BFR 92W NPN Silicon RF Transistor • For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA • Complementary type: BFT 92W (PNP) ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration Package BFR 92W SOT-323 P1s Q62702-F1488 1=B 2=E 3=C Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 15 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2.5 Collector current IC 30 Base current IB 4 Total power dissipation Ptot TS ≤ 86 °C Values Unit V mA mW 280 Junction temperature Tj Ambient temperature TA - 65 ... + 150 Storage temperature Tstg - 65 ... + 150 150 °C Thermal Resistance Junction - soldering point 1) RthJS ≤ 230 K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-10-1996 BFR 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC Characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current 15 10 nA - - 100 IEBO µA - - 100 hFE IC = 15 mA, VCE = 8 V Semiconductor Group - ICBO VEB = 2.5 V, IC = 0 DC current gain µA - VCB = 10 V, IE = 0 Emitter-base cutoff current - ICES VCE = 20 V, VBE = 0 Collector-base cutoff current V 40 2 100 200 Dec-10-1996 BFR 92W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. AC Characteristics Transition frequency fT IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance 3.5 pF - 0.43 0.6 - 0.25 - - 0.7 - Cce VCE = 10 V, f = 1 MHz Emitter-base capacitance 5 Ccb VCB = 10 V, f = 1 MHz Collector-emitter capacitance GHz Ceb VEB = 0.5 V, f = 1 MHz F Noise figure dB IC = 2 mA, VCE = 6 V, ZS = ZSopt f = 900 MHz - 1.8 - f = 1.8 GHz - 2.9 - f = 900 MHz - 15.5 - f = 1.8 GHz - 10 - f = 900 MHz - 13 - f = 1.8 GHz - 7.5 - Power gain 2) Gma IC = 15 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt Transducer gain |S21e|2 IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-10-1996 BFR 92W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.1213 fA BF = 94.733 - NF = 1.0947 - VAF = 30 V IKF = 0.46227 A ISE = 129.55 fA NE = 1.9052 - BR = 10.729 - NR = 0.8983 - VAR = 14.599 V IKR = 0.01 A ISC = 0.75557 fA NC = 1.371 - RB = 14.998 Ω IRB = 0.01652 mA RBM = 7.8145 Ω RE = 0.29088 Ω RC = 0.13793 Ω CJE = 10.416 fF VJE = 0.70618 V MJE = 0.34686 - TF = 26.796 ps XTF = 0.3817 - VTF = 0.32861 V ITF = 4.4601 mA PTF = 0 deg CJC = 946.47 fF VJC = 0.84079 V MJC = 0.4085 - XCJC = 0.13464 - TR = 1.2744 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.99545 - TNOM 300 K LBI = 0.57 nH LBO = 0.4 nH LEI = 0.43 nH LEO = 0.5 nH LCI = 0 nH LCO = 0.41 nH CBE = 61 fF CCB = 101 fF CCE = 175 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut für Mobil-und Satellitenfunktechnik (IMST) © 1996 SIEMENS AG Package Equivalent Circuit: Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-10-1996 BFR 92W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 300 mW Ptot 200 TS 150 TA 100 50 0 0 20 40 60 80 100 120 °C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 3 K/W - RthJS Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 Semiconductor Group 10 -3 10 10 1 -2 -1 10 s 10 tp 0 5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 -1 10 s 10 tp 0 Dec-10-1996 BFR 92W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 0.9 6.0 GHz pF 5.0 Ccb fT 10V 4.5 0.7 4.0 3V 3.5 0.6 3.0 2V 2.5 0.5 2.0 1.5 0.4 1V 1.0 0.7V 0.5 0.3 0.0 0 4 8 12 16 V VR 22 0 5 10 15 20 Power Gain Gma, Gms = f(IC) Power Gain Gma, Gms = f(IC) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 25 mA IC 35 12 18 dB 10V dB 10V 5V 14 G 5V G 3V 12 2V 10 8 3V 6 2V 8 4 6 2 4 2 0.7V 0 1V 0 1V -2 -2 -6 0 -4 0.7V -4 5 10 Semiconductor Group 15 20 25 mA IC -6 0 35 6 5 10 15 20 25 mA IC 35 Dec-10-1996 BFR 92W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 Intermodulation Intercept Point IP3=f(IC) = f(VCE):--------- (3rd order, Output, ZS=ZL=50Ω) f = Parameter VCE = Parameter, f = 900MHz 25 18 IC=15mA 0.9GHz dB G 5V IP3 14 4V dBm 3V 0.9GHz 12 10 8 2V 15 1.8GHz 1.8GHz 1V 10 6 4 5 2 0 0 0 2 4 6 8 10 V 13 V CE 0 5 10 15 Power Gain Gma, Gms = f(f) Power Gain |S21|2= f(f) VCE = Parameter VCE = Parameter 32 dB 28 IC=15mA 20 mA IC 30 IC=15mA dB G 26 S21 20 22 16 18 12 14 8 10 10V 10V 2V 4 3V 6 1V 1V 0 2 0.7V -2 0.0 0.5 1.0 Semiconductor Group 1.5 2.0 2.5 GHz f 0.7V -4 0.0 3.5 7 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Dec-10-1996