VISHAY SUB75P03-07

SUP/SUB75P03-07
Vishay Siliconix
P-Channel 30-V (D-S) 175C MOSFET
rDS(on) ()
ID (A)a
0.007 @ VGS = –10 V
75
0.010 @ VGS = –4.5 V
75
VDS (V)
–30
S
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
D
SUB75P03-07
Top View
P-Channel MOSFET
SUP75P03-07
Parameter
Gate-Source Voltage
TC = 25C
Continuous Drain Current
(TJ = 175C)
TC = 125C
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energyb
Power Dissipation
L = 0.1 mH
TC = 25C (TO-220AB and TO-263)
TA = 25C (TO-263)c
Symbol
Limit
Unit
VGS
20
V
–75a
ID
–65
A
IDM
–240
IAR
–60
EAR
180
mJ
187d
PD
W
3.75
TJ, Tstg
–55 to 175
C
Symbol
Limit
Unit
PCB Mount (TO-263)c
RthJA
40
Free Air (TO-220AB)
RthJA
62.5
RthJC
0.8
Operating Junction and Storage Temperature Range
Parameter
Junction-to-Ambient
Junction-to-Case
C/W
Notes:
a. Package limited.
b. Duty cycle 1%.
c. When mounted on 1” square PCB (FR-4 material).
d. See SOA curve for voltage derating.
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
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SUP/SUB75P03-07
Vishay Siliconix
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = –250 mA
–30
VGS(th)
VDS = VGS, ID = –250 mA
–1
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = –30 V, VGS = 0 V
–1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = –30 V, VGS = 0 V, TJ = 125C
–50
On-State Drain Currenta
ID(on)
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
–3
"100
VDS = –30 V, VGS = 0 V, TJ = 175C
VDS = –5 V, VGS = –10 V
rDS(on)
Forward
gfs
A
0.0055
0.007
VGS = –10 V, ID = –30 A, TJ = 125C
0.010
VGS = –10 V, ID = –30 A, TJ = 175C
0.013
VGS = –4.5 V, ID = –20 A
Transconductancea
VDS = –15 V, ID = –75 A
mA
A
–250
–120
VGS = –10 V, ID = –30 A
a
D i S
O S
R i
Drain-Source
On-State
Resistance
nA
0.008
0.010
20
W
W
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
Reversen Transfer Capacitance
Crss
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
9000
VGS = 0 V,
V VDS = –25
25 V
V, f = 1 MHz
MH
pF
F
1565
715
160
VDS = –15
15 V
V, VGS = –10
10 V,
V ID = –75
75 A
240
nC
C
32
Gate-Drain Chargec
Qgd
Turn-On Delay Timec
td(on)
25
40
tr
VDD = –15 V,, RL = 0.2 W
225
360
td(off)
ID ] –75 A, VGEN = –10 V, RG = 2.5 W
150
240
210
340
Rise Timec
Turn-Off Delay Timec
Fall Timec
30
tf
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)b
Continuous Current
Is
–75
Pulsed Current
ISM
–240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = –75 A, VGS = 0 V
trr
IRM(REC)
Qrr
IF = –75
75 A,
A di/dt
di/d = 100 A/ms
A/
–1.2
–1.5
V
55
100
ns
2.5
5
A
0.07
0.25
mC
Notes:
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 71109
S-00821—Rev. B, 24-Apr-00
SUP/SUB75P03-07
Vishay Siliconix
Output Characteristics
Transfer Characteristics
250
200
TC = –55C
VGS = 10 thru 6 V
25C
160
I D – Drain Current (A)
I D – Drain Current (A)
200
5V
150
100
4V
50
120
125C
80
40
3V
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
150
0.030
TC = –55C
0.025
r DS(on)– On-Resistance ( )
g fs – Transconductance (S)
120
25C
125C
90
60
30
0
0.020
0.015
VGS = 4.5 V
0.010
VGS = 10 V
0.005
0
0
20
40
60
80
100
0
20
40
ID – Drain Current (A)
80
100
120
250
300
ID – Drain Current (A)
Capacitance
Gate Charge
20
10000
V GS – Gate-to-Source Voltage (V)
12000
C – Capacitance (pF)
60
Ciss
8000
6000
4000
Coss
2000
Crss
0
0
VDS = 15 V
ID = 75 A
16
12
8
4
0
6
12
18
24
VDS – Drain-to-Source Voltage (V)
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
30
0
50
100
150
200
Qg – Total Gate Charge (nC)
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SUP/SUB75P03-07
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
1.8
VGS = 10 V
ID = 30 A
TJ = 150C
I S – Source Current (A)
r DS(on) – On-Resistance ( W )
(Normalized)
1.5
100
1.2
0.9
0.6
10
TJ = 25C
0.3
0
–50
1
–25
0
25
50
75
100
125
150
0
175
0.2
TJ – Junction Temperature (C)
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Drain Source Breakdown vs.
Junction Temperature
Avalanche Current vs. Time
1000
45
ID = 250 mA
V(BR)DSS (V)
I Dav (a)
40
IAV (A) @ TA = 25C
100
10
35
IAV (A) @ TA = 150C
30
1
0.1
0.00001
0.0001
0.001
0.01
tin (Sec)
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0.1
1
25
–50
–25
0
25
50
75
100
125
150
175
TJ – Junction Temperature (C)
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
SUP/SUB75P03-07
Vishay Siliconix
Maximum Avalanche and Drain Current
vs. Case Temperature
1000
90
Safe Operating Area
10 ms
75
I D – Drain Current (A)
I D – Drain Current (A)
100
60
45
30
100 ms
10
1 ms
10 ms
100 ms
dc
1
15
0
Limited
by rDS(on)
TC = 25C
Single Pulse
0.1
0
25
50
75
100
125
150
175
0.1
1
10
100
VDS – Drain-to-Source Voltage (V)
TC – Case Temperature (C)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
Square Wave Pulse Duration (sec)
Document Number: 71109
S-00821—Rev. B, 24-Apr-00
www.vishay.com FaxBack 408-970-5600
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