2SK4033 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS III) 2SK4033 Chopper Regulator, DC/DC Converter and Motor Drive Applications Unit: mm z 4 V gate drive z Low drain−source ON-resistance : RDS (ON) = 0.07 Ω (typ.) z High forward transfer admittance : |Yfs| = 6.0 S (typ.) z Low leakage current : IDSS = 100 μA (max) (VDS = 60 V) z Enhancement mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain−source voltage VDSS 60 V Drain−gate voltage (RGS = 20 kΩ) VDGR 60 V Gate−source voltage VGSS ±20 V (Note 1) ID 5 A Pulse (Note 1) IDP 20 A Drain power dissipation (Tc = 25°C) PD 20 W Single-pulse avalanche energy (Note 2) EAS 40.5 mJ Avalanche current IAR 5 A Repetitive avalanche energy (Note 3) EAR 2 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55~150 °C Drain current DC JEDEC ⎯ JEITA ⎯ TOSHIBA 2-7B1B Weight: 0.36 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Thermal Characteristics Characteristic Symbol Max Unit Thermal resistance, channel to case Rth (ch−c) 6.25 °C / W Thermal resistance, channel to ambient Rth (ch−a) 125 °C / W Note 1: Ensure that the channel temperature does not exceed 150°C. Note 2: VDD = 25 V, Tch = 25°C (initial), L = 2.2 mH, RG = 25 Ω, IAR = 5 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care. 1 2006-11-20 2SK4033 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V — — ±10 μA Drain cutoff current IDSS VDS = 60 V, VGS = 0 V — — 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 — — V Vth VDS = 10 V, ID = 1 mA 1.3 — 2.5 V VGS = 4 V, ID = 2.5 A — 0.09 0.15 VGS = 10 V, ID = 2.5 A — 0.07 0.10 VDS = 10 V, ID = 2.5 A 3.0 6.0 — — 730 — VDS = 10 V, VGS = 0 V, f = 1 MHz — 60 — Drain−source breakdown voltage Gate threshold voltage Drain−source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss — 95 — tr — 10 — ton — 20 — Rise time Turn−on time Switching time Ω S pF ns Fall time tf — 4 — Turn−off time toff — 35 — Total gate charge (gate−source plus gate−drain) Qg — 15 — Gate−source charge Qgs — 11 — Gate−drain (“Miller”) charge Qgd — 4 — VDD ≈ 48 V, VGS = 10 V, ID = 5 A nC Source−Drain Ratings and Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1) IDR — — — 5 A Pulse drain reverse current (Note 1) IDRP — — — 20 A Forward voltage (diode) VDSF — — −1.7 V Reverse recovery time trr — 34 — ns Reverse recovery charge Qrr — 28 — μC IDR = 5 A, VGS = 0 V IDR = 5 A, VGS = 0 V, dIDR / dt = 50 A / μs Marking K4033 Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-20 2SK4033 ＩＤ－ＶＤＳ 10 4 8 10 4 Common source ソース接地 Tc = 25°C Tc=25℃ Pulse test パルス測定 3.3 8 6 4 Drain current ID (A) ドレイン電流 Ｉ Ｄ （Ａ） ＩＤ－ＶＤＳ 10 6 8 ドレイン電流 Ｉ Drain current IＤD （Ａ） (A) 5 3 3 2 VGS=2.8V 1 6 3.3 4 3 2 VGS=2.8V ソース接地 Common source Tc=25℃ Tc = 25°C パルス測定 Pulse test 0 0 0 0.4 0.8 1.2 1.6 2 0 2 Drain-source voltage VDS (V) ドレイン・ソース間電圧 Ｖ ＤＳ （Ｖ） 4 ＩＤ-ＶＧＳ 8 10 Ｖ ＤＳ－Ｖ ＧＳ 2 Common source ソース接地 Tc = 25°C Ｔｃ=25℃ Pulse test パルス測定 1.6 1.2 V 8 DS ＤＳ （Ｖ） (V) Common source ソース接地 = 10 V VV =10V DSDS Pulse test パルス測定 Drain-source voltage ドレイン・ソース間電圧 Ｖ 