INFINEON Q62702

BFR 92W
NPN Silicon RF Transistor
• For broadband amplifiers up to 2GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
• Complementary type: BFT 92W (PNP)
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFR 92W
SOT-323
P1s
Q62702-F1488
1=B
2=E
3=C
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
VCEO
15
Collector-emitter voltage
VCES
20
Collector-base voltage
VCBO
20
Emitter-base voltage
VEBO
2.5
Collector current
IC
30
Base current
IB
4
Total power dissipation
Ptot
TS ≤ 86 °C
Values
Unit
V
mA
mW
280
Junction temperature
Tj
Ambient temperature
TA
- 65 ... + 150
Storage temperature
Tstg
- 65 ... + 150
150
°C
Thermal Resistance
Junction - soldering point
1)
RthJS
≤ 230
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
1
Dec-10-1996
BFR 92W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CEO
IC = 1 mA, IB = 0
Collector-emitter cutoff current
15
10
nA
-
-
100
IEBO
µA
-
-
100
hFE
IC = 15 mA, VCE = 8 V
Semiconductor Group
-
ICBO
VEB = 2.5 V, IC = 0
DC current gain
µA
-
VCB = 10 V, IE = 0
Emitter-base cutoff current
-
ICES
VCE = 20 V, VBE = 0
Collector-base cutoff current
V
40
2
100
200
Dec-10-1996
BFR 92W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min.
typ.
Unit
max.
AC Characteristics
Transition frequency
fT
IC = 15 mA, VCE = 8 V, f = 500 MHz
Collector-base capacitance
3.5
pF
-
0.43
0.6
-
0.25
-
-
0.7
-
Cce
VCE = 10 V, f = 1 MHz
Emitter-base capacitance
5
Ccb
VCB = 10 V, f = 1 MHz
Collector-emitter capacitance
GHz
Ceb
VEB = 0.5 V, f = 1 MHz
F
Noise figure
dB
IC = 2 mA, VCE = 6 V, ZS = ZSopt
f = 900 MHz
-
1.8
-
f = 1.8 GHz
-
2.9
-
f = 900 MHz
-
15.5
-
f = 1.8 GHz
-
10
-
f = 900 MHz
-
13
-
f = 1.8 GHz
-
7.5
-
Power gain
2)
Gma
IC = 15 mA, VCE = 8 V, ZS = ZSopt
ZL = ZLopt
Transducer gain
|S21e|2
IC = 15 mA, VCE = 8 V, ZS =ZL= 50 Ω
2) Gma = |S21/S12| (k-(k2-1)1/2)
Semiconductor Group
3
Dec-10-1996
BFR 92W
SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) :
Transistor Chip Data
IS =
0.1213
fA
BF =
94.733
-
NF =
1.0947
-
VAF =
30
V
IKF =
0.46227
A
ISE =
129.55
fA
NE =
1.9052
-
BR =
10.729
-
NR =
0.8983
-
VAR =
14.599
V
IKR =
0.01
A
ISC =
0.75557
fA
NC =
1.371
-
RB =
14.998
Ω
IRB =
0.01652
mA
RBM =
7.8145
Ω
RE =
0.29088
Ω
RC =
0.13793
Ω
CJE =
10.416
fF
VJE =
0.70618
V
MJE =
0.34686
-
TF =
26.796
ps
XTF =
0.3817
-
VTF =
0.32861
V
ITF =
4.4601
mA
PTF =
0
deg
CJC =
946.47
fF
VJC =
0.84079
V
MJC =
0.4085
-
XCJC =
0.13464
-
TR =
1.2744
ns
CJS =
0
fF
VJS =
0.75
V
MJS =
0
-
XTB =
0
-
EG =
1.11
eV
XTI =
3
-
FC =
0.99545
-
TNOM
300
K
LBI =
0.57
nH
LBO =
0.4
nH
LEI =
0.43
nH
LEO =
0.5
nH
LCI =
0
nH
LCO =
0.41
nH
CBE =
61
fF
CCB =
101
fF
CCE =
175
fF
All parameters are ready to use, no scalling is necessary.
Extracted on behalf of SIEMENS Small Signal Semiconductors by:
Institut für Mobil-und Satellitenfunktechnik (IMST)
© 1996 SIEMENS AG
Package Equivalent Circuit:
Valid up to 6 GHz
For examples and ready to use parameters please contact your local Siemens distributor or sales office to
obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm
Semiconductor Group
4
Dec-10-1996
BFR 92W
Total power dissipation Ptot = f (TA*, TS)
* Package mounted on epoxy
300
mW
Ptot
200
TS
150
TA
100
50
0
0
20
40
60
80
100
120 °C 150
TA ,TS
Permissible Pulse Load RthJS = f (tp)
Permissible Pulse Load Ptotmax/PtotDC = f (tp)
10 3
10 3
K/W
-
RthJS
Ptotmax/PtotDC
10 2
D=0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 2
10 1
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D=0
10 0
10 -1
-6
10
10
-5
10
-4
Semiconductor Group
10
-3
10
10 1
-2
-1
10
s 10
tp
0
5
10 0
-6
10
10
-5
10
-4
10
-3
10
-2
-1
10
s 10
tp
0
Dec-10-1996
BFR 92W
Collector-base capacitance Ccb = f (VCB)
VBE = vbe = 0, f = 1MHz
Transition frequency fT = f (IC)
VCE = Parameter
0.9
6.0
GHz
pF
5.0
Ccb
fT
10V
4.5
0.7
4.0
3V
3.5
0.6
3.0
2V
2.5
0.5
2.0
1.5
0.4
1V
1.0
0.7V
0.5
0.3
0.0
0
4
8
12
16
V
VR
22
0
5
10
15
20
Power Gain Gma, Gms = f(IC)
Power Gain Gma, Gms = f(IC)
f = 0.9GHz
f = 1.8GHz
VCE = Parameter
VCE = Parameter
25
mA
IC
35
12
18
dB
10V
dB
10V
5V
14
G
5V
G
3V
12
2V
10
8
3V
6
2V
8
4
6
2
4
2
0.7V
0
1V
0
1V
-2
-2
-6
0
-4
0.7V
-4
5
10
Semiconductor Group
15
20
25
mA
IC
-6
0
35
6
5
10
15
20
25
mA
IC
35
Dec-10-1996
BFR 92W
Power Gain Gma, Gms = f(VCE):_____
|S21
|2
Intermodulation Intercept Point IP3=f(IC)
= f(VCE):---------
(3rd order, Output, ZS=ZL=50Ω)
f = Parameter
VCE = Parameter, f = 900MHz
25
18
IC=15mA
0.9GHz
dB
G
5V
IP3
14
4V
dBm
3V
0.9GHz
12
10
8
2V
15
1.8GHz
1.8GHz
1V
10
6
4
5
2
0
0
0
2
4
6
8
10
V
13
V CE
0
5
10
15
Power Gain Gma, Gms = f(f)
Power Gain |S21|2= f(f)
VCE = Parameter
VCE = Parameter
32
dB
28
IC=15mA
20
mA
IC
30
IC=15mA
dB
G
26
S21
20
22
16
18
12
14
8
10
10V
10V
2V
4
3V
6
1V
1V
0
2
0.7V
-2
0.0
0.5
1.0
Semiconductor Group
1.5
2.0
2.5
GHz
f
0.7V
-4
0.0
3.5
7
0.5
1.0
1.5
2.0
2.5
GHz
f
3.5
Dec-10-1996