VISHAY SI1563EDH

Si1563EDH
New Product
Vishay Siliconix
Complementary 20-V (D-S) Low-Threshold MOSFET
FEATURES
PRODUCT SUMMARY
rDS(on) (W)
ID (A)
0.280 @ VGS = 4.5 V
1.28
D TrenchFETr Power MOSFETS: 1.8-V Rated
D ESD Protected: 2000 V
D Thermally Enhanced SC-70 Package
0.360 @ VGS = 2.5 V
1.13
APPLICATIONS
VDS (V)
N-Channel
20
P-Channel
–20
0.450 @ VGS = 1.8 V
1.00
0.490 @ VGS = –4.5 V
–1.00
0.750 @ VGS = –2.5 V
–0.81
1.10 @ VGS = –1.8 V
–0.67
D Load Switching
D PA Switch
D Level Switch
D1
SOT-363
SC-70 (6-LEADS)
1
6
D1
Marking Code
EA
G1
D2
5
2
3
XX
G2
Lot Traceability
and Date Code
G2
3 kW
Part # Code
S2
4
1 kW
G1
YY
S1
S2
N-Channel
Top View
P-Channel
S1
D2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
N-Channel
Parameter
Symbol
5 secs
P-Channel
Steady State
5 secs
Steady State
Drain-Source Voltage
VDS
20
–20
Gate-Source Voltage
VGS
"12
"12
Continuous Drain Current (TJ = 150_C)
_ a
TA = 25_C
TA = 85_C
Pulsed Drain Current
ID
Continuous Source Current (Diode Conduction)a
IS
TA = 25_C
Maximum Power Dissipationa
TA = 85_C
Operating Junction and Storage Temperature Range
PD
V
1.28
1.13
–1.00
–0.88
0.92
0.81
–0.72
–0.63
IDM
4.0
A
–3.0
0.61
0.48
–0.61
–0.48
0.74
0.57
0.30
0.57
0.38
0.30
0.16
0.3
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
130
170
170
220
80
100
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71416
S-03943—Rev. B, 21-May-01
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Si1563EDH
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 100 mA
N-Ch
0.45
VDS = VGS, ID = –100 mA
P-Ch
–0.45
VDS = 0 V, VGS = "4.5
"
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "12
" V
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
IDSS
ID(on)
rDS(on)
gfs
VSD
V
N-Ch
"1
P-Ch
"1
N-Ch
"10
P-Ch
"10
VDS = 16 V, VGS = 0 V
N-Ch
1
VDS = –16 V, VGS = 0 V
P-Ch
–1
VDS = 16 V, VGS = 0 V, TJ = 85_C
N-Ch
5
VDS = –16 V, VGS = 0 V, TJ = 85_C
P-Ch
VDS w 5 V, VGS = 4.5 V
N-Ch
2
VDS p –5 V, VGS = –4.5 V
P-Ch
–2
m
mA
mA
m
mA
–5
A
VGS = 4.5 V, ID = 1.13 A
N-Ch
0.220
0.280
VGS = –4.5 V, ID = –0.88 A
P-Ch
0.400
0.490
VGS = 2.5 V, ID = 0.99 A
N-Ch
0.281
0.360
VGS = –2.5 V, ID = –0.71 A
P-Ch
0.610
0.750
VGS = 1.8 V, ID = 0.20 A
N-Ch
0.344
0.450
VGS = –1.8 V, ID = –0.20 A
P-Ch
0.850
1.10
VDS = 10 V, ID = 1.13 A
N-Ch
2.6
VDS = –10 V, ID = –0.88 A
P-Ch
1.5
IS = 0.48 A, VGS = 0 V
N-Ch
0.8
1.2
IS = –0.48 A, VGS = 0 V
P-Ch
–0.8
–1.2
N-Ch
0.65
1.0
P-Ch
1.2
1.8
N-Ch
0.2
P-Ch
0.3
N-Ch
0.23
W
S
V
Dynamicb
Total Gate Charge
Qg
N-Channel
VDS = 10 V, VGS = 4.5 V, ID = 1.13 A
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Qgs
nC
P-Channel
VDS = –10 V, VGS = –4.5 V, ID = –0.88 A
Qgd
td(on)
P-Ch
0.3
N-Ch
45
70
P-Ch
150
230
N-Ch
85
130
tr
N-Channel
VDD = 10 V, RL = 20 W
ID ^ 0.5 A, VGEN = 4.5 V, RG = 6 W
P-Ch
480
720
N-Ch
350
530
td(off)
P-Channel
VDD = –10 V, RL = 20 W
ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W
tf
P-Ch
840
1200
N-Ch
210
320
P-Ch
850
1200
ns
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
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Document Number: 71416
S-03943—Rev. B, 21-May-01
Si1563EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
10
10,000
I GSS – Gate Current (mA)
I GSS – Gate Current (mA)
1,000
8
6
4
100
10
TJ = 150_C
1
0.1
TJ = 25_C
2
0.01
0
0.001
0
4
8
12
16
0
3
VGS – Gate-to-Source Voltage (V)
6
9
Output Characteristics
15
Transfer Characteristics
2.0
2.0
VGS = 5 thru 2 V
TC = –55_C
1.5
25_C
1.5
1.5 V
I D – Drain Current (A)
I D – Drain Current (A)
12
VGS – Gate-to-Source Voltage (V)
1.0
0.5
125_C
1.0
0.5
1V
0.0
0
1
2
3
0.0
0.0
4
0.5
VDS – Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
2.0
Capacitance
140
120
0.5
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
1.5
VGS – Gate-to-Source Voltage (V)
0.6
0.4
1.0
VGS = 1.8 V
VGS = 2.5 V
0.3
VGS = 4.5 V
0.2
100
Ciss
80
60
40
Coss
0.1
0.0
0.0
Crss
20
0
0.5
1.0
ID – Drain Current (A)
Document Number: 71416
S-03943—Rev. B, 21-May-01
1.5
2.0
0
4
8
12
16
20
VDS – Drain-to-Source Voltage (V)
