SUD15N06-90L Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET, Logic Level VDS (V) 60 rDS(on) () ID (A) 0.065 @ VGS = 10 V 15 0.090 @ VGS = 4.5 V 14 D TO-252 G Drain Connected to Tab G D S S Top View N-Channel MOSFET Order Number: SUD15N06-90L Parameter Gate-Source Voltage Continuous Drain Current (TJ = 175C) 175 C) TC = 25C TC = 100C Pulsed Drain Current Symbol Limit Unit VGS 20 V 15 ID 12 IDM 30 Continuous Source Current (Diode Conduction) IS 15 Avalanche Current IAR 15 Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range EAR A 11 mJ 37 PD W 2a TJ, Tstg C –55 to 175 Parameter Symbol Typical Maximum Junction-to-Ambient Free Air, FR4 Board Mounta RthJA 60 70 Junction-to-Case RthJC 3.7 4.0 Unit C/W Notes: a. 1.36 x 2.1 surface mounted on 1” x 1” FR4 Board. Document Number: 71087 S-49634—Rev. D, 20-Sep-99 www.vishay.com FaxBack 408-970-5600 2-1 SUD15N06-90L Vishay Siliconix Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 VDS = 60 V, VGS = 0 V, TJ = 175C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 10 A b D i Source Drain S On O State S R i Drain-Source On-State Resistance Forward Transconductanceb rDS(on) DS( ) gfs V "100 nA mA A A 15 0.050 0.065 VGS = 10 V, ID = 10 A, TJ = 125C 0.12 VGS = 10 V, ID = 10 A, TJ = 175C 0.15 VGS = 4.5 V, ID = 5 A 0.065 VDS = 15 V, ID = 10 A 11 W 0.090 S Dynamic Input Capacitance Ciss Output Capacitance Coss 524 Reverse Transfer Capacitance Crss 28 Total Gate Chargec Qg 12 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 98 20 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 3.5 Turn-On Delay Timec td(on) 7 20 Rise Timec Turn-Off Delay Timec Fall Timec tr td(off) VDS = 30 V V, VGS = 10 V V, ID = 15 A VDD = 30 V V,, RL = 2 W ID ^ 15 A, A VGEN = 10 V V, RG = 2 2.5 5W tf nC C 2 8 25 15 40 7 20 ns Source-Drain Diode Ratings and Characteristics (TC = 25C) Pulsed Current ISM 30 A Diode Forward Voltage VSD IF = 15 A, VGS = 0 V 0.9 1.2 V Reverse Recovery Time trr IF = 15 A, di/dt = 100 A/ms 29 60 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 71087 S-49634—Rev. D, 20-Sep-99 SUD15N06-90L Vishay Siliconix Output Characteristics Transfer Characteristics 50 20 VGS = 10 thru 6 V 16 5V I D – Drain Current (A) I D – Drain Current (A) 40 30 4V 20 10 12 8 TC = 125C 4 3V 25C –55C 0 0 0 2 4 6 8 10 0 1 VDS – Drain-to-Source Voltage (V) Transconductance 4 5 On-Resistance vs. Drain Current 0.10 TC = –55C 0.08 r DS(on)– On-Resistance ( ) 20 25C 15 125C 10 5 0 VGS = 4.5 V 0.06 VGS = 10 V 0.04 0.02 0 0 4 8 12 16 20 0 4 8 ID – Drain Current (A) 12 16 20 ID – Drain Current (A) Capacitance Gate Charge 20 V GS – Gate-to-Source Voltage (V) 1000 800 C – Capacitance (pF) 3 VGS – Gate-to-Source Voltage (V) 25 g fs – Transconductance (S) 2 600 Ciss 400 200 Coss Crss 0 VDS = 30 V ID = 15 A 16 12 8 4 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 71087 S-49634—Rev. D, 20-Sep-99 60 0 4 8 12 16 20 24 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUD15N06-90L Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 VGS = 10 V ID = 10 A I S – Source Current (A) r DS(on)– On-Resistance ( W ) (Normalized) 2.0 1.5 1.0 TJ = 150C 10 TJ = 25C 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 VSD – Source-to-Drain Voltage (V) Drain Current vs. Case Temperature Safe Operating Area 50 20 10 ms 100 ms 10 I D – Drain Current (A) I D – Drain Current (A) 16 12 8 Limited by rDS(on) 1 ms 1 10 ms 100 ms dc TC = 25C Single Pulse 4 0 0 25 50 75 100 125 150 0.1 175 0.1 1 TC – Case Temperature (C) 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 71087 S-49634—Rev. D, 20-Sep-99