Document No. 001-76543 Rev. *B ECN #:4339025 Cypress Semiconductor Product Qualification Report QTP# 98244 VERSION*B April, 2014 Synchronous/Asynchronous Dual Port SRAM (3.3V and 5V) R42HD Technology, Fab 4 CY7C026(V)/CY7C036(V) 16K x 16/18 Asynchronous DP SRAM CY7C025(V)/CY7C0251(V) 8K x 16/18 Asynchronous DP SRAM CY7C024(V)/CY7C0241(V) 4K x 16/18 Asynchronous DP SRAM CY7C09269(V)/CY7C09369(V) 16K x16/18 Synchronous DP SRAM CY7C09349(V)/CY7C09359(V) 4K/8K x 18 Synchronous DP SRAM CY7C007(V)/CY7C017(V) 32K x 8/9 Asynchronous DP SRAM CY7C006(V)/CY7C016(V) 16K x 8/9 Asynchronous DP SRAM CY7C144(V)/CY7C145(V) 8K x 8/9 Asynchronous DP SRAM CY7C138(V)/CY7C139(V) 4K x 8/9 Asynchronous DP SRAM CY7C09079(V)/CY7C09179(V) 32K x 8/9 Synchronous DP SRAM CY7C09159(V)/CY7C09169(V) 8K/16K x 9 Synchronous DP SRAM CY7C131E / 136E / 144E CY7C131AE/ CY7C136AE 1K, 2K, 8K X 8 Asynchronous DP SRAM FOR ANY QUESTIONS ON THIS REPORT, PLEASE CONTACT [email protected] or via a CYLINK CRM CASE Prepared By: Josephine Pineda Reliability Engineer Reviewed By: Zhaomin Ji Reliability Manager Approved By: Richard Oshiro Reliability Director Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 1 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 PACKAGE/PRODUCT QUALIFICATION HISTORY QTP Number Description of Qualification Purpose Date 98064 7C1093H 1 MEG IN RAM4.2HD TECHNOLOGY Apr 1998 ND 98368 7C038 5V DPSRAM, R42HD IN FAB4 (2 ) Sep 1998 98244 7C026(1/4 me,5V) DUAL PORT SRAM (CHOP OF 7C038) Dec 1998 113405 52L PLCC and PQFP PACKAGE QUALIFICATION Feb 2012 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 2 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 PRODUCT DESCRIPTION (for qualification) Qualification Purpose: Qualifies Asynchronous/Synchronous DP SRAM (chop of CY7C038) and their options in R42HD technology w/ Hot Al in Fab 4. Marketing Part #: CY7C026 CY7C017 Device Description: 16K x 16 Asynchronous Dual Port Static RAM, R42HD Technology 32K x 9 Asynchronous Dual Port Static RAM, R42HD Technology Cypress Division: Cypress Semiconductor Corporation – Memory Product Division (MPD) TECHNOLOGY/FAB PROCESS DESCRIPTION Number of Metal Layers: 2 Metal Composition: Passivation Type and Thickness: Metal 1: 500Å TiW/6000Å Al -5%Cu/1200Å TiW Metal 2: 500Å TiW/8000Å Al -5%Cu/300Å TiW 7000Å SiO2 + 6000Å Si3N4 Generic Process Technology/Design Rule (µ-drawn): CMOS, Double Metal /0.42 um Gate Oxide Material/Thickness (MOS): SiO2 / 110Å Name/Location of Die Fab (prime) Facility: Cypress Semiconductor – Bloomington, MN Die Fab Line ID/Wafer Process ID: Fab4/R42HD PACKAGE AVAILABILITY PACKAGE ASSEMBLY FACILITY SITE 100-pin TQFP ASE, Taiwan (TAIWAN-G) 52, 68-pin PLCC Amkor, Manila (PHIL-M) 52-pin PQFP Amkor, Manila (PHIL-M) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 3 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION Lead Frame Material: 100-pin