PHILIPS TDA1560Q

INTEGRATED CIRCUITS
DATA SHEET
TDA1560Q
40 W car radio high power amplifier
Product specification
Supersedes data of 1995 Jul 07
File under Integrated Circuits, IC01
1996 May 14
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
FEATURES
GENERAL DESCRIPTION
• Very high output power
The TDA1560Q is an integrated Bridge-Tied Load (BTL)
class-H high power amplifier. In a load of 8 Ω, the output
power is 40 W typical at a THD of 10%.
• Low power dissipation when used for music signals
• Switches to low output power in the event of excessive
heatsink temperatures
The encapsulation is a 17-lead DIL-bent-SIL plastic power
package. The device is primarily developed for car radio
applications.
• Requires few external components
• Fixed gain
• Low cross-over distortion
• No switch-on/switch-off plops
• Mode select switch
• Low offset voltage at the output
• Load dump protection
• Short-circuit safe to ground, VP and across load
• Protected against electrostatic discharge
• Thermally protected
• Diagnostic facility
• Flexible leads.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
supply voltage
VP
CONDITIONS
MIN.
TYP.
MAX.
UNIT
operating
8.0
14.4
18
V
non-operating
−
−
30
V
load dump protected
−
−
45
V
4
A
IORM
repetitive peak output current
−
−
Iq(tot)
total quiescent current
−
100
160
mA
Isb
standby current
−
5
50
µA
Gv
voltage gain
29
30
31
dB
Po
output power
SVRR
supply voltage ripple rejection
Vno
noise output voltage
RL = 8 Ω; THD = 10%
−
40
−
W
RL = 8 Ω; THD = 0.5%
−
30
−
W
fi = 100 Hz to 10 kHz;
RS = 0 Ω
48
55
−
dB
−
100
300
µV
Zi
input impedance
180
300
−
kΩ
∆VO
DC output offset voltage
−
−
150
mV
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
TDA1560Q
1996 May 14
NAME
DESCRIPTION
VERSION
DBS17P
plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
2
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
BLOCK DIAGRAM
C1
C1n
handbook, full pagewidth
13
S1
17
10 k Ω
disable
VP
C1p
10
9
SUPPLY
TEMPERATURE
SENSOR
TDA1560Q
14
VP
INPp
7
1
POWER
STAGE
150
kΩ
150
kΩ
INPn
Vref
MODE
GND
VDIAG
POWER
STAGE
2
INPUT AND
FEEDBACK
CIRCUIT
4
16
LOAD DUMP
TEMPERATURE
AND CURRENT
PROTECTION
11
OUT2p
VP
15 k Ω
voltage
reference
3
SUPPLY
disable
15
CDEC
5
8
C2n
C2p
C2
Fig.1 Block diagram.
1996 May 14
OUT1n
3
12
GND
6
GND
MCD334 - 1
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
PINNING
SYMBOL
PIN
DESCRIPTION
INPp
1
positive input
INPn
2
negative input
GND
3
ground
Vref
4
reference voltage
C2n
5
GND
handbook, halfpage
INPp
1
INPn
2
GND
3
capacitor C2 negative terminal
Vref
4
6
ground
C2n
5
OUT1n
7
output 1 (negative)
GND
6
C2p
8
capacitor C2 positive terminal
OUT1n
7
VP
9
supply voltage
10
capacitor C1 positive terminal
C2p
8
C1p
OUT2p
11
output 2 (positive)
VP
9
GND
12
ground
C1n
13
capacitor C1 negative terminal
VDIAG
14
diagnostic voltage output
CDEC
15
decoupling
MODE
16
mode select switch input
S1
17
class-B/class-H input switch
TDA1560Q
C1p 10
OUT2p 11
GND 12
C1n 13
V DIAG 14
C DEC 15
MODE 16
S1 17
MCD329 - 1
Fig.2 Pin configuration.
1996 May 14
4
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
The open voltage on the class-B/class-H pin is related to
the global temperature of the crystal. By measuring this
voltage, external actions can be taken to reduce an
excessive temperature (e.g. by cutting off low frequencies
or externally switching to class-B). For the relationship
between the crystal temperature and the voltage on this
pin, see Fig.3.
