SUD30N03-30 Vishay Siliconix N-Channel 30-V (D-S), 175C MOSFET VDS (V) 30 rDS(on) () ID (A) 0.030 @ VGS = 10 V 30 0.045 @ VGS = 4.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number: SUD30N03-30 S N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 30 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) ID TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction) TC = 25C Maximum Power Dissipation Operating Junction and Storage Temperature Range V 30 21 IDM 40 IS 30 PD TA = 25C Unit 50 3a A W TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter Maximum Junction-to-Ambient RthJA 50 Maximum Junction-to-Case RthJC 3.0 C/W Notes a. Surface Mounted on 4” x 4” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70268 S-57253—Rev. D, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 SUD30N03-30 Vishay Siliconix Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS(th) VDS = VGS, ID = 250 mA 1.0 IGSS VDS = 0 V, VGS = "20 V "100 VDS = 30 V, VGS = 0 V 1 VDS = 30 V, VGS = 0 V, TJ = 125C 50 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Z G V l D i Current C IDSS On-State Drain Currentb ID(on) V VDS = 30 V, VGS = 0 V, TJ = 175C b D i S O S R i Drain-Source On-State Resistance rDS(on) VDS = 5 V, VGS = 10 V gfs A VGS = 10 V, ID = 15 A 0.020 0.030 VGS = 10 V, ID = 15 A, TJ = 125C 0.033 0.050 VGS = 10 V, ID = 15 A, TJ = 175C 0.036 0.054 0.030 0.045 VDS = 15 V, ID = 15 A mA A 150 30 VGS = 4.5 V, ID = 12.5 A Forward Transconductanceb nA 10 22 W S Dynamica Input Capacitance Ciss 1170 VGS = 0 V, VDS = 25 V, f = 1 MHz Output Capacitance Coss Reverse Transfer Capacitance Crss 60 Total Gate Chargec Qg 18 pF F 320 35 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 2 Turn-On Delay Timec td(on) 10 20 10 20 25 40 15 30 Rise Timec tr Turn-Off Delay Timec Fall Timec td(off) VDS = 15 V, V, ID = 30 A V VGS = 10 V VDD = 15 V V,, RL = 0 0.5 5W A VGEN = 10 V 5W ID ^ 30 A, V, RG = 7 7.5 tf nC C 5.5 ns Source-Drain Diode Ratings and Characteristic (TC = 25C) Pulsed Current ISM 40 A Voltageb VSD IF = 30 A, VGS = 0 V 1.1 1.5 V Source-Drain Reverse Recovery Time trr IF = 30 A, di/dt = 100 A/ms 50 100 ns Diode Forward Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70268 S-57253—Rev. D, 24-Feb-98 SUD30N03-30 Vishay Siliconix Output Characteristics Transfer Characteristics 40 40 VGS = 10, 9, 8, 7, 6, 5 V 32 I D – Drain Current (A) I D – Drain Current (A) 32 24 4V 16 8 24 16 TC = 150C 8 25C –55C 3V 0 0 0 1 2 3 4 5 0 1 VDS – Drain-to-Source Voltage (V) 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.07 30 TC = –55C 18 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 0.06 25C 24 125C 12 6 0 0.05 0.04 VGS = 4.5 V 0.03 VGS = 10 V 0.02 0.01 0 0 8 16 24 32 0 40 8 16 ID – Drain Current (A) 32 40 ID – Drain Current (A) Capacitance Gate Charge 1500 10 V GS – Gate-to-Source Voltage (V) Ciss 1200 C – Capacitance (pF) 24 900 Coss 600 300 Crss 0 VDS = 15 V ID = 30 A 8 6 4 2 0 0 6 12 18 24 VDS – Drain-to-Source Voltage (V) Document Number: 70268 S-57253—Rev. D, 24-Feb-98 30 0 3 6 9 12 15 18 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUD30N03-30 Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 1.8 100 VGS = 10 V ID = 15 A I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) 1.6 1.4 1.2 1.0 TJ = 175C 10 TJ = 25C 0.8 0.6 –50 1 –25 0 25 50 75 100 125 150 175 0.3 0 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Drain Current vs. CaseTemperature Safe Operating Area 200 35 Limited by rDS(on) 100 I D – Drain Current (A) I D – Drain Current (A) 28 21 14 1 ms 10 10 ms 100 ms dc 1 TC = 25C Single Pulse 7 0 0.1 0 25 50 75 100 125 150 175 0.1 1 10 100 VDS – Drain-to-Source Voltage (V) TC – Case Temperature (C) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70268 S-57253—Rev. D, 24-Feb-98