TQFP 68-pin PLCC Hitachi CEL 9200 (TQFP) Sumitomo EME 6300H (PLCC) Copper Alloy 194 Lead Finish, Composition / Thickness: Solder Plated, 90%Sn, 10%Pb Die Attach Supplier: Ablestik Die Attach Material: 8361H Wire Bond Method: Thermosonic Wire Material/Size: Gold / 1.0 mil Package Outline, Type, or Name: Mold Compound Name/Manufacturer: Name/Location of Assembly (prime) facility: MSL LEVEL ASE, Taiwan (TAIWAN-G) – TQFP Amkor, Manila (PHIL-M) – PLCC Level 3 (TQFP Package) Level 3 (PLCC, previously qualified) ELECTRICAL TEST / FINISH DESCRIPTION Test Location: KYEC Taiwan Note: Please contact a Cypress Representative for other package availability. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 4 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENTS Stress/Test Test Condition (Temp/Bias) High Temperature Operating Life Early Failure Rate Dynamic Operating Condition, Vcc = 6.5V, 125 C JESD22-A108 Pressure Cooker Test JESD22-A102: 121°C, 100%RH, 15 PSIG Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+Reflow, 260°C +0, -5°C MIL-STD-883, Method 1010, Condition C, -65°C to 150°C Precondition: JESD22 Moisture Sensitivity MSL 3 192 Hrs, 30°C /60%RH+Reflow, 260°C +0, -5°C 2200V JEDEC EIA/JESD22-A114 JESD22-C101 CY7C017, PLCC package, 1000V CY7C026, TQFP package, 500V CY7C131E / 136E / 144E, 500V JEDEC 17 CY7C017, PLCC package, 12V CY7C026, TQFP package, 9V 1100V JEDEC JS-001-2010 CY7C131E / 136E / 144E 140mA JEDEC 17 CY7C131E / 136E / 144E Temperature Cycle Electrostatic Discharge Human Body Model (ESD-HBM) Electrostatic Discharge Charge Device Model (ESD-CDM) Static Latch up Electrostatic Discharge Human Body Model (ESD-HBM) Static Latch up Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 5 of 11 Result P/F P P P P P P P P Document No. 001-76543 Rev. *B ECN #:4339025 RELIABILITY FAILURE RATE SUMMARY Stress/Test Device Tested/ Device Hours # Fails Activation Energy Thermal AF4 High Temperature Operating Life 1 Early Failure Rate 1523 0 N/A N/A High Temperature Operating Life 2,3 Long Term Failure Rate 791,500 DHRs 0 0.7 170 1 2 3 4 Failure Rate PPM 7 FIT 5 A production burn-in of 96 Hrs at 125°C, 6.5V is required for the product Assuming an ambient temperature of 55°C and a junction temperature rise of 15°C. Chi-squared 60% estimations used to calculate the failure rate. Thermal Acceleration Factor is calculated from the Arrhenius equation E 1 1 AF = exp A - k T 2 T1 where: EA =The Activation Energy of the defect mechanism. -5 K = Boltzmann’s constant = 8.62x10 eV/Kelvin. T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use conditions. 