IRFD9120 Data Sheet July 1999 1.0A, 100V, 0.6 Ohm, P-Channel Power MOSFET 2285.3 Features • 1.0A, 100V This advanced power MOSFET is designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are P-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. • rDS(ON) = 0.6Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance Symbol Formerly developmental type TA17501. D Ordering Information PART NUMBER File Number PACKAGE BRAND G IRFD9120 HEXDIP IRFD9120 NOTE: When ordering, use the entire part number. S Packaging HEXDIP DRAIN GATE SOURCE 4-45 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999 IRFD9120 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .VDGR Continuous Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS Maximum Power Dissipation (Figure 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Linear Derating Factor (Figure 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg IRFD9120 -100 -100 -1.0 -8.0 ±20 1.0 0.008 370 -55 to 150 UNITS V V A A V W W/oC mJ oC 300 260 oC oC CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. TJ = 25oC to 125oC. Electrical Specifications TC = 25oC, Unless Otherwise Specified PARAMETER SYMBOL TEST CONDITIONS Drain to Source Breakdown Voltage BVDSS ID = -250µA, VGS = 0V, (Figure 9) Gate to Threshold Voltage VGS(TH) VGS = VDS, ID = -250µA Zero Gate Voltage Drain Current IDSS On-State Drain Current (Note 2) ID(ON) Gate to Source Leakage Current IGSS Drain to Source On Resistance (Note 2) Forward Transconductance (Note 2) Turn-On Delay Time rDS(ON) gfs td(ON) Rise Time tr Turn-Off Delay Time td(OFF) Fall Time tf Total Gate Charge (Gate to Source + Gate to Drain) Qg(TOT) Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS Internal Drain Inductance LD Internal Source Inductance LS MIN TYP MAX UNITS -100 - - V -2 - -4 V VDS = Rated BVDSS, VGS = 0V - - -25 µA VDS = 0.8 x Rated BVDSS, VGS = 0V, TC = 125oC - - -250 µA -1.0 - - A - - ±500 nA - 0.5 0.6 Ω 0.8 1.2 - S VDS > ID(ON) x rDS(ON) MAX, VGS = -10V VGS = ±20V ID = -0.8A, VGS = -10V, (Figures 7, 8) VDS < 50V, ID = -0.8A (Figure 11) VDD = 0.5 x Rated BVDSS, ID = -1.0A, RG = 9.1Ω, VGS = -10V, (Figures 16, 17) RL = 50Ω for VDD = -50V MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -1.0A, VDS = 0.8 x Rated BVDSS (Figures 13, 18, 19) Gate Charge is Essentially Independent of Operating Temperature VDS = -25V, VGS = 0V, f = 1MHz, (Figure 10) Measured From the Drain Modified MOSFET Lead, 2.0mm (0.08in) From Symbol Showing the InHeader to Center of Die ternal Devices Measured From the Source Inductances D Lead, 2.0mm (0.08in) From Header to Source Bonding Pad - 25 50 ns - 50 100 ns - 50 100 ns - 50 100 ns - 16 20 nC - 9 - nC - 7 - nC - 300 - pF - 200 - pF - 50 - pF - 4.0 - nH - 6.0 - nH - - 120 oC/W LD G LS S Thermal Resistance Junction to Ambient 4-46 RθJA Typical Socket Mount IRFD9120 Source to Drain Diode Specifications PARAMETER SYMBOL Continuous Source to Drain Current Pulse Source to Drain Current (Note 3) ISD ISDM TEST CONDITIONS Modified MOSFET Symbol Showing the Integral Reverse P-N Junction Diode MIN TYP MAX UNITS - - -1.0 A - - -8.0 A - - -1.5 V - 150 - ns - 0.9 - µC 100 125 D G S Source to Drain Diode Voltage (Note 2) Reverse Recovery Time VSD trr Reverse Recovery Charge QRR TC = 25oC, ISD = -1.0A, VGS = 0V, (Figure 12) TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs TJ = 150oC, ISD = -4.0A, dISD/dt = 100A/µs NOTES: 2. Pulse test: pulse width ≤ 80µs, duty cycle ≤ 2%. 3. Repetitive rating: pulse width limited by maximum junction temperature. 