FUNCTIONAL DESCRIPTION
The TDA1560Q contains a mono class-H BTL output
power amplifier. At low output power, up to 10 W, the
device operates as a normal BTL amplifier. When a larger
output voltage swing is required, the internal supply
voltage is lifted to approximately twice the external supply
voltage. This extra supply voltage is obtained from the
charge in the external electrolytic capacitors. Due to this
momentarily higher supply voltage, the maximum output
power is 40 W typical at a THD of 10%.
By forcing a high voltage level on the class-B/class-H pin,
thereby simulating a high temperature, the device can be
externally switched to class-B operation. Similarly, by
forcing a low voltage level on the class-B/class-H pin,
thereby simulating a low temperature, the device can be
forced into class-H operation, even if the case temperature
exceeds 120 °C.
In normal use, when the output is driven with music-type
signals, the high output power is only required for a small
percentage of the time. Assuming a music signal has a
normal (Gaussian) amplitude distribution, the reduction in
dissipation is approximately 50% when compared to a
class-B output amplifier with the same output power.
The heatsink should be designed for use with music
signals.
The device is fully protected against short-circuiting of the
outputs to ground or VP and across the load, high crystal
temperature and electrostatic discharge at all input and
output pins. In the event of a continuing short-circuit to
ground or VP, excessive dissipation is prevented because
the output stages will be switched off. The output stages
will be switched on again within 20 ms after the
short-circuit has been removed.
If the device is continuous sine wave driven, instead of
driven with music signals and at a high output power
(class-H operation), the case temperature can rise above
120 °C with such a practical heatsink. In this event, the
thermal protection disables the high power supply voltage
and limits the output power to 10 W and the maximum
dissipation to 5 W.
A diagnostic facility is available at pin 14. In normal
conditions the voltage at this pin will be the supply voltage
(VP). In the event of the following conditions:
• Junction temperature exceeds 150 °C
The gain of each amplifier is internally fixed at 30 dB. With
the mode select input the device can be switched to the
following modes:
• Short-circuit of one of the outputs to ground or to VP
• Load dump; VP > 20 V.
• Low standby current (<50 µA)
The voltage level at pin 14 will be at a constant level of
approximately 1⁄2VP during fault condition. At a short-circuit
over the load, pin 14 will be at 1⁄2VP for approximately
20 ms and VP for approximately 50 µs.
• Mute condition, DC adjusted
• On, operation in class-B, limited output power
• On, operation in class-H, high output power.
The device can be used as a normal BTL class-AB
amplifier if the electrolytic capacitors C1 and C2 are
omitted; see Fig.6. If the case temperature exceeds
120 °C, the device will switch back from class-H to class-B
operation. The high power supply voltage is then disabled
and the output power is limited to 10 W. By measuring the
voltage on the class-B/class-H pin, the actual crystal
temperature can be detected.
1996 May 14
5
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VP
PARAMETER
CONDITIONS
supply voltage
MIN.
MAX.
UNIT
operating
−
18
V
non-operating
−
30
V
load dump protection; tr ≥ 2.5 ms −
45
V
IOSM
non-repetitive peak output current
−
6
A
IORM
repetitive peak output current
−
4
A
VP(sc)
AC and DC short-circuit safe voltage
−
18
V
−
200
mJ
Ecap
energy handling capability at outputs VP = 0
I17
current at pin 17
−
5
mA
Ptot
total power dissipation
−
60
W
Tstg
storage temperature
−55
+150
°C
Tamb
operating ambient temperature
−40
−
°C
V17 < VP − 1
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
40
K/W
Rth j-case
thermal resistance from junction to case (measured in Fig.6)
3
K/W
Heatsink design
EXAMPLE 2
There are two parameters that determine the size of the
heatsink. The first is the rating for the case temperature
and the second is the ambient temperature at which the
amplifier must still deliver its full power in the class-H
mode.