1 Long Term Failure Rate is based on R42HD technology, 1Meg SRAM qualification, QTP #98064 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 6 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 Reliability Test Data QTP #: 113405 1 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: ESD – CHARGE DEVICE MODEL (500V) CY7C136E 4011027 611139852 PHIL-M CY7C136E 4114103 611138551 PHIL-M CY7C131AE 4011027 611146860 PHIL-M CY7C131AE 4029830 611147100 PHIL-M CY7C144E 4035629 611135347 PHIL-M CY7C144E 4125206 611143231 PHIL-M COMP COMP COMP COMP COMP COMP 9 9 9 9 9 9 0 0 0 0 0 0 STRESS: ESD – HUMAN BODY MODEL (2200V) CY7C136E 4011027 611139852 PHIL-M CY7C136E 4114103 611138551 PHIL-M CY7C131AE 4011027 611146860 PHIL-M CY7C131AE 4029830 611147100 PHIL-M COMP COMP COMP COMP 8 8 8 8 0 0 0 0 STRESS: ESD – HUMAN BODY MODEL (1100V) CY7C144E 4035629 611135347 PHIL-M CY7C144E 4125206 611143231 PHIL-M COMP COMP 3 3 0 0 STRESS: STATIC LATCHUP (125C, 140mA) CY7C136E 4011027 611139852 CY7C136E 4114103 611138551 CY7C131AE 4011027 611146860 CY7C131AE 4029830 611147100 CY7C144E 4035629 611135347 CY7C144E 4125206 611143231 COMP COMP COMP COMP COMP COMP 6 6 6 6 6 6 0 0 0 0 0 0 PHIL-M PHIL-M PHIL-M PHIL-M PHIL-M PHIL-M 1 QTP 113405, Package qualification of 7N0160E die in 52 lead PLCC and 52 lead PQFP. Other qualification data can be found in document number 001-73334. Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 7 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 Reliability Test Data QTP #: 98244 Device Fab Lot # Assy Lot # Assy Loc Duration Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE – EARLY FAILURE RATE (125C, 6.5V) CY7C026-AC 4827620 619809368L2 TAIWN-G 48 476 0 CY7C026-AC 4827620 619809368L2 TAIWN-G 48 476 0 CY7C026-AC 4827620 619809368L2 TAIWN-G 48 56 0 STRESS: ESD – CHARGE DEVICE MODEL (500V) 7C026EC-GACB 4833177 619811293 TAIWN-G COMP 7C017EC-MJCB 4833177 619812371 PHIL-M COMP 3 3 0 0 STRESS: ESD – HUMAN BODY MODEL (2200V) 7C026EC-GACB 4833177 619811293 TAIWN-G COMP 7C017EC-MJCB 4833177 619812371 PHIL-M COMP 3 3 0 0 48 0 STRESS: PRESSURE COOKER TEST (121C, 100%RH) CY7C026-AC 4827620 619809368L2 TAIWN-G 168 STRESS: TC COND C, -65 TO 150C, PRECOND. 192 HRS 30C/60%RH (MSL3) CY7C026-AC 4827620 619809368L2 TAIWN-G 300 48 0 Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 8 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 Reliability Test Data QTP #: 98368 Device Fab Lot # Assy Lot # Assy Loc Duration 1 Samp Rej Failure Mechanism STRESS: HIGH TEMP DYNAMIC OPERATING LIFE – EARLY FAILURE RATE (150C, 5.75V) CY7C09389-AC 4818845 619806813 TAIWN-G 48 289 0 CY7C09389-AC 4821104 619808005 TAIWN-G 48 1234 0 STRESS: ESD – CHARGE DEVICE MODEL (1,000V) CY7C09389-AC 4818845 619806221 TAIWN-G COMP 3 0 STRESS: ESD – HUMAN BODY MODEL (1,100V) CY7C09389-AC 4818845 619806221 TAIWN-G COMP 3 0 44 0 STRESS: ESD – PRESSURE COOKER TEST (121C, 100%RH) CY7C09389-AC 4818845 619806221 TAIWN-G 168 STRESS: TC COND. C, -65 TO 165C, PRECOND. 