VISHAY SUD15N06

SUD15N06-90L
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
VDS (V)
60
rDS(on) ()
ID (A)
0.065 @ VGS = 10 V
15
0.090 @ VGS = 4.5 V
14
D
TO-252
G
Drain Connected to Tab
G
D
S
S
Top View
N-Channel MOSFET
Order Number:
SUD15N06-90L
Parameter
Gate-Source Voltage
Continuous Drain Current (TJ = 175C)
175 C)
TC = 25C
TC = 100C
Pulsed Drain Current
Symbol
Limit
Unit
VGS
20
V
15
ID
12
IDM
30
Continuous Source Current (Diode Conduction)
IS
15
Avalanche Current
IAR
15
Repetitive Avalanche Energy (Duty Cycle 1%)
L = 0.1 mH
TC = 25C
Maximum Power Dissipation
TA = 25C
Operating Junction and Storage Temperature Range
EAR
A
11
mJ
37
PD
W
2a
TJ, Tstg
C
–55 to 175
Parameter
Symbol
Typical
Maximum
Junction-to-Ambient Free Air, FR4 Board Mounta
RthJA
60
70
Junction-to-Case
RthJC
3.7
4.0
Unit
C/W
Notes:
a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board.
Document Number: 71087
S-49634—Rev. D, 20-Sep-99
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SUD15N06-90L
Vishay Siliconix
Parameter
Typa
Max
2.0
3.0
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125C
50
VDS = 60 V, VGS = 0 V, TJ = 175C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Currentb
ID(on)
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 10 A
b
D i Source
Drain
S
On
O State
S
R i
Drain-Source
On-State
Resistance
Forward Transconductanceb
rDS(on)
DS( )
gfs
V
"100
nA
mA
A
A
15
0.050
0.065
VGS = 10 V, ID = 10 A, TJ = 125C
0.12
VGS = 10 V, ID = 10 A, TJ = 175C
0.15
VGS = 4.5 V, ID = 5 A
0.065
VDS = 15 V, ID = 10 A
11
W
0.090
S
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
524
Reverse Transfer Capacitance
Crss
28
Total Gate Chargec
Qg
12
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
98
20
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
3.5
Turn-On Delay Timec
td(on)
7
20
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
VDS = 30 V
V, VGS = 10 V
V, ID = 15 A
VDD = 30 V
V,, RL = 2 W
ID ^ 15 A,
A VGEN = 10 V
V, RG = 2
2.5
5W
tf
nC
C
2
8
25
15
40
7
20
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)
Pulsed Current
ISM
30
A
Diode Forward Voltage
VSD
IF = 15 A, VGS = 0 V
0.9
1.2
V
Reverse Recovery Time
trr
IF = 15 A, di/dt = 100 A/ms
29
60
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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Document Number: 71087
S-49634—Rev. D, 20-Sep-99
SUD15N06-90L
Vishay Siliconix
Output Characteristics
Transfer Characteristics
50
20
VGS = 10 thru 6 V
16
5V
I D – Drain Current (A)
I D – Drain Current (A)
40
30
4V
20
10
12
8
TC = 125C
4
3V
25C
–55C
0
0
0
2
4
6
8
10
0
1
VDS – Drain-to-Source Voltage (V)
Transconductance
4
5
On-Resistance vs. Drain Current
0.10
TC = –55C
0.08
r DS(on)– On-Resistance ( )
20
25C
15
125C
10
5
0
VGS = 4.5 V
0.06
VGS = 10 V
0.04
0.02
0
0
4
8
12
16
20
0
4
8
ID – Drain Current (A)
12
16
20
ID – Drain Current (A)
Capacitance
Gate Charge
20
V GS – Gate-to-Source Voltage (V)
1000
800
C – Capacitance (pF)
3
VGS – Gate-to-Source Voltage (V)
25
g fs – Transconductance (S)
2
600
Ciss
400
200
Coss
Crss
0
VDS = 30 V
ID = 15 A
16
12
8
4
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 71087
S-49634—Rev. D, 20-Sep-99
60
0
4
8
12
16
20
24
Qg – Total Gate Charge (nC)
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SUD15N06-90L
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
VGS = 10 V
ID = 10 A
I S – Source Current (A)
r DS(on)– On-Resistance ( W )
(Normalized)
2.0
1.5
1.0
TJ = 150C
10
TJ = 25C
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0
0.3
TJ – Junction Temperature (C)
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
Drain Current vs. Case Temperature
Safe Operating Area
50
20
10 ms
100 ms
10
I D – Drain Current (A)
I D – Drain Current (A)
16
12
8
Limited
by rDS(on)
1 ms
1
10 ms
100 ms
dc
TC = 25C
Single Pulse
4
0
0
25
50
75
100
125
150
0.1
175
0.1
1
TC – Case Temperature (C)
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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Document Number: 71087
S-49634—Rev. D, 20-Sep-99