With disabled class-H mode, an 8 Ω load and driven with
a sine wave signal the maximum power dissipation is
approximately 5 W. At a virtual junction temperature of
150 °C and Tamb(max) at 60 °C, Rth vj-case = 3 K/W and
Rth case-h = 1 K/W the thermal resistance of the heatsink
should be:
EXAMPLE 1
150 – 60
---------------------- – 3 – 1 = 14 K/W
5
With an 8 Ω load and driven with a music signal, the
maximum power dissipation is approximately 6.5 W. If the
amplifier is to deliver its full power at ambient temperatures
up to 50 °C the case temperature should not be higher
than120 °C for class-H operation.
In this example the size of the heatsink is determined by
the virtual junction temperature.
Rth case-h = 1 K/W, thus the external heatsink should be:
120 – 50
---------------------- – 1.0 = 10 K/W
6.5
In this example and with an 8 Ω load, the size of the
heatsink is determined by the rating for the maximum full
power ambient temperature. If the case temperature of the
device exceeds 120 °C then the device switches back to
class-B, see “Example 2”.
1996 May 14
6
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
DC CHARACTERISTICS
VP = 14.4 V; RL = 8 Ω; Tamb = 25 °C and using 4 K/W heatsink; measured in Fig.6; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Supply
VP
supply voltage
Iq(tot)
total quiescent current
VO
DC output voltage
∆VO
DC output offset voltage
V14
diagnostic output voltage
note 1
note 2
note 3
8.0
14.4
18.0
V
−
100
160
mA
−
6.5
−
V
−
−
150
mV
6
−
8
V
Mode select switch (see Fig.4)
V16
switch input voltage level
standby condition
0
−
1.2
V
mute condition
2.6
−
3.5
V
class-B operation
4.5
−
7.0
V
8.5
−
VP
V
−
−
20
µA
standby condition
−
5
50
µA
class-H operation
ISW max
maximum switch current
Isb
DC supply current
∆VO
DC output offset voltage
VO
output signal voltage in mute condition
mute condition
−
−
150
mV
mute-on step; note 4
−
−
150
mV
Vi(max) = 1 V;
fi = 20 Hz to 15 kHz
−
−
2
mV
class-B operation
2.5
−
VP − 1 V
class-H operation
0
−
1.0
V
note 6
−
−
2
mA
−
120
−
°C
Class-B/class-H operation (see Fig.3 and note 5)
V17
switch input voltage level
ISW
switch current
Tcase
case temperature for switching to class-B
Notes
1. The circuit is DC adjusted at VP = 8 to 18 V and AC operating at VP = 8.5 to 18 V.
2. The DC output voltage, or the common mode voltage on the loudspeaker terminals with respect to ground, is 6.3 V
at output power up to 8.5 W. At higher output power, the common mode voltage will be higher.
3. The voltage at pin 14 is approximately 1⁄2VP in the event of a short-circuit, load dump or temperature protection. Any
circuit connected to pin 14 should have an input resistance of >2 MΩ and an input capacitance of <5 nF.
4. The DC output offset voltage step is the difference in output offset voltage in the mute condition and the on condition.
The absolute value of this voltage step is given as +∆Vo mute − ∆Vo on < 150 mV.
5. Figure 3 shows the relationship between the global crystal temperature and the open voltage at the
class-B/class-H pin.
6. The maximum voltage on pin 17 is VP − 1 (VP ≤ 18 V).
1996 May 14
7
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
VP
MCD332 - 1
3
handbook, halfpage
handbook, halfpage
Class - H
8.5
8
V17
(V)
95%
V16
50%
(V)
7
2
6
5%
Class - B
5
4
1
3
Mute
2
0
0
40
80
120
Tvj ( oC)
1
160
Standby
0
MCD331 - 1
Fig.3 Class-B/class-H pin voltage level.
1996 May 14
Fig.4 Switching levels of mode select switch.
8
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
AC CHARACTERISTICS
VP = 14.4 V; RL = 8 Ω; fi = 1 kHz; Tamb = 25 °C and using 4 K/W heatsink; measured in Fig.6;
unless otherwise specified.
SYMBOL
Po
PARAMETER
output power
CONDITIONS
MIN.
TYP.
MAX.
