SUD40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET, Logic Level rDS(on) () ID (A)a 0.022 @ VGS = 10 V 30 0.025 @ VGS = 4.5 V 30 VDS (V) 60 D TO-252 G Drain Connected to Tab G D S Top View S Order Number: SUD40N06-25L N-Channel MOSFET Parameter Gate-Source Voltage TC = 25C Continuous Drain Current (TJ = 175C)b TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25C Maximum Power Dissipation TA = 25C Operating Junction and Storage Temperature Range Symbol Limit Unit VGS 20 V ID 30 30 IDM 100 IS 34 IAR 34 EAR 58 PD 75 1.4b, 2.5c TJ, Tstg –55 to 175 Symbol Limit A mJ W C Parameter Free Air, FR4 Board Mount Maximum Junction-to-Ambient Free Air, Vertical Mount Maximum Junction-to-Case Unit 60 RthJA RthJC 110 C/W 2.0 Notes: a. Package limited. b. Free air, vertical mount. c. Surface mounted on 1” x 1” FR4 Board, t 10 sec. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70264 S-57741—Rev. G, 31-Mar-98 www.vishay.com FaxBack 408-970-5600 2-1 SUD40N06-25L Vishay Siliconix Parameter Typa Max 2.0 3.0 Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 VDS = 60 V, VGS = 0 V, TJ = 175C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currentb b D i Source S O State S R i Drain-Source Drain On On-State Resistance Forward Transconductanceb ID(on) rDS(on) DS( ) gfs VDS = 5 V, VGS = 10 V V "100 20 nA mA A A VGS = 10 V, ID = 20 A 0.022 VGS = 10 V, ID = 20 A, TJ = 125C 0.043 VGS = 10 V, ID = 20 A, TJ = 175C 0.053 VGS = 4.5 V, ID = 20 A 0.025 VDS = 15 V, ID = 20 A W S Dynamic Input Capacitance Ciss 1800 Output Capacitance Coss Reverse Transfer Capacitance Crss 100 Total Gate Chargec Qg 40 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 350 60 Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 10 Turn-On Delay Timec td(on) 10 20 tr 9 20 28 50 7 15 Rise Timec Turn-Off Delay Timec Fall Timec td(off) VDS = 30 V V, VGS = 10 V V, ID = 40 A VDD = 30 V V,, RL = 0 0.9 9W ID^ 20 A, A VGEN = 10 V V, RG = 2 2.5 5W tf nC C 9 ns Source-Drain Diode Ratings and Characteristics (TC = 25C) Pulsed Current ISM 20 A Diode Forward Voltage VSD IF = 20 A, VGS = 0 V 1.0 1.5 V Reverse Recovery Time trr IF = 20 A, di/dt = 100 A/ms 48 100 ns Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70264 S-57741—Rev. G, 31-Mar-98 SUD40N06-25L Vishay Siliconix Output Characteristics Transfer Characteristics 60 100 6V 5V VGS = 10, 9, 8, 7 V 80 I D – Drain Current (A) I D – Drain Current (A) 45 60 4V 40 20 30 TC = 125C 15 3V 25C –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 6 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 0.04 70 TC = –55C 50 r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 60 25C 125C 40 30 20 10 0 0.03 VGS = 4.5 V VGS = 10 V 0.02 0.01 0 0 12 24 36 48 60 0 15 ID – Drain Current (A) 45 60 ID – Drain Current (A) Capacitance Gate Charge 10 3000 V GS – Gate-to-Source Voltage (V) 2500 C – Capacitance (pF) 30 Ciss 2000 1500 1000 Coss 500 Crss 0 VDS = 30 V ID = 20 A 8 6 4 2 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70264 S-57741—Rev. G, 31-Mar-98 60 0 10 20 30 40 50 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUD40N06-25L Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 I S – Source Current (A) r DS(on) – On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 20 A 1.5 1.0 TJ = 150C TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain Current vs. Case Temperature Safe Operating Area 200 50 100 Limited by rDS(on) I D – Drain Current (A) I D – Drain Current (A) 40 30 20 100 ms 10 1 ms 10 ms 1 100 ms dc, 1 s TC = 25C Single Pulse 10 0 0 25 50 75 100 125 150 0.1 175 0.1 TC – Case Temperature (C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70264 S-57741—Rev. G, 31-Mar-98