VISHAY SUP75N08-10

SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175C MOSFET
V(BR)DSS (V)
rDS(on) ()
ID (A)
75
0.010
75a
D
TO-220AB
TO-263
G
DRAIN connected to TAB
G
D S
Top View
G D S
S
SUB75N08-10
Top View
SUP75N08-10
N-Channel MOSFET
Parameter
Gate-Source Voltage
TC = 25C
Continuous Drain Current
(TJ = 175C)
TC = 125C
Symbol
Limit
Unit
VGS
20
V
75a
ID
55
A
Pulsed Drain Current
IDM
240
Avalanche Current
IAR
60
Repetitive Avalanche Energyb
L = 0.1 mH
TC = 25C (TO-220AB and TO-263)
Power Dissipation
TA = 25C (TO-263)d
Operating Junction and Storage Temperature Range
EAR
280
mJ
187c
PD
W
3.7
TJ, Tstg
–55 to 175
C
Symbol
Limit
Unit
Parameter
PCB Mount
(TO-263)d
Junction to Ambient
Junction-to-Ambient
Free Air (TO-220AB)
Junction-to-Case
40
RthJA
hJA
RthJC
62.5
C/W
0.8
Notes
a. Package limited.
b. Duty cycle 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
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2-1
SUP/SUB75N08-10
Vishay Siliconix
Specifications (TJ = 25C Unless Otherwise Noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
V(BR)DSS
VGS = 0 V, ID = 250 mA
75
VGS(th)
VDS = VGS, ID = 250 mA
2.0
3.5
4.5
IGSS
VDS = 0 V, VGS = "20 V
"100
VDS = 75 V, VGS = 0 V
1
VDS = 75 V, VGS = 0 V, TJ = 125C
50
Unit
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Z
Zero
Gate
G
Voltage
V l
Drain
D i Current
C
IDSS
On-State Drain Currenta
ID(on)
V
VDS = 75 V, VGS = 0 V, TJ = 175C
VDS = 5 V, VGS = 10 V
rDS(on)
A
0.0087
VGS = 10 V, ID = 30 A, TJ = 125C
gfs
VDS = 15 V, ID = 30 A
0.010
0.017
VGS = 10 V, ID = 30 A, TJ = 175C
Forward Transconductancea
mA
A
150
120
VGS = 10 V, ID = 30 A
a
D i S
O S
R i
Drain-Source
On-State
Resistance
nA
W
0.021
30
S
Dynamicb
Input Capacitance
Ciss
Output Capacitance
Coss
4800
Reverse Transfer Capacitance
Crss
270
Total Gate Chargec
Qg
85
VGS = 0 V,
V VDS = 25 V
V, f = 1 MH
MHz
pF
F
910
120
Gate-Source Chargec
Qgs
Gate-Drain Chargec
Qgd
24
Turn-On Delay Timec
td(on)
20
40
95
200
65
120
20
60
Rise
Timec
Turn-Off Delay Timec
Fall Timec
tr
td(off)
VDS = 30 V, VGS = 10 V,
V ID = 75 A
VDD = 30 V
V,, RL = 0
0.47
47 W
ID ^ 75 A,
A VGEN = 10 V
V, RG = 2
2.5
5W
tf
nC
C
31
ns
Source-Drain Diode Ratings and Characteristics (TC = 25C)b
Continuous Current
IS
75
Pulsed Current
ISM
240
Forward Voltagea
VSD
Reverse Recovery Time
Peak Reverse Recovery Current
Reverse Recovery Charge
A
IF = 75 A , VGS = 0 V
trr
IRM(REC)
Qrr
IF = 75 A,
A di/dt
di/d = 100 A/ms
A/
1.0
1.3
V
80
120
ns
7
9
A
0.28
0.54
mC
Notes
a. Pulse test: pulse width v 300 msec, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
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Document Number: 70263
S-57253—Rev. B, 24-Feb-98
SUP/SUB75N08-10
Vishay Siliconix
Output Characteristics
Transfer Characteristics
250
200
VGS = 10 V
9V
8V
7V
150
I D – Drain Current (A)
I D – Drain Current (A)
200
150
100
6V
50
4V
100
50
TC = 125C
25C
5V
–55C
0
0
0
2
4
6
8
10
0
2
VDS – Drain-to-Source Voltage (V)
Transconductance
8
On-Resistance vs. Drain Current
0.012
TC = –55C
100
0.010
r DS(on) – On-Resistance ( Ω )
25C
80
125C
60
40
20
0
VGS = 10 V
0.008
VGS = 20 V
0.006
0.004
0.002
0
0
20
40
60
80
100
0
20
40
VGS – Gate-to-Source Voltage (V)
60
80
100
ID – Drain Current (A)
Capacitance
Gate Charge
7000
20
V GS – Gate-to-Source Voltage (V)
6000
C – Capacitance (pF)
6
VGS – Gate-to-Source Voltage (V)
120
g fs – Transconductance (S)
4
Ciss
5000
4000
3000
2000
Coss
Crss
1000
0
VDS = 30 V
ID = 75 A
16
12
8
4
0
0
10
20
30
40
50
VDS – Drain-to-Source Voltage (V)
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
60
0
25
50
75
100
125
150
175
Qg – Total Gate Charge (nC)
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SUP/SUB75N08-10
Vishay Siliconix
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
2.5
100
2.0
TJ = 150C
I S – Source Current (A)
r DS(on) – On-Resistance ( Ω )
(Normalized)
VGS = 10 V
ID = 30 A
1.5
1.0
TJ = 25C
10
0.5
0
–50
1
–25
0
25
50
75 100 125
TJ – Junction Temperature (C)
150
175
0.3
0.6
0.9
1.2
VSD – Source-to-Drain Voltage (V)
1.5
Maximum Avalanche and Drain Current
vs. Case Temperature
100
Limited
by rDS(on)
100
I D – Drain Current (A)
80
I D – Drain Current (A)
Safe Operating Area
500
60
40
10 ms
100 ms
10
1 ms
10 ms
1
100 ms
dc
TC = 25C
Single Pulse
20
0
0
25
50
75
100
125
150
175
0.1
0.1
TC – Case Temperature (C)
1
10
VDS – Drain-to-Source Voltage (V)
100
Normalized Thermal Transient Impedance, Junction-to-Case
2
Normalized Effective Transient
Thermal Impedance
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–5
10–4
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2-4
10–3
10–2
Square Wave Pulse Duration (sec)
10–1
1
3
Document Number: 70263
S-57253—Rev. B, 24-Feb-98