VISHAY SUD40N06-25L

SUD40N06-25L
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
rDS(on) ()
ID (A)a
0.022 @ VGS = 10 V
30
0.025 @ VGS = 4.5 V
30
VDS (V)
60
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD40N06-25L
N-Channel MOSFET
Parameter
Gate-Source Voltage
TC = 25C
Continuous Drain Current (TJ = 175C)b
TC = 100C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle 1%)
L = 0.1 mH
TC = 25C
Maximum Power Dissipation
TA = 25C
Operating Junction and Storage Temperature Range
Symbol
Limit
Unit
VGS
20
V
ID
30
30
IDM
100
IS
34
IAR
34
EAR
58
PD
75
1.4b, 2.5c
TJ, Tstg
–55 to 175
Symbol
Limit
A
mJ
W
C
Parameter
Free Air, FR4 Board Mount
Maximum Junction-to-Ambient
Free Air, Vertical Mount
Maximum Junction-to-Case
Unit
60
RthJA
RthJC
110
C/W
2.0
Notes:
a. Package limited.
b. Free air, vertical mount.
c. Surface mounted on 1” x 1” FR4 Board, t 10 sec.
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Document Number: 70264
S-57741—Rev. G, 31-Mar-98
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SUD40N06-25L
Vishay Siliconix
Parameter
Typa
Max
2.0
3.0
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125C
50
VDS = 60 V, VGS = 0 V, TJ = 175C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Currentb
b
D i Source
S
O State
S
R i
Drain-Source
Drain
On
On-State
Resistance
Forward Transconductanceb
ID(on)
rDS(on)
DS( )
gfs
VDS = 5 V, VGS = 10 V
V
"100
20
nA
mA
A
A
VGS = 10 V, ID = 20 A
0.022
VGS = 10 V, ID = 20 A, TJ = 125C
0.043
VGS = 10 V, ID = 20 A, TJ = 175C
0.053
VGS = 4.5 V, ID = 20 A
0.025
VDS = 15 V, ID = 20 A
W
S
Dynamic
Input Capacitance
Ciss
1800
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
100
Total Gate Chargec
Qg
40
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
350
60
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
10
Turn-On Delay Timec
td(on)
10
20
tr
9
20
28
50
7
15
Rise Timec
Turn-Off Delay Timec
Fall Timec
td(off)
VDS = 30 V
V, VGS = 10 V
V, ID = 40 A
VDD = 30 V
V,, RL = 0
0.9
9W
ID^ 20 A,
A VGEN = 10 V
V, RG = 2
2.5
5W
tf
nC
C
9
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)
Pulsed Current
ISM
20
A
Diode Forward Voltage
VSD
IF = 20 A, VGS = 0 V
1.0
1.5
V
Reverse Recovery Time
trr
IF = 20 A, di/dt = 100 A/ms
48
100
ns
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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Document Number: 70264
S-57741—Rev. G, 31-Mar-98
SUD40N06-25L
Vishay Siliconix
Output Characteristics
Transfer Characteristics
60
100
6V
5V
VGS = 10, 9, 8, 7 V
80
I D – Drain Current (A)
I D – Drain Current (A)
45
60
4V
40
20
30
TC = 125C
15
3V
25C
–55C
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
0.04
70
TC = –55C
50
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)
60
25C
125C
40
30
20
10
0
0.03
VGS = 4.5 V
VGS = 10 V
0.02
0.01
0
0
12
24
36
48
60
0
15
ID – Drain Current (A)
45
60
ID – Drain Current (A)
Capacitance
Gate Charge
10
3000
V GS – Gate-to-Source Voltage (V)
2500
C – Capacitance (pF)
30
Ciss
2000
1500
1000
Coss
500
Crss
0
VDS = 30 V
ID = 20 A
8
6
4
2
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 70264
S-57741—Rev. G, 31-Mar-98
60
0
10
20
30
40
50
Qg – Total Gate Charge (nC)
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SUD40N06-25L
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
I S – Source Current (A)
r DS(on) – On-Resistance ( Ω )
(Normalized)
VGS = 10 V
ID = 20 A
1.5
1.0
TJ = 150C
TJ = 25C
10
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
TJ – Junction Temperature (C)
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Drain Current vs. Case Temperature
Safe Operating Area
200
50
100
Limited
by rDS(on)
I D – Drain Current (A)
I D – Drain Current (A)
40
30
20
100 ms
10
1 ms
10 ms
1
100 ms
dc, 1 s
TC = 25C
Single Pulse
10
0
0
25
50
75
100
125
150
0.1
175
0.1
TC – Case Temperature (C)
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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2-4
Document Number: 70264
S-57741—Rev. G, 31-Mar-98