QTP 093901:CY8CLEDAC01 PPSOC FAMILY 0.35UM LOGIC 1P4M, UMC FAB8 QUALIFICATION REPORT

Document No.001-64763 Rev. *B
ECN # 4572570
Cypress Semiconductor
Product Qualification Report
QTP # 093901 VERSION*B
November 2014
PPSOC Family
0.35um Logic 1P4M, UMC Fab8
CY8CLEDAC01
AC/DC Digital Current-Mode Controller for LED Lighting
FOR ANY QUESTIONS ON THIS REPORT, PLEAE CONTACT
[email protected] or via a CYLINK CRM CASE
Prepared By:
Honesto Sintos
Reliability Engineer
Reviewed By:
Rene Rodgers
Reliability Manager
Approved By:
Richard Oshiro
Reliability Director
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Page 1 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
PRODUCT QUALIFICATION HISTORY
Qual
Report
093901
Description of Qualification Purpose
Qualify CY8CLEDAC01 PPSOC AC/DC Digital Current-Mode Controller
Company Confidential
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Page 2 of 11
Date
Comp
Aug 10
Document No.001-64763 Rev. *B
ECN # 4572570
PRODUCT DESCRIPTION (for qualification)
Purpose: Qualify CY8CLEDAC01 PPSOC AC/DC Digital Current-Mode Controller
Marketing Part #:
CY8CLEDAC01
Device Description: AC/DC Digital Current-Mode Controller For LED Lighting
Cypress Semiconductor Corporation –DCD PPSOC
Cypress Division:
TECHNOLOGY/FAB PROCESS DESCRIPTION
Number of Metal Layers:
4
Metal
Constituents: Al/Cu: 99.5%: 0.5%
Composition: Thickness: inter metal: 500, top metal: 800(nm)
Width: M1: 0.5, M2: 0.55, M3: 0.55, M4: 0.6
(MIN. rule) (μm)
Min Spacing: M1: 0.45, M2: 0.5, M3: 0.5,
M4: 0.6 (μm)
SiO2+SiN
Passivation Type and Materials:
Generic Process Technology/Design Rule (-drawn):
0.35 um Embedded High Voltage 3.3 V/18.0 V 2P5M P-Sub
Polycide Gox65/465 Shrink Process Design Support Manual
Gate Oxide Material/Thickness (MOS):
SiO2/ 3.3V/18V: 6.5/46.5(nm)
Name/Location of Die Fab (prime) Facility:
UMC; Fab8 AB
Die Fab Line ID/Wafer Process ID:
UMC; Fab8 AB
PACKAGE AVAILABILITY
PACKAGE
8L SOIC
ASSEMBLY SITE FACILITY
ASE-Shanghai
Note: Package Qualification details upon request
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Page 3 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
MAJOR PACKAGE INFORMATION USED IN THIS QUALIFICATION
Package Designation:
SA815
Package Outline, Type, or Name:
8L-Small Outline Integrated Circuit (SOIC)
Mold Compound Name/Manufacturer:
Hitachi CEL-9240HF
Mold Compound Flammability Rating:
UL-94-V0
Mold Compound Alpha Emission Rate:
N/A
Oxygen Rating Index:
45%
Lead Frame Material:
C194 Copper
Lead Finish, Composition / Thickness:
99.99% Tin
Die Backside Preparation Method/Metallization:
Wafer Backgrind
Die Separation Method:
Wafer Saw
Die Attach Supplier:
Hitachi
Die Attach Material:
EN4900
Die Attach Method:
Epoxy
Bond Diagram Designation:
67IWAS0008T01-O
Wire Bond Method:
Thermo-Compression
Wire Material/Size:
99.99Au, 0.9mil
Thermal Resistance Theta JA °C/W:
160°C/W
Package Cross Section Yes/No:
No
Name/Location of Assembly (prime) facility:
ASE-Shanghai
MSL Level:
3
Reflow Profile:
260C
ELECTRICAL TEST / FINISH DESCRIPTION
Test Location:
ASE-Shanghai
Note: Please contact a Cypress Representative for other packages availability
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Page 4 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
RELIABILITY TESTS PERFORMED PER SPECIFICATION REQUIREMENT
Stress/Test
Test Condition
(Temp/Bias)
Result
P/F
High Temperature Operating Life
Early Failure Rate
Dynamic Operating Condition, Vcc Max = 16V, 125C
P
High Temperature Operating Life
Latent Failure Rate
Dynamic Operating Condition, Vcc Max=16V, 100C / 125C
P
MIL-STD-883C, Method 1010, Condition C, -65°C to -+ 150°C
Precondition: JESD22 Moisture Sensitivity MSL3
192 Hrs 30°C/60%RH + 3IR-Reflow, 260°C+0, -5°C
Precondition: JESD22 Moisture Sensitivity MSL1
Temperature Cycle
Highly Accelerated Saturation Test
(HAST)
168 Hrs 85°C/85%RH + 3IR-Reflow, 260°C+0, -5°C
130°C, 3.0V / 15.0V, 85%RH
Precondition: JESD22 Moisture Sensitivity MSL 3
P
P
192 Hrs, 30C/60%RH + 3IR-Reflow, 260°C+0, -5°C
High Temperature Storage
150C, no bias
P
Electrostatic Discharge
Human Body Model (ESD-HBM)
2200V
JEDEC EIA/JESD22-A114-E
P
Electrostatic Discharge
Charge Device Model (ESD-CDM)
500V
JESD22-C101
P
Static Operating Condition, Vcc = 16V, Temp = -45 C
Low Temperature Operating Life
P
JESD22-A108
Pressure Cooker
121°C, 100%RH, 15 Psig