UNIT
class-H operation
THD = 0.5%
27
30
−
W
THD = 10%;
continuously driven
36
39
−
W
THD = 10%;
with burst signals; note 1
−
40
−
W
7
10
−
W
class-B operation
THD = 10%
THD
total harmonic distortion
Po = 1 W
−
0.05
−
%
Po = 10 W
−
0.1
−
%
B
power bandwidth
THD = 0.5%; Po = −1 dB
with respect to 30 W; note 2
−
40 to 15000
−
Hz
flr
low frequency roll-off
−3 dB; note 3
−
40
−
Hz
fhr
high frequency roll-off
−1 dB
20
−
−
kHz
Gv
voltage gain
29
30
31
dB
SVRR
supply voltage ripple rejection
on
48
55
−
dB
mute
48
65
−
dB
standby
80
−
−
dB
64
−
−
dB
−
1.2
−
V
CMRR
common mode rejection ratio
Vi(max)
maximum input voltage
Vno
noise output voltage
ZI
input impedance
note 4
note 5
on; RS = 0 Ω; note 6
−
100
300
µV
on; RS = 10 kΩ; note 6
−
150
−
µV
mute; notes 6 and 7
−
100
−
µV
note 8
180
300
−
kΩ
Notes
1. With a continuous sine wave input signal the output power is approximately 1 W less than driven with a bursted
signal; also depending on the equivalent series resistance of the electrolytic capacitors C1 and C2 (see Fig.6) and
the resistance of the connections between pins 5, 8, 10 and 13 and C1, C2.
2. The power bandwidth is limited by the value of the electrolytic capacitors C1 and C2.
3. Frequency response is externally fixed by the input coupling capacitor.
4. Ripple rejection measured at the output, across RL, with a source impedance of 0 Ω and a frequency between 100 Hz
and 10 kHz, and an amplitude of 2 V (p-p). The maximum supply voltage ripple is 2.5 V RMS.
5. The common mode rejection ratio is measured at the output, across RL, with a voltage source (500 mV RMS)
between both short-circuited inputs and signal ground (see Fig.5). Frequencies are between 100 Hz and 10 kHz.
6. Noise output voltage measured in a bandwidth of 20 Hz to 20 kHz.
7. Noise output voltage independent of source impedance.
8. Input impedance without external resistor (Rex).
1996 May 14
9
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
handbook, full pagewidth
+VP
VP
input ( )
input ( )
9
1
output 1 ( )
7
TDA1560Q
2
RL
11
6,12
3
output 2 ( )
ground
MCD330 - 1
Fig.5 Common mode rejection ratio measurements.
Table 1
Values of capacitors C1, C2 and Ck and frequency roll off
1996 May 14
f at −3 dB
(Hz)
C1, C2
(µF)
Ck
(nF)
10
4700
560
20
3300
270
30
2200
180
40
2200
150
50
1500
100
60
1500
82
70
1000
68
10
1996 May 14
11
150 nF
Ck
input (+)
Vref
input (–)
0.22 µ F
3
16
4
2
1
15
10 k Ω
150
kΩ
150
kΩ
voltage
reference
15 k Ω
INPUT AND
FEEDBACK
CIRCUIT
TEMPERATURE
SENSOR
5
9
Fig.6 Test and application diagram.
12
LOAD DUMP
TEMPERATURE
AND CURRENT
PROTECTION
TDA1560Q
0.22 µ F
2Ω
8
POWER
STAGE
POWER
STAGE
SUPPLY
VP
VP
SUPPLY
2200 µF
disable
disable
10
0.22 µF
6
ground
11 output 2 (+)
7 output 1 (–)
diagnostic
14 output
100 nF
MCD333 - 3
1Ω
0.22 µ F
0.22 µ F
1Ω
2200 µF
VP
40 W car radio high power amplifier
The values for Ck and Rex are given for a low frequency roll off (−3 dB) of 40 Hz; see also Table 1.
n this application circuit the device is driven on input pin 1.If pin 2 is used the output power will be lower.
mode select switch
10 µ F
150 nF
Ck
Rex = 100 k Ω
input
S1
17
13
2200 µ F
handbook, full pagewidth
2Ω
Philips Semiconductors
Product specification
TDA1560Q
APPLICATION INFORMATION
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
MLB062
MLB063
24
50
handbook, halfpage
handbook, halfpage
sine wave
Pdiss
Po
(W)
(W)
40
16
pink noise
50 Hz
30
25 Hz
8
20
0
0
0
10
20
30
Po (W)
0
40
2
4
6
8
10
C1, C2 (mF)
THD = 10%.