10 ドレイン電流 Ｉ Drain current Ｄ （Ａ） ID (A) 6 ドレイン・ソース間電圧 Ｖ Drain-source voltage VDS (V) ＤＳ （Ｖ） 6 4 100 25 2 Tc=-55℃ 0.8 5 0.4 2.5 0 Ｉ Ｄ =1.2A 0 1 2 3 4 0 5 0 Gate-source voltage VGS (V) ゲート・ソース間電圧 Ｖ ＧＳ (V) 4 ⎪Yfs⎪ – ID 12 16 20 ＲＤＳ(on)－ＩＤ 0.5 100 Common source ソース接地 Ta = 25°C Ｔｃ=25℃ Pulse test パルス測定 0.4 DS ドレイン･ソース間オン抵抗 (on) (m Drain-sourceRON RDS (ON) (Ω) DSresistance (ON) (mΩ) Common source VDS = 10 V Pulse test Tc = −55°C 100 25 1 0.1 0.1 1 10 0.3 Ω) 10 ドレイン・ソース間オン抵抗 R Forward transfer admittance ⎪Y⎪Y fs⎪fs⎪(S) (S) 順方向伝達アドミタンス 8 ゲート・ソース間電圧 Ｖ ＧＳ （Ｖ） Gate-source voltage VGS (V) 0.2 4V 0.1 VGS=10V 0 100 0 ドレイン電流 ID (A) (A) Drain current ID 2 4 6 8 10 Drain current ID (A) ドレイン電流 Ｉ Ｄ (A) 3 2006-11-20 2SK4033 ＩＤＲ －Ｖ ＤＳ Ｒ ＤＳ（ｏｎ）－Ｔｃ 10 5 10 Drain reverse currentＤＲ IDR (A) ドレイン逆電流 Ｉ （Ａ） ＤＳ (on) (Ω) ドレイン・ソース間オン抵抗 Ｒ Common source ソース接地 パルス測定 Pulse test 0.15 Ｉ Ｄ =5A 2.5 1.2 5 1.2 0.1 2.5 VGS=4V 0.05 VGS=10V 0 -80 -40 0 40 80 Ambient ケース温度 Ｔｃ （℃) temperature Ta (°C) 120 3 1 1 VGS=0V V GS = 0 V Common source ソース接地 Tc = 25°C Ｔｃ=25℃ Pulse test パルス測定 0.1 160 0 -0.2 -0.4 -0.6 -0.8 -1.0 Drain-source voltage VDSＤＳ （Ｖ） (V) ドレイン・ソース間電圧 Ｖ -1.2 Ｖｔｈ－Ｔｃ Capacitance 静電容量－Ｖ– ＤＳVDS 2.6 Common source ソース接地 VGS = 0 V VGS=0V f=1MHz f = 1 MHz Tc=25℃ Tc = 25°C Common source ソース接地 = 10 V VVDSDS =10V = 1 mA ＩID Ｄ =1mA 2.4 1000 Gate threshold Vth (V) ゲートしき い値電voltage 圧 Vth (V) 10000 Capacitance C (pF) 静電容量 Ｃ (ｐＦ) Ciss 100 Coss パルス測定 Pulse test 2.2 2 1.8 1.6 1.4 1.2 Crss 1 10 0.1 1 10 -80 100 -40 ドレイン・ソース間電圧 Ｖ Drain-source voltage VDS (V) ＤＳ （Ｖ） 0 40 80 120 ケース温度 Ｔｃ (℃) Case temperature Tc (°C) 160 Dynamic input / output characteristics ダイナミック入出力特性 Common source ソース接地 ID = 5 A Ｉ Ｄ =5A Tc = 25°C Ｔｃ=25℃ Pulse test パルス測定 PD (W) Drain-source voltage VDS (V) ドレイン・ソース間電圧 Ｖ ＤＳ （Ｖ） VＤS 40 20 15 30 １２V 20 10 ２４V VＤＤ =４８V 5 10 ゲート・ソース間電圧 Ｖ Gate-source voltageＧＳ （Ｖ） VGS (V) 25 50 Drain power dissipation Drain-source ON resistance RDS (ON) (Ω) 0.2 VGS 0 0 0 Case temperature Tc (°C) 4 5 10 15 20 ゲート入力電化量 Ｑｇ （ｎＣ） Total gate charge Qg (nC) 25 30 2006-11-20 2SK4033 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 Single pulse PDM 0.1 0.1 t 0.05 T 0.02 0.01 0.01 10 μ Duty = t/T Rth (ch-c) = 6.25°C/W 100 μ 1m 100 m 10 m Pulse width 1 tw (s) EAS – Tch SAFE OPERATING AREA 安全動作領域 50 EAS (mJ) 100 IDID max(パルス)* max (pulse)* 1ms* 100μs* max(連続) IDIDmax (continuous) Avalanche energy Drain current ＤID (A) ドレイン電流 Ｉ （Ａ） 10 10 DC OPERATION 直流動作 Tc=25℃ TC =25°C 1 0.1 with increase in temperature. 20 10 50 V DSS max 安全動作領域は温度によ って デ ィレー must ティンbe グして考える 必 Curves derated linearly 要があります。 30 0 25 * Single pulse *：単発パルス Tc=25℃ Tc = 25°C 40 75 100 125 Channel temperature (initial) 150 Tch (°C) 0.01 0.1 1 10 ドレイン・ソース間電圧 Ｖ Drain-source voltage VDS ＤＳ （Ｖ） (V) 100 15 V BVDSS IAR 0V VDD Test circuit RG = 25 Ω VDD = 25 V, L = 2.2 mH 5 VDS Waveform Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2006-11-20 2SK4033 RESTRICTIONS ON PRODUCT USE 20070701-EN • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 6 2006-11-20