2SK4034 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅢ) 2SK4034 Switching Regulator, DC-DC Converter Applications Motor Drive Applications • Low drain-source ON-resistance: RDS (ON) = 4.2 mΩ(typ.) • High forward transfer admittance: |Yfs| = 110 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 60 V) • Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Drain-gate voltage (RGS = 20 kΩ) VDGR 60 V Gate-source voltage VGSS ±20 V (Note 1) ID 75 Pulse (t ≤ 1 ms) (Note 1) IDP 300 Drain power dissipation (Tc = 25°C) PD 125 W Single pulse avalanche energy (Note 2) EAS 322 mJ Avalanche current IAR 75 A Repetitive avalanche energy (Note 3) EAR 12.5 mJ Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C DC Drain current A Thermal Characteristics Characteristics Thermal resistance, channel to case Symbol Max Unit Rth (ch-c) 1.0 °C/W ⎯ JEDEC JEITA SC-97 TOSHIBA 2-9F1B Weight: 0.74 g (typ.) Note: Use the S1 pin to return the gate signal to source. Board traces should be designed so the main current flows to the S2 pin. Note 1: Ensure that the channel temperature does not exceed 150°C. 4 Note 2: VDD = 25 V, Tch = 25°C (initial), L = 78 μH, RG = 25 Ω, IAR = 75 A Note 3: Repetitive rating: pulse width limited by maximum channel temperature Note 4: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2 3 This transistor is an electrostatic-sensitive device. Handle with care. 1 2009-09-29 2SK4034 Electrical Characteristics (Note 5) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current IGSS VGS = ±16 V, VDS = 0 V ⎯ ⎯ ±10 μA Drain cut-off current IDSS VDS = 60 V, VGS = 0 V ⎯ ⎯ 100 μA V (BR) DSS ID = 10 mA, VGS = 0 V 60 ⎯ ⎯ V V (BR) DSX ID = 10 mA, VGS = -20 V 35 ⎯ ⎯ V VDS = 10 V, ID = 1 mA 1.5 ⎯ 2.5 V VGS = 10 V, ID = 38 A ⎯ 4.2 5.8 mΩ VGS = 4.5 V, ID = 38 A ⎯ 5.5 10 mΩ VDS = 10 V, ID = 38 A 55 110 ⎯ S ⎯ 12400 ⎯ ⎯ 410 ⎯ ⎯ 1100 ⎯ ⎯ 15 ⎯ ⎯ 35 ⎯ ⎯ 45 ⎯ ⎯ 250 ⎯ ⎯ 196 ⎯ ⎯ 148 ⎯ ⎯ 48 ⎯ Gate threshold voltage Vth Drain-source ON-resistance RDS (ON) Forward transfer admittance |Yfs| Input capacitance Ciss Reverse transfer capacitance Crss Output capacitance Coss Rise time VDS = 10 V, VGS = 0 V, f = 1 MHz tr ton Switching time Fall time tf Turn-off time Qg Gate-source charge Qgs Gate-drain (“miller”) charge Qgd 0V VOUT VDD ∼ − 30V toff Total gate charge (gate-source plus gate-drain) ID = 38 A 10 V 4.7 Ω Turn-on time VGS RL = 0.79Ω Drain-source breakdown voltage Duty ≤ 1%, tw = 10 μs VDD ≈ 48 V, VGS = 10 V, ID = 75 A pF ns nC Note 5: The S1 and S2 pins should be grounded together, except when measuring the switching time. Source-Drain Ratings and Characteristics (Note 6) (Ta = 25°C) Characteristics Symbol Test Condition Min Typ. Max Unit Continuous drain reverse current (Note 1, Note 6) IDR1 ⎯ ⎯ ⎯ 75 A Pulse drain reverse current (Note 1, Note 6) IDRP1 ⎯ ⎯ ⎯ 300 A Continuous drain reverse current (Note 1, Note 6) IDR2 ⎯ ⎯ ⎯ 1 A Pulse drain reverse current (Note 1, Note 6) IDRP2 ⎯ ⎯ ⎯ 4 A Forward voltage (diode) VDS2F IDR1 = 75 A, VGS = 0 V ⎯ ⎯ −1.5 V Reverse recovery time trr ⎯ 70 ⎯ ns Reverse recovery charge Qrr IDR = 75 A, VGS = 0 V, dIDR/dt = 50 A/μs ⎯ 77 ⎯ nC Note 6: IDR1, IDRP1: Current flowing between the drain and S2 pins. Ensure that the S1 pin is left open. IDR2, IDRP2: Current flowing between the drain and S1 pins. Ensure that the S2 pin is left open. The S1 and S2 pins should be grounded together, unless otherwise noