.8
1.2
IS = −0.23 A, VGS = 0 V
P-Ch
−0.8
−1.2
N-Ch
0.8
1.2
P-Ch
1.5
2.3
N-Ch
0.06
P-Ch
0.17
N-Ch
0.30
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate Source Charge
Gate-Source
Qgs
Gate Drain Charge
Gate-Drain
Qgdd
Turn On Delay Time
Turn-On
Rise Time
Turn Off Delay Time
Turn-Off
Fall Time
Source-Drain
Reverse Recovery Time
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 0.66 A
P-Channel
VDS = −4
4V
V, VGS = −4.5
45V
V, ID = −0.57
0 57 A
nC
P-Ch
0.16
N-Ch
10
20
P-Ch
6
12
tr
N-Channel
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, Rg = 6 W
N-Ch
16
30
P-Ch
25
50
td(off)
d( ff)
P-Channel
VDD = −4
4V
V, RL = 8 W
ID ^ −0.5
0.5 A, VGEN = −4.5
4.5 V, Rg = 6 W
N-Ch
10
20
P-Ch
10
20
N-Ch
10
20
td(on)
d( )
tf
trr
P-Ch
10
20
IF = 0.23 A, di/dt = 100 A/ms
N-Ch
20
40
IF = −0.23 A, di/dt = 100 A/ms
P-Ch
20
40
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
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Document Number: 71079
S-50245—Rev. D, 21-Feb-05
Si1555DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Output Characteristics
Transfer Characteristics
1.0
1.0
VGS = 5 thru 2.5 V
0.8
2V
I D − Drain Current (A)
I D − Drain Current (A)
0.8
0.6
0.4
0.2
0.0
0.0
1.5 V
1.0
1.5
2.0
0.4
TC = 125_C
0.2
25_C
−55_C
1V
0.5
0.6
2.5
0.0
0.0
3.0
0.5
VDS − Drain-to-Source Voltage (V)
1.0
2.5
Capacitance
100
0.8
80
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
On-Resistance vs. Drain Current
VGS = 2.5 V
0.4
2.0
VGS − Gate-to-Source Voltage (V)
1.0
0.6
1.5
VGS = 4.5 V
0.2
Ciss
60
40
Coss
20
Crss
0.0
0.0
0
0.2
0.4
0.6
0.8
1.0
0
4
ID − Drain Current (A)
Gate Charge
16
20
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 0.66 A
VGS = 4.5 V
ID = 0.66 A
4
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
12
VDS − Drain-to-Source Voltage (V)
5
3
2
1
0
0.0
8
0.2
0.4
0.6
Qg − Total Gate Charge (nC)
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
0.8
1.2
1.0
0.8
0.6
−50
−25
0
25
50
75
100
125
150
TJ − Junction Temperature (_C)
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Si1555DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.0
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
1
TJ = 150_C
TJ = 25_C
0.8
ID = 0.66 A
0.6
0.4
0.2
0.0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
VSD − Source-to-Drain Voltage (V)
Threshold Voltage
3
4
5
Single Pulse Power
0.2
5
0.1
4
ID = 250 mA
−0.0
Power (W)
V GS(th) Variance (V)
2
VGS − Gate-to-Source Voltage (V)
−0.1
3
2
−0.2
1
−0.3
−0.4
−50
−25
0
25
50
75
100
125
150
0
10−3
10−2
10−1
TJ − Temperature (_C)
1
10
100
600
Time (sec)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 400_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
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4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
Si1555DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Foot
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
1.0
VGS = 5 thru 2.5 V
Transfer Characteristics
1.0
TC = −55_C
2V
0.8
I D − Drain Current (A)
0.8
I D − Drain Current (A)
P−CHANNEL
0.6
1.5 V
0.4
0.2
25_C
125_C
0.6
0.4
0.2
1V
0.0
0.0
0.5
1.0
1.5
2.0
2.5
0.0
0.0
3.0
VDS − Drain-to-Source Voltage (V)
0.5
1.0
On-Resistance vs. Drain Current
Capacitance
C − Capacitance (pF)
r DS(on) − On-Resistance ( W )
2.5
160
VGS = 1.8 V
1.0
VGS = 2.5 V
VGS = 4.5 V
0.5
0.0
0.0
2.0
VGS − Gate-to-Source Voltage (V)
2.0
1.5
1.5
Ciss
120
80
Coss
40
Crss
0
0.2
0.4
0.6
ID − Drain Current (A)
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
0.8
1.0
0
2
4
6
8
VDS − Drain-to-Source Voltage (V)
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Si1555DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Gate Charge
On-Resistance vs. Junction Temperature
1.6
VDS = 4 V
ID = 0.57 A
VGS = 4.5 V
ID = 0.57 A
4
1.4
rDS(on) − On-Resiistance
(Normalized)
V GS − Gate-to-Source Voltage (V)
5
3
2
1
0
0.0
1.2
1.0
0.8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.6
−50
1.6
−25
0
Qg − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
r DS(on) − On-Resistance ( W )
I S − Source Current (A)
TJ = 150_C
TJ = 25_C
100
125
150
1.5
ID = 0.57 A
1.0
0.5
0.0
0.2
0.4
0.6
0.8
1.0
0
1.2
1
2
3
4
5
VGS − Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.4
5
0.3
4
ID = 250 mA
0.2
Power (W)
V GS(th) Variance (V)
75
On-Resistance vs. Gate-to-Source Voltage
VSD − Source-to-Drain Voltage (V)
0.1
3
2
0.0
1
−0.1
−0.2
−50
−25
0
25
50
75
TJ − Temperature (_C)
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6
50
2.0
1
0.1
0.0
25
TJ − Junction Temperature (_C)
100
125
150
0
10−3
10−2
10−1
1
10
100
600
Time (sec)
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
Si1555DL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P−CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
0.02
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 400_C/W
3. TJM − TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10−4
10−3
10−2
10−1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10−4
10−3
10−2
10−1
Square Wave Pulse Duration (sec)
1
10
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and
Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see
http://www.vishay.com/ppg?71079.
Document Number: 71079
S-50245—Rev. D, 21-Feb-05
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Document Number: 91000
Revision: 18-Jul-08
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