Precondition: JESD22 Moisture Sensitivity Level 3
192 Hrs 30°C/60%RH+3IR-Reflow, 260°C+0, -5°C
Precondition: JESD22 Moisture Sensitivity Level 1
168 Hrs 85°C/85%RH+3IR-Reflow, 260°C+0, -5°C
Acoustic Microscopy Test
J-STD-020
P
Constructional Analysis
Meet external and internal characteristics of
Cypress package
P
P
200C, 4HRS
Age Bond Strength
Static Latch up
P
MIL-STD-883, Method 883-2011
125C,  100mA
JESD78B
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Page 5 of 11
P
Document No.001-64763 Rev. *B
ECN # 4572570
RELIABILITY FAILURE RATE SUMMARY
Stress/Test
High Temperature Operating Life Early
Device Tested/
Device Hours
#
Fails
Activation
Energy
Thermal
AF3
Failure Rate
3, 014 Devices
0
N/A
N/A
0 PPM
1,816,392 DHRs
1
0.7
170
23 FIT
Failure Rate
High Temperature Operating Life1,2
Long Term Failure Rate
1
Assuming an ambient temperature of 55C and a junction temperature rise of 15C.
Chi-squared 60% estimations used to calculate the failure rate..
3
Thermal Acceleration Factor is calculated from the Arrhenius equation
2
E  1 1  
AF = exp  A  -  
 k  T 2 T1  
where:
EA =The Activation Energy of the defect mechanism.
k = Boltzmann's constant = 8.62x10-5 eV/Kelvin.
T1 is the junction temperature of the device under stress and T2 is the junction temperature of the device at use
conditions.
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Page 6 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
Reliability Test Data
QTP #:
Device
Fab Lot #
093901
Assy Lot #
Assy Loc
Duration
Samp
Rej
iW1690
SHANGHAI-AE
COMP
23
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COMP
22
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
MALAYSIA-AT
COMP
32
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
COMP
15
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
COMP
3
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS4T7
SHANGHAI-AE
COMP
3
0
CY8CLEDAC01 (8CLEDAC01A) N/A
800900840
SHANGHAI-AE
COMP
3
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COMP
5
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
COMP
5
0
Failure Mechanism
STRESS: ACOUSTIC/M1
CY8CLEDAC01 (8CLEDAC01A) N/A
STRESS: ACOUSTIC/M3
STRESS: AGE BOND STRENGTH
STRESS: CONSTRUCTIONAL ANALYSIS
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-EARLY FAILURE RATE, 125C, 16V, Vcc Core
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1690
SHANGHAI-AE
48
190
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1691A
SHANGHAI-AE
48
194
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1691A
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1696A
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1696A
SHANGHAI-AE
48
195
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1698A
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1691B
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
INDONESIA-AT
48
672
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW2202
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW2202
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW2210
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1688
SHANGHAI-AE
48
196
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1688
SHANGHAI-AE
48
195
0
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Page 7 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
093901
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: ESD-CHARGE DEVICE MODEL, 1000V
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COM
10
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COM
10
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
COMP
15
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS4T7
SHANGHAI-AE
COMP
15
0
STRESS: ESD-HUMAN BODY CIRCUIT PER JEDEC EIA/JESD22-A114-E, 2200V
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COM
21
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COM
21
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
COMP
21
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS4T7
SHANGHAI-AE
COMP
21
0
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 3.0V PRE COND 192 HR 30C/60%RH, MSL3
CY8CLEDAC01 (8CLEDAC01A) N/A
M5P65
SHANGHAI-AE
96
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
M7A84
SHANGHAI-AE
96
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
M6L83
INDONESIA-AT
96
77
0
STRESS: HI-ACCEL SATURATION TEST, 130C, 85%RH, 15.0V PRE COND 192 HR 30C/60%RH, MSL3
