SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V (D-S) 175C MOSFET rDS(on) () ID (A)a 0.007 @ VGS = –10 V 75 0.010 @ VGS = –4.5 V 75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View P-Channel MOSFET SUP75P03-07 Parameter Gate-Source Voltage TC = 25C Continuous Drain Current (TJ = 175C) TC = 125C Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation L = 0.1 mH TC = 25C (TO-220AB and TO-263) TA = 25C (TO-263)c Symbol Limit Unit VGS 20 V –75a ID –65 A IDM –240 IAR –60 EAR 180 mJ 187d PD W 3.75 TJ, Tstg –55 to 175 C Symbol Limit Unit PCB Mount (TO-263)c RthJA 40 Free Air (TO-220AB) RthJA 62.5 RthJC 0.8 Operating Junction and Storage Temperature Range Parameter Junction-to-Ambient Junction-to-Case C/W Notes: a. Package limited. b. Duty cycle 1%. c. When mounted on 1” square PCB (FR-4 material). d. See SOA curve for voltage derating. Document Number: 71109 S-00821—Rev. B, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB75P03-07 Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = –250 mA –30 VGS(th) VDS = VGS, ID = –250 mA –1 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = –30 V, VGS = 0 V –1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = –30 V, VGS = 0 V, TJ = 125C –50 On-State Drain Currenta ID(on) Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V –3 "100 VDS = –30 V, VGS = 0 V, TJ = 175C VDS = –5 V, VGS = –10 V rDS(on) Forward gfs A 0.0055 0.007 VGS = –10 V, ID = –30 A, TJ = 125C 0.010 VGS = –10 V, ID = –30 A, TJ = 175C 0.013 VGS = –4.5 V, ID = –20 A Transconductancea VDS = –15 V, ID = –75 A mA A –250 –120 VGS = –10 V, ID = –30 A a D i S O S R i Drain-Source On-State Resistance nA 0.008 0.010 20 W W S Dynamicb Input Capacitance Ciss Output Capacitance Coss Reversen Transfer Capacitance Crss Total Gate Chargec Qg Gate-Source Chargec Qgs 9000 VGS = 0 V, V VDS = –25 25 V V, f = 1 MHz MH pF F 1565 715 160 VDS = –15 15 V V, VGS = –10 10 V, V ID = –75 75 A 240 nC C 32 Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) 25 40 tr VDD = –15 V,, RL = 0.2 W 225 360 td(off) ID ] –75 A, VGEN = –10 V, RG = 2.5 W 150 240 210 340 Rise Timec Turn-Off Delay Timec Fall Timec 30 tf ns Source-Drain Diode Ratings and Characteristics (TC = 25C)b Continuous Current Is –75 Pulsed Current ISM –240 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = –75 A, VGS = 0 V trr IRM(REC) Qrr IF = –75 75 A, A di/dt di/d = 100 A/ms A/ –1.2 –1.5 V 55 100 ns 2.5 5 A 0.07 0.25 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71109 S-00821—Rev. B, 24-Apr-00 SUP/SUB75P03-07 Vishay Siliconix Output Characteristics Transfer Characteristics 250 200 TC = –55C VGS = 10 thru 6 V 25C 160 I D – Drain Current (A) I D – Drain Current (A) 200 5V 150 100 4V 50 120 125C 80 40 3V 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 150 0.030 TC = –55C 0.025 r DS(on)– On-Resistance ( ) g fs – Transconductance (S) 120 25C 125C 90 60 30 0 0.020 0.015 VGS = 4.5 V 0.010 VGS = 10 V 0.005 0 0 20 40 60 80 100 0 20 40 ID – Drain Current (A) 80 100 120 250 300 ID – Drain Current (A) Capacitance Gate Charge 20 10000 V GS – Gate-to-Source Voltage (V) 12000 C – Capacitance (pF) 60 Ciss 8000 6000 4000 Coss 2000 Crss 0 0 VDS = 15 V ID = 75 A 16 12 8 4 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 71109 S-00821—Rev. B, 24-Apr-00 30 0 50 100 150 200 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB75P03-07 Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 VGS = 10 V ID = 30 A TJ = 150C I S – Source Current (A) r DS(on) – On-Resistance ( W ) (Normalized) 1.5 100 1.2 0.9 0.6 10 TJ = 25C 0.3 0 –50 1 –25 0 25 50 75 100 125 150 0 175 0.2 TJ – Junction Temperature (C) 0.4 0.6 0.8 1.0 VSD – Source-to-Drain Voltage (V) Drain Source Breakdown vs. Junction Temperature Avalanche Current vs. Time 1000 45 ID = 250 mA V(BR)DSS (V) I Dav (a) 40 IAV (A) @ TA = 25C 100 10 35 IAV (A) @ TA = 150C 30 1 0.1 0.00001 0.0001 0.001 0.01 tin (Sec) www.vishay.com FaxBack 408-970-5600 2-4 0.1 1 25 –50 –25 0 25 50 75 100 125 150 175 TJ – Junction Temperature (C) Document Number: 71109 S-00821—Rev. B, 24-Apr-00 SUP/SUB75P03-07 Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 1000 90 Safe Operating Area 10 ms 75 I D – Drain Current (A) I D – Drain Current (A) 100 60 45 30 100 ms 10 1 ms 10 ms 100 ms dc 1 15 0 Limited by rDS(on) TC = 25C Single Pulse 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 Square Wave Pulse Duration (sec) Document Number: 71109 S-00821—Rev. B, 24-Apr-00 www.vishay.com FaxBack 408-970-5600 2-5