Fig.7 Dissipation as a function of output power.
Fig.8 Output power as a function of lift capacitors.
MLB064
40
handbook, full pagewidth
Po
(W)
30
11100 µF
8800 µF
6600 µF
20
4400 µF
2200 µF
10
10
10 2
Fig.9 Output power as a function of frequency at THD = 1%.
1996 May 14
12
f (Hz)
10 3
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
MLB065
40
handbook, full pagewidth
Po
(W)
11100 µF
8800 µF
30
6600 µF
4400 µF
20
2200 µF
10
10
10 2
f (Hz)
10 3
Fig.10 Output power as a function of frequency at THD = 10%.
MLB066
handbook, full pagewidth
10
THD
(%)
f = 100 Hz
C1, C2 = 2200 µF
1
f = 1 kHz
f = 10 kHz
10 1
10
2
0
10
20
30
Fig.11 Total harmonic distortion as a function of output power.
1996 May 14
13
Po (W)
40
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
PACKAGE OUTLINE
DBS17P: plastic DIL-bent-SIL power package; 17 leads (lead length 12 mm)
SOT243-1
non-concave
Dh
x
D
Eh
view B: mounting base side
d
A2
B
j
E
A
L3
L
Q
c
1
v M
17
e1
Z
bp
e
e2
m
w M
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A2
bp
c
D (1)
d
Dh
E (1)
e
mm
17.0
15.5
4.6
4.2
0.75
0.60
0.48
0.38
24.0
23.6
20.0
19.6
10
12.2
11.8
2.54
e1
e2
1.27 5.08
Eh
j
L
L3
m
Q
v
w
x
Z (1)
6
3.4
3.1
12.4
11.0
2.4
1.6
4.3
2.1
1.8
0.8
0.4
0.03
2.00
1.45
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
95-03-11
97-12-16
SOT243-1
1996 May 14
EUROPEAN
PROJECTION
14
Philips Semiconductors
Product specification
40 W car radio high power amplifier
TDA1560Q
The device may be mounted up to the seating plane, but
the temperature of the plastic body must not exceed the
specified maximum storage temperature (Tstg max). If the
printed-circuit board has been pre-heated, forced cooling
may be necessary immediately after soldering to keep the
temperature within the permissible limit.
SOLDERING
Introduction
There is no soldering method that is ideal for all IC
packages. Wave soldering is often preferred when
through-hole and surface mounted components are mixed
on one printed-circuit board. However, wave soldering is
not always suitable for surface mounted ICs, or for
printed-circuits with high population densities. In these
situations reflow soldering is often used.
Repairing soldered joints
Apply a low voltage soldering iron (less than 24 V) to the
lead(s) of the package, below the seating plane or not
more than 2 mm above it. If the temperature of the
soldering iron bit is less than 300 °C it may remain in
contact for up to 10 seconds. If the bit temperature is
between 300 and 400 °C, contact may be up to 5 seconds.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “IC Package Databook” (order code 9398 652 90011).
Soldering by dipping or by wave
The maximum permissible temperature of the solder is
260 °C; solder at this temperature must not be in contact
with the joint for more than 5 seconds. The total contact
time of successive solder waves must not exceed
5 seconds.
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 May 14
15
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COPENHAGEN S, Tel. (032) 88 2636, Fax. (031) 57 1949
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. (358) 0-615 800, Fax. (358) 0-61580 920
France: 4 Rue du Port-aux-Vins, BP317,
92156 SURESNES Cedex,
Tel. (01) 4099 6161, Fax. (01) 4099 6427
Germany: P.O. Box 10 51 40, 20035 HAMBURG,
Tel. (040) 23 53 60, Fax. (040) 23 53 63 00
Greece: No. 15, 25th March Street, GR 17778 TAVROS,
Tel. (01) 4894 339/4894 911, Fax. (01) 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Shivsagar Estate, A Block,
Dr. Annie Besant Rd. Worli, BOMBAY 400 018
Tel. (022) 4938 541, Fax. (022) 4938 722
Indonesia: see Singapore
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. (01) 7640 000, Fax. (01) 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, TEL AVIV 61180,
Tel. (03) 645 04 44, Fax. (03) 648 10 07
Italy: PHILIPS SEMICONDUCTORS,
Piazza IV Novembre 3, 20124 MILANO,
Tel. (0039) 2 6752 2531, Fax. (0039) 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108, Tel. (03) 3740 5130, Fax. (03) 3740 5077
Korea: Philips House, 260-199 Itaewon-dong,
Yongsan-ku, SEOUL, Tel. (02) 709-1412, Fax. (02) 709-1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,
SELANGOR, Tel. (03) 750 5214, Fax. (03) 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO,
TEXAS 79905, Tel. 9-5(800) 234-7831, Fax. (708) 296-8556
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. (040) 2783749, Fax. (040) 2788399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. (09) 849-4160, Fax. (09) 849-7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. (022) 74 8000, Fax. (022) 74 8341
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC,
MAKATI, Metro MANILA,
Tel. (63) 2 816 6380, Fax. (63) 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. (022) 612 2831, Fax. (022) 612 2327
Portugal: see Spain
Romania: see Italy
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,
Tel. (65) 350 2000, Fax. (65) 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd.,
195-215 Main Road Martindale, 2092 JOHANNESBURG,
P.O. Box 7430 Johannesburg 2000,
Tel. (011) 470-5911, Fax. (011) 470-5494
South America: Rua do Rocio 220 - 5th floor, Suite 51,
CEP: 04552-903-SÃO PAULO-SP, Brazil,
P.O. Box 7383 (01064-970),
Tel. (011) 821-2333, Fax. (011) 829-1849
Spain: Balmes 22, 08007 BARCELONA,
Tel. (03) 301 6312, Fax. (03) 301 4107
Sweden: Kottbygatan 7, Akalla. S-16485 STOCKHOLM,
Tel. (0) 8-632 2000, Fax. (0) 8-632 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. (01) 488 2211, Fax. (01) 481 77 30
Taiwan: PHILIPS TAIWAN Ltd., 23-30F, 66,
Chung Hsiao West Road, Sec. 1, P.O. Box 22978,
TAIPEI 100, Tel. (886) 2 382 4443, Fax. (886) 2 382 4444
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. (66) 2 745-4090, Fax. (66) 2 398-0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. (0212) 279 2770, Fax. (0212) 282 6707
Ukraine: PHILIPS UKRAINE,
2A Akademika Koroleva str., Office 165, 252148 KIEV,
Tel. 380-44-4760297, Fax. 380-44-4766991
United Kingdom: Philips Semiconductors LTD.,
276 Bath Road, Hayes, MIDDLESEX UB3 5BX,
Tel. (0181) 730-5000, Fax. (0181) 754-8421
United States: 811 East Arques Avenue, SUNNYVALE,
CA 94088-3409, Tel. (800) 234-7381, Fax. (708) 296-8556
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. (381) 11 825 344, Fax. (359) 211 635 777
Internet: http://www.semiconductors.philips.com/ps/
For all other countries apply to: Philips Semiconductors,
Marketing & Sales Communications, Building BE-p,
P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands,
Fax. +31-40-2724825
SCDS48
© Philips Electronics N.V. 1996
All rights are reserved. Reproduction in whole or in part is prohibited without the
prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation
or contract, is believed to be accurate and reliable and may be changed without
notice. No liability will be accepted by the publisher for any consequence of its
use. Publication thereof does not convey nor imply any license under patent- or
other industrial or intellectual property rights.
Printed in The Netherlands
517021/1200/04/pp16
Document order number:
Date of release: 1996 May 14
9397 750 00844