4. VDD = 25V, starting TJ = 25oC, L = 555mH, RG = 25Ω, Peak IAS= 1.0A (Figures 14, 15). Typical Performance Curves Unless Otherwise Specified -1.0 1.0 ID, DRAIN CURRENT (A) POWER DISSIPATION MULTIPLIER 1.2 0.8 0.6 0.4 0.2 0 25 125 50 75 100 TA , AMBIENT TEMPERATURE (oC) -0.2 25 75 50 FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs AMBIENT TEMPERATURE 10µs 100µs 1ms 10ms OPERATION IN THIS AREA IS LIMITED BY rDS(ON) 100ms TC = 25oC TJ = MAX RATED SINGLE PULSE DC IDS, DRAIN TO SOURCE CURRENT (A) -5 1 10 100 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 3. FORWARD BIAS SAFE OPERATING AREA 4-47 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VGS = -7V VGS = -10V -4 VGS = -6V -3 -2 VGS = -5V -1 VGS = -4V 0 1 150 TA, AMBIENT TEMPERATURE (oC) 10 IDS, DRAIN TO SOURCE CURRENT (A) -0.4 150 FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT TEMPERATURE 0.01 -0.6 0 0 0.1 -0.8 0 -10 -20 -30 -40 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 4. OUTPUT CHARACTERISTICS -50 IRFD9120 Typical Performance Curves Unless Otherwise Specified (Continued) VGS = -7V VGS = -8V -4 VGS = -9V VGS = -10V -3 VGS = -6V PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. -2 VGS = -5V -1 VGS = -4V 0 0 -4 -2 -3 -1 VDS, DRAIN TO SOURCE VOLTAGE (V) -5 IDS(ON), DRAIN TO SOURCE CURRENT (A) IDS, DRAIN TO SOURCE CURRENT (A) -5 TJ = -55oC PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. VDS ≥ I D(ON) x rDS(ON) MAX. -4 TJ = 25oC -3 TJ = 125oC -2 -1 0 -5 -2 FIGURE 5. SATURATION CHARACTERISTICS -3 -4 -5 -6 VGS, GATE TO SOURCE VOLTAGE (V) -7 FIGURE 6. TRANSFER CHARACTERISTICS 1.6 NORMALIZED DRAIN TO SOURCE ON RESISTANCE rDS(ON), DRAIN TO SOURCE ON-STATE RESISTANCE (Ω) 2.2 1.2 0.8 VGS = -10V 0.4 VGS = -20V 0 0 -2 -4 -6 ID, DRAIN CURRENT (A) 1.8 1.4 1.0 0.6 0.2 -8 VGS = -10V, ID = -8A PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. -40 0 80 40 120 TJ , JUNCTION TEMPERATURE (oC) NOTE: Heating effect of 2µs pulse is minimal. FIGURE 7. DRAIN TO SOURCE ON RESISTANCE vs GATE VOLTAGE AND DRAIN CURRENT FIGURE 8. NORMALIZED DRAIN TO SOURCE ON RESISTANCE vs JUNCTION TEMPERATURE 500 VGS = 0V, f = 1MHz CISS = CGS + CGD CRSS = CGD COSS ≈ CDS + CGD PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 400 1.15 C, CAPACITANCE (pF) NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE 1.25 1.05 0.95 0.85 0.75 -40 0 40 80 120 TJ , JUNCTION TEMPERATURE (oC) FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE vs JUNCTION TEMPERATURE 4-48 CISS 300 200 COSS 100 CRSS 0 0 -10 -20 -30 -40 -50 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE IRFD9120 Typical Performance Curves Unless Otherwise Specified (Continued) 3 -100 ISD, SOURCE TO DRAIN CURRENT (A) gfs, TRANSCONDUCTANCE (S) PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. 2 TJ = -55oC TJ = 25oC 1 0 TJ = 125oC -2 -4 I D , DRAIN CURRENT (A) 0 PULSE DURATION = 80µs DUTY CYCLE = 0.5% MAX. -10 TJ = 150oC TJ = 25oC -1.0 -0.1 -0.4 -6 -0.8 -0.6 -1.0 -1.2 -1.4 -1.6 VSD, SOURCE TO DRAIN VOLTAGE (V) FIGURE 11. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 12. SOURCE TO DRAIN DIODE VOLTAGE VGS, GATE TO SOURCE VOLTAGE (V) 0 ID = -4A -5 -10 VDS = -80V VDS = -50V VDS = -20V -15 -20 0 4 8 12 16 20 Qg(TOT) , TOTAL GATE CHARGE (nC) FIGURE 13. GATE TO SOURCE VOLTAGE vs GATE CHARGE fd Test Circuits and Waveforms VDS tAV L VARY tP TO OBTAIN REQUIRED PEAK IAS 0 + RG 0V VGS DUT tP IAS VDD IAS VDS tP 0.01Ω FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT 4-49 VDD BVDSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS -1.8 IRFD9120 Test Circuits and Waveforms (Continued) tON tOFF td(OFF) td(ON) tf tr 0 RL - DUT VGS VDS VDD RG + 10% 10% VGS 0 90% 90% 10% 50% 50% PULSE WIDTH 90% FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS -VDS (ISOLATED SUPPLY) CURRENT REGULATOR 0 VDS DUT 12V BATTERY 0.2µF 50kΩ 0.3µF Qgs Qg(TOT) DUT G VGS Qgd D VDD 0 S IG(REF) IG CURRENT SAMPLING RESISTOR +VDS ID CURRENT SAMPLING RESISTOR FIGURE 18. GATE CHARGE TEST CIRCUIT 0 IG(REF) FIGURE 19. GATE CHARGE WAVEFORMS All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. 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