192 HRS 30C/60%RH (MSL3) CY7C09389-AC 4818845 619806221 TAIWN-G 300 48 0 CY7C09389-AC 4818845 619806221 TAIWN-G 1000 48 0 1 QTP 98368, Asynchronous/Synchronous DP SRAM, R42HD Technology, Fab4 qualification Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 9 of 11 Document No. 001-76543 Rev. *B ECN #:4339025 Reliability Test Data QTP #: 98064 Device Fab Lot # Assy Lot # Assy Loc Duration 1 Samp Rej Failure Mechanism STRESS: ESD – CHARGE DEVICE MODEL (1000V) CY7C109-VC 4738602 519712560 INDNS-O COMP 3 0 STRESS: ESD – HUMAN BODY MODEL (2200V) CY7C109-VC 4738602 519712560 INDNS-O COMP 3 0 STRESS: HI-ACCEL SATURATION TEST (140C, 5.5V), PRECOND. 192 HRS 30C/60%RH CY7C109-VC 4738602 519712560 INDNS-O 128 46 0 CY7C109-VC 4738564 519712898 INDNS-O 128 46 0 CY7C109-VC 4738564 519712898 INDNS-O 256 46 0 CY7C109-VC 4739644 519714390 INDNS-O 128 46 0 STRESS: HIGH TEMPERATURE STORAGE (165C, NO BIAS) CY7C109-VC 4738602 519712560 INDNS-O 336 CY7C109-VC 4738602 519712560 INDNS-O 500 CY7C109-VC 4738602 519712560 INDNS-O 1000 46 46 46 0 0 0 STRESS: HIGH TEMP STEADY STATE LIFE (150C, 5.75V) CY7C109-VC 4738602 519712560 INDNS-O CY7C109-VC 4738602 519712560 INDNS-O CY7C109-VC 4739644 519714390 INDNS-O CY7C109-VC 4739644 519714390 INDNS-O 78 78 78 78 0 0 0 0 80 168 80 168 STRESS: HIGH TEMP DYNAMIC OPERATING LIFE – LATENT FAILURE RATE (150C, 5.75V) CY7C109-VC 4739644 519714390 INDNS-O 80 528 0 CY7C109-VC 4739644 519714390 INDNS-O 500 527 0 CY7C109-VC 4745042 519800651L1 INDNS-O 80 529 0 CY7C109-VC 4745042 519800651L1 INDNS-O 500 529 0 STRESS: EXTENDED DYNAMIC BURN-IN (150C, 5.75V) CY7C109-VC 4739644 519714390 INDNS-O 1000 527 0 STRESS: COLD LIFE TEST (-30C, 6.5V) CY7C109-VC 4738602 519712560 CY7C109-VC 4738602 519712560 500 1000 45 45 0 0 48 500 10 10 0 0 46 46 46 46 0 0 0 0 INDNS-O INDNS-O STRESS: READ & RECORD LIFE TEST (150C, 5.75V) CY7C109-VC 4738602 519712560 INDNS-O CY7C109-VC 4738602 519712560 INDNS-O STRESS: TC COND. C, -65 TO 150C, PRECOND. 192 HRS 30/60%RH CY7C109-VC 4738602 519712560 INDNS-O 300 CY7C109-VC 4738602 519712560 INDNS-O 1000 CY7C109-VC 4738564 519712898 INDNS-O 300 CY7C109-VC 4739644 519714390 INDNS-O 300 1 R42HD Technology qualification (1Meg SRAM) Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 10 of 11 Document No.001-76543 Rev. *B ECN #: 4339025 Document History Page Document Title: Document Number: Rev. ECN No. ** 3542946 *A 4039246 *B QTP#98244: CY7C026 AND CY7C017 DP SRAM AT FAB-4 CMI USING R42 TECHNOLOGY 001-76543 Orig. of Change FDW NSR 4339025 JYF Description of Change Initial Release Added CY7C131AE and CY7C136AE devices in the title page. Removed reference Cypress specs in reliability tests performed table. Removed Notes in document history page. Sunset review: Updated QTP title page; Deleted table numbering (Tables I to VIII); Added industry standard of HTOL and PCT in Reliability Tests Performed table for template alignment. Distribution: WEB Posting: WEB Company Confidential A printed copy of this document is considered uncontrolled. Refer to online copy for latest revision. Page 11 of 11