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Si1563EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Gate Charge
On-Resistance vs. Junction Temperature
1.6
VDS = 10 V
ID = 1.28 A
4
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
5
3
2
1
0
0.0
0.3
0.6
0.9
1.2
VGS = 4.5 V
ID = 1.13 A
1.4
1.2
1.0
0.8
0.6
–50
1.5
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
25
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.6
TJ = 150_C
0.5
r DS(on) – On-Resistance ( W )
I S – Source Current (A)
1
TJ = 25_C
0.4
ID = 1.13 A
0.3
0.2
0.1
0.0
0.1
0
0.4
0.2
0.6
0.8
1.0
0
1.2
VSD – Source-to-Drain Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.2
5
ID = 100 mA
0.1
4
–0.0
Power (W)
V GS(th) Variance (V)
0
TJ – Junction Temperature (_C)
2
–0.1
3
2
–0.2
1
–0.3
–0.4
–50
–25
0
25
50
75
TJ – Temperature (_C)
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4
–25
100
125
150
0
0.01
0.1
1
10
100
600
Time (sec)
Document Number: 71416
S-03943—Rev. B, 21-May-01
Si1563EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
N-CHANNEL
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 170_C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
10
P-CHANNEL
Gate-Current vs. Gate-Source Voltage
Gate Current vs. Gate-Source Voltage
8
10,000
I GSS – Gate Current (mA)
I GSS – Gate Current (mA)
1,000
6
4
2
100
TJ = 150_C
10
1
0.1
TJ = 25_C
0.01
0
0.001
0
4
8
12
VGS – Gate-to-Source Voltage (V)
Document Number: 71416
S-03943—Rev. B, 21-May-01
16
0
3
6
9
12
VGS – Gate-to-Source Voltage (V)
15
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Si1563EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Output Characteristics
Transfer Characteristics
3.0
3.0
VGS = 5 thru 3 .5V
3V
2.5 V
2.0
1.5
2V
1.0
1.5 V
0.5
TC = –55_C
2.5
I D – Drain Current (A)
I D – Drain Current (A)
2.5
25_C
2.0
1.5
125_C
1.0
0.5
1V
0.0
0
1
2
3
0.0
0.0
4
0.5
VDS – Drain-to-Source Voltage (V)
1.0
2.0
2.5
3.0
3.5
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
1.6
160
VGS = 1.8 V
1.2
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
1.5
VGS = 2.5 V
0.8
VGS = 4.5 V
0.4
Ciss
120
80
40
Coss
Crss
0.0
0.0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
4
Gate Charge
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
VDS = 10 V
ID = 1 A
2
1
0.2
0.4
0.6
0.8
1.0
Qg – Total Gate Charge (nC)
6
20
1.6
3
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16
On-Resistance vs. Junction Temperature
5
0
0.0
12
VDS – Drain-to-Source Voltage (V)
ID – Drain Current (A)
4
8
1.2
1.4
1.4
VGS = 4.5 V
ID = 0.88 A
1.2
1.0
0.8
0.6
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Document Number: 71416
S-03943—Rev. B, 21-May-01
Si1563EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
P-CHANNEL
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
1.6
2
I S – Source Current (A)
r DS(on) – On-Resistance ( W )
TJ = 150_C
1
TJ = 25_C
1.2
ID = 0.88 A
0.8
0.4
0.0
0.1
0
0.4
0.2
0.6
0.8
1.0
0
1.2
VSD – Source-to-Drain Voltage (V)
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power, Junction-to-Ambient
0.30
5
0.25
ID = 100 mA
4
0.20
0.15
3
Power (W)
V GS(th) Variance (V)
1
0.10
0.05
2
–0.00
–0.05
1
–0.10
–0.15
–50
–25
0
25
50
75
100
125
150
0
0.01
0.1
1
10
100
600
Time (sec)
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
Notes:
0.1
0.1
PDM
0.05
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 170_C/W
0.02
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
Document Number: 71416
S-03943—Rev. B, 21-May-01
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
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Si1563EDH
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Normalized Thermal Transient Impedance, Junction-to-Foot
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
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8
10–3
10–2
10–1
Square Wave Pulse Duration (sec)
1
10
Document Number: 71416
S-03943—Rev. B, 21-May-01
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