SUP/SUB60N06-18 Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET V(BR)DSS (V) rDS(on) () ID (A) 60 0.018 60 TO-220AB D TO-263 DRAIN connected to TAB G G G D S D S Top View Top View S SUB60N06-18 SUP60N06-18 N-Channel MOSFET Symbol Limit Drain-Source Voltage Parameter VDS 60 Gate-Source Voltage VGS 20 TC = 25C Continuous Drain Current (TJ = 175C) TC = 100C L = 0.1 mH 120 IAR 60 EAR 180 mJ 120b TC = 25C (TO-220AB and TO-263) PD TA = 25C (TO-263)c Operating Junction and Storage Temperature Range 39 A IDM Avalanche Current Power Dissipation V 60 ID Pulsed Drain Current Repetitive Avalanche Energya Unit W 3.7 TJ, Tstg –55 to 175 C Symbol Limit Unit Parameter PCB Mount (TO-263)c Junction to Ambient Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case 40 RthJA hJA RthJC 62.5 C/W 1.25 Notes: a. Duty cycle 1%. b. See SOA curve for voltage derating. c. When mounted on 1” square PCB (FR-4 material). For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70290 S–57253—Rev. D, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 SUP/SUB60N06-18 Vishay Siliconix Parameter Symbol Test Condition Min Typ Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, IDS = 1 mA 2.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A 0.014 0.018 rDS(on) VGS = 10 V, ID = 30 A, TJ = 125C 0.024 0.030 VGS = 10 V, ID = 30 A, TJ = 175C 0.031 0.036 VDS = 15 V, ID = 30 A 49 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage V 4.0 "100 VDS = 60 V, VGS = 0 V, TJ = 175C a D i S Drain-Source On-State O S Resistance R i Forward Transconductancea gfs nA mA A 150 60 A W S Dynamicb Input Capacitance Ciss 2000 Output Capacitance Coss Reversen Transfer Capacitance Crss 115 Total Gate Chargec Qg 39 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 400 60 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 12 30 Rise Timec Turn-Off Delay Timec Fall Timec VDS = 30 V V, VGS = 10 V, V ID = 60 A tr VDD = 30 V,, RL = 0.5 W 11 30 td(off) ID ] 60 A, VGEN = 10 V, RG = 2.5 W 25 50 15 30 tf Source-Drain Diode Ratings and Characteristics (TC = Continuous Current nC C 12 ns 25C)b Is 60 Pulsed Current ISM 120 Forward Voltagea VSD Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge A IF = 60 A, VGS = 0 V trr IRM(REC) Qrr 1.6 60 IF = 60 A, A di/dt di/d = 100 A/ms A/ V ns 6.0 A 0.4 mC Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70290 S–57253—Rev. D, 24-Feb-98 SUP/SUB60N06-18 Vishay Siliconix Output Characteristics Transfer Characteristics 100 100 VGS = 10, 9, 8, 7 V 80 I D – Drain Current (A) I D – Drain Current (A) 75 6V 50 25 5V 60 40 TC = 125C 20 25C 4V –55C 0 0 0 2 4 6 8 0 10 VDS – Drain-to-Source Voltage (V) Transconductance 4 8 10 0.020 TC = –55C 60 r DS(on) – On-Resistance ( Ω ) 25C 50 125C 40 30 20 10 0 0.016 VGS = 10 V 0.012 0.008 0.004 0 0 10 20 30 40 50 0 20 40 VGS – Gate-to-Source Voltage (V) 60 80 100 ID – Drain Current (A) Capacitance Gate Charge 10 3000 V GS – Gate-to-Source Voltage (V) 2500 Ciss C – Capacitance (pF) 6 On-Resistance vs. Drain Current 70 g fs – Transconductance (S) 2 VGS – Gate-to-Source Voltage (V) 2000 1500 1000 Coss Crss 500 0 VGS = 10 V ID = 60 A 8 6 4 2 0 0 10 20 30 VDS – Drain-to-Source Voltage (V) Document Number: 70290 S–57253—Rev. D, 24-Feb-98 40 0 10 20 30 40 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUP/SUB60N06-18 Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.4 100 VGS = 10 V ID = 30 A TJ = 150C I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) 2.0 1.6 1.2 0.8 TJ = 25C 10 0.4 0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Maximum Avalanche and Drain Current vs. Case Temperature Safe Operating Area 200 70 10 ms 100 Limited by rDS(on) 50 I D – Drain Current (A) I D – Drain Current (A) 60 40 30 20 100 ms 10 1 ms 10 ms 1 100 ms TC = 25C Single Pulse 10 0 0 20 40 60 80 100 120 140 160 dc 0.1 180 0.1 TC – Case Temperature (C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10–5 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70290 S–57253—Rev. D, 24-Feb-98