SUD25N06-45L Vishay Siliconix N-Channel 60-V (D-S), 175C MOSFET, Logic Level VDS (V) 60 rDS(on) () ID (A) 0.035 @ VGS = 10 V 25 0.045 @ VGS = 4.5 V 22 D TO-252 G Drain Connected to Tab G D S Top View S Order Number: SUD25N06-45L N-Channel MOSFET Parameter Symbol Limit Drain-Source Voltage VDS 60 Gate-Source Voltage VGS 20 Continuous Drain Current (TJ = 175C) TC = 25C TC = 100C Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH TC = 25C Maximum Power Dissipation TA = 25C ID V 25 16 IDM 30 IS 25 IAR 25 EAR 31 PD Unit 50 2.5a A mJ W TJ, Tstg –55 to 175 C Symbol Limit Unit Maximum Junction-to-Ambienta RthJA 60 Maximum Junction-to-Case RthJC 3.0 Operating Junction and Storage Temperature Range Parameter C/W Notes: a. Surface mounted on 1” x 1” FR4 Board. For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm Document Number: 70274 S-57253—Rev. E, 24-Feb-98 www.vishay.com FaxBack 408-970-5600 2-1 SUD25N06-45L Vishay Siliconix Parameter Typa Symbol Test Condition Min Max V(BR)DSS VGS = 0 V, ID = 250 mA 60 VGS(th) VDS = VGS, ID = 250 mA 1.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V VDS = 60 V, VGS = 0 V 1 Zero Gate Voltage Drain Z G V l D i Current C IDSS VDS = 60 V, VGS = 0 V, TJ = 125C 50 VDS = 60 V, VGS = 0 V, TJ = 175C 150 Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage On-State Drain Currentb b D i S O S R i Drain-Source On-State Resistance Forward Transconductanceb ID(on) rDS(on) gfs VDS = 5 V, VGS = 10V V 3.0 "100 20 0.025 0.035 VGS = 10 V, ID = 12 A, TJ = 125C 0.045 0.063 VGS = 10 V, ID = 12 A, TJ = 175C 0.058 0.081 VGS = 4.5 V, ID = 12 A 0.036 0.045 15 mA A A VGS = 10 V, ID = 12 A VDS = 15 V, ID = 12 A nA 25 W S Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 1320 VGS = 0 V, V VDS = 25 V V, f = 1 MH MHz pF F 210 56 Total Gate Chargec Qg Gate-Source Chargec Qgs Gate-Drain Chargec Qgd 4.5 Turn-On Delay Timec td(on) 10 20 tr 10 20 31 45 10 20 Rise Timec Turn-Off Delay Timec Fall Timec td(off) 26 VDS = 30 V V, VGS = 10 V V, ID = 25 A VDD = 30 V V,, RL = 1 1.2 2W ID ^ 25 A A, VGEN = 10 V V, RG = 7 7.5 5W tf 40 nC C 7.5 ns Source-Drain Diode Ratings and Characteristics (TC = 25C)a Pulsed Current ISM Diode Forward Voltage VSD Reverse Recovery Time trr Reverse Recovery Charge Qrr IF = 25 A, VGS = 0 V 60 IF = 25 A, di/dt = 100 A/ms 0.13 30 A 1.5 V 90 ns mC Notes: a. For design aid only; not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. www.vishay.com FaxBack 408-970-5600 2-2 Document Number: 70274 S-57253—Rev. E, 24-Feb-98 SUD25N06-45L Vishay Siliconix Output Characteristics Transfer Characteristics 30 30 VGS = 5, 6, 7, 8, 9, 10 V 24 I D – Drain Current (A) I D – Drain Current (A) 24 18 4V 12 6 18 12 TC = 125C 6 25C 1, 2, 3 V –55C 0 0 0 2 4 6 8 10 0 VDS – Drain-to-Source Voltage (V) 1 2 3 4 5 VGS – Gate-to-Source Voltage (V) Transconductance On-Resistance vs. Drain Current 50 0.100 TC = –55C r DS(on) – On-Resistance ( Ω ) g fs – Transconductance (S) 40 25C 30 125C 20 10 0 0.075 0.050 VGS = 4.5 V VGS = 10 V 0.025 0 0 6 12 18 24 30 0 6 12 ID – Drain Current (A) 24 30 24 30 ID – Drain Current (A) Capacitance Gate Charge 10 1800 V GS – Gate-to-Source Voltage (V) 1500 C – Capacitance (pF) 18 Ciss 1200 900 600 Coss 300 Crss 0 VDS = 30 V ID = 25 A 8 6 4 2 0 0 10 20 30 40 50 VDS – Drain-to-Source Voltage (V) Document Number: 70274 S-57253—Rev. E, 24-Feb-98 60 0 6 12 18 Qg – Total Gate Charge (nC) www.vishay.com FaxBack 408-970-5600 2-3 SUD25N06-45L Vishay Siliconix On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 2.5 100 2.0 TJ = 150C I S – Source Current (A) r DS(on)– On-Resistance ( Ω ) (Normalized) VGS = 10 V ID = 12 A 1.5 1.0 TJ = 25C 10 0.5 0 –50 1 –25 0 25 50 75 100 125 150 175 0.3 TJ – Junction Temperature (C) 0.6 0.9 1.2 1.5 VSD – Source-to-Drain Voltage (V) Drain Current vs. Case Temperature Safe Operating Area 30 50 I D – Drain Current (A) I D – Drain Current (A) 18 12 100 µs Limited by rDS(on) 24 10 1 ms 1 10 ms 100 ms dc, 1 s TC = 25C Single Pulse 6 0 0.1 0 25 50 75 100 125 150 175 0.1 TC – Case Temperature (C) 1 10 100 VDS – Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 3 Square Wave Pulse Duration (sec) www.vishay.com FaxBack 408-970-5600 2-4 Document Number: 70274 S-57253—Rev. E, 24-Feb-98