CY8CLEDAC01 (8CLEDAC01A) N/A
800900840
SHANGHAI-AE
128
80
0
STRESS: HIGH TEMPERATURE STORAGE, 150C
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
1000
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1690
SHANGHAI-AE
1000
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
INDONESIA-AT
1000
32
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
500
80
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
1000
80
0
INDONESIA-AT
1000
45
0
STRESS: LOW TEMPERATURE OPERATING LIFE
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
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Page 8 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
Reliability Test Data
QTP #:
Device
Fab Lot #
Assy Lot #
093901
Assy Loc
Duration
Samp
Rej
Failure Mechanism
STRESS: HIGH TEMP DYNAMIC OPERATING LIFE-LATENT FAILURE RATE, 100C/ 125C, 16V, Vcc Core
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1692B
SHANGHAI-AE
100
30
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1692B
SHANGHAI-AE
168
210
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1690
SHANGHAI-AE
1008
176
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1691A
SHANGHAI-AE
1008
164
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1691A
SHANGHAI-AE
1008
100
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1696A
SHANGHAI-AE
1008
176
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1696A
SHANGHAI-AE
1008
100
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1698A
SHANGHAI-AE
1008
175
1
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1691B
SHANGHAI-AE
1008
166
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
INDONESIA-AT
1008
200
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW2202
SHANGHAI-AE
1008
71
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW2202
SHANGHAI-AE
1008
80
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW2210
SHANGHAI-AE
1008
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1688
SHANGHAI-AE
1008
197
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1688
SHANGHAI-AE
1008
80
0
Functional: (Failed Startup_Cur_Vcc)
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 168HRS 85C/85%RH, MSL1
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1690
SHANGHAI-AE
168
77
0
STRESS: PRESSURE COOKER TEST (121C, 100%RH), PRE COND 192HRS 30C/60%RH, MSL3
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
168
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
MALAYSIA-AT
168
32
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
168
80
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
288
80
0
STRESS: STATIC LATCH-UP TESTING, 125C, +/-100mA
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
COMP
10
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
COMP
10
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS4T7
SHANGHAI-AE
COMP
10
0
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Page 9 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
Reliability Test Data
QTP #:
Device
Fab Lot #
093901
Assy Lot #
Assy Loc
800900840
SHANGHAI-AE
Duration
Samp
Rej
Failure Mechanism
STRESS: CROSS SECTION
CY8CLEDAC01 (8CLEDAC01A) N/A
COMP
2
0
500
77
0
STRESS: TC COND. C -40C TO 125C, PRE COND 168 HRS 85C/85%RH, MSL1
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1690
SHANGHAI-AE
STRESS: TC COND. C -40C TO 125C, PRE COND 192 HRS 30C/60%RH, MSL3
CY8CLEDAC01 (8CLEDAC01A) N/A
iW3620
SHANGHAI-AE
500
77
0
CY8CLEDAC01 (8CLEDAC01A) N/A
iW1689
INDONESIA-AT
500
32
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
500
80
0
CY8CLEDAC01 (8CLEDAC01A) N/A
MS497
SHANGHAI-AE
1000
79
0
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Page 10 of 11
Document No.001-64763 Rev. *B
ECN # 4572570
Document History Page
Document Title:
Report
Document Number:
Rev. ECN
No.
**
3064555
*A
4186190
*B
QTP 093901: CY8CLEDAC01 PPSOC Family 0.35um Logic 1P4M, UMC Fab8 Qualification
001-64763
Orig. of
Change
NRG
HSTO
4572570 HSTO
Description of Change
Initial spec release
Sunset Review
Removed “Version 1.0” in front page.
Removed reference Cypress spec (25-00020 , 25-00089, 25-00104,
25-20035, & . 01-00081) in the reliability test performed table and
replaced reference Industry standard
Align qualification report based on the new template in the front page
Distribution: WEB
Posting:
None
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Page 11 of 11