VISHAY SUD25N06-45L

SUD25N06-45L
Vishay Siliconix
N-Channel 60-V (D-S), 175C MOSFET, Logic Level
VDS (V)
60
rDS(on) ()
ID (A)
0.035 @ VGS = 10 V
25
0.045 @ VGS = 4.5 V
22
D
TO-252
G
Drain Connected to Tab
G
D
S
Top View
S
Order Number:
SUD25N06-45L
N-Channel MOSFET
Parameter
Symbol
Limit
Drain-Source Voltage
VDS
60
Gate-Source Voltage
VGS
20
Continuous Drain Current (TJ = 175C)
TC = 25C
TC = 100C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle 1%)
L = 0.1 mH
TC = 25C
Maximum Power Dissipation
TA = 25C
ID
V
25
16
IDM
30
IS
25
IAR
25
EAR
31
PD
Unit
50
2.5a
A
mJ
W
TJ, Tstg
–55 to 175
C
Symbol
Limit
Unit
Maximum Junction-to-Ambienta
RthJA
60
Maximum Junction-to-Case
RthJC
3.0
Operating Junction and Storage Temperature Range
Parameter
C/W
Notes:
a. Surface mounted on 1” x 1” FR4 Board.
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Document Number: 70274
S-57253—Rev. E, 24-Feb-98
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SUD25N06-45L
Vishay Siliconix
Parameter
Typa
Symbol
Test Condition
Min
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
VGS(th)
VDS = VGS, ID = 250 mA
1.0
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
VDS = 60 V, VGS = 0 V
1
Zero
Gate
Voltage
Drain
Z
G
V l
D i Current
C
IDSS
VDS = 60 V, VGS = 0 V, TJ = 125C
50
VDS = 60 V, VGS = 0 V, TJ = 175C
150
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
On-State Drain Currentb
b
D i S
O S
R i
Drain-Source
On-State
Resistance
Forward
Transconductanceb
ID(on)
rDS(on)
gfs
VDS = 5 V, VGS = 10V
V
3.0
"100
20
0.025
0.035
VGS = 10 V, ID = 12 A, TJ = 125C
0.045
0.063
VGS = 10 V, ID = 12 A, TJ = 175C
0.058
0.081
VGS = 4.5 V, ID = 12 A
0.036
0.045
15
mA
A
A
VGS = 10 V, ID = 12 A
VDS = 15 V, ID = 12 A
nA
25
W
S
Dynamic
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
1320
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
210
56
Total Gate Chargec
Qg
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
4.5
Turn-On Delay Timec
td(on)
10
20
tr
10
20
31
45
10
20
Rise Timec
Turn-Off Delay
Timec
Fall Timec
td(off)
26
VDS = 30 V
V, VGS = 10 V
V, ID = 25 A
VDD = 30 V
V,, RL = 1
1.2
2W
ID ^ 25 A
A, VGEN = 10 V
V, RG = 7
7.5
5W
tf
40
nC
C
7.5
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)a
Pulsed Current
ISM
Diode Forward Voltage
VSD
Reverse Recovery Time
trr
Reverse Recovery Charge
Qrr
IF = 25 A, VGS = 0 V
60
IF = 25 A, di/dt = 100 A/ms
0.13
30
A
1.5
V
90
ns
mC
Notes:
a. For design aid only; not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
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Document Number: 70274
S-57253—Rev. E, 24-Feb-98
SUD25N06-45L
Vishay Siliconix
Output Characteristics
Transfer Characteristics
30
30
VGS = 5, 6, 7, 8, 9, 10 V
24
I D – Drain Current (A)
I D – Drain Current (A)
24
18
4V
12
6
18
12
TC = 125C
6
25C
1, 2, 3 V
–55C
0
0
0
2
4
6
8
10
0
VDS – Drain-to-Source Voltage (V)
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Transconductance
On-Resistance vs. Drain Current
50
0.100
TC = –55C
r DS(on) – On-Resistance ( Ω )
g fs – Transconductance (S)
40
25C
30
125C
20
10
0
0.075
0.050
VGS = 4.5 V
VGS = 10 V
0.025
0
0
6
12
18
24
30
0
6
12
ID – Drain Current (A)
24
30
24
30
ID – Drain Current (A)
Capacitance
Gate Charge
10
1800
V GS – Gate-to-Source Voltage (V)
1500
C – Capacitance (pF)
18
Ciss
1200
900
600
Coss
300
Crss
0
VDS = 30 V
ID = 25 A
8
6
4
2
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 70274
S-57253—Rev. E, 24-Feb-98
60
0
6
12
18
Qg – Total Gate Charge (nC)
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SUD25N06-45L
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
TJ = 150C
I S – Source Current (A)
r DS(on)– On-Resistance ( Ω )
(Normalized)
VGS = 10 V
ID = 12 A
1.5
1.0
TJ = 25C
10
0.5
0
–50
1
–25
0
25
50
75
100
125
150
175
0.3
TJ – Junction Temperature (C)
0.6
0.9
1.2
1.5
VSD – Source-to-Drain Voltage (V)
Drain Current vs. Case Temperature
Safe Operating Area
30
50
I D – Drain Current (A)
I D – Drain Current (A)
18
12
100 µs
Limited
by rDS(on)
24
10
1 ms
1
10 ms
100 ms
dc, 1 s
TC = 25C
Single Pulse
6
0
0.1
0
25
50
75
100
125
150
175
0.1
TC – Case Temperature (C)
1
10
100
VDS – Drain-to-Source Voltage (V)
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
3
Square Wave Pulse Duration (sec)
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2-4
Document Number: 70274
S-57253—Rev. E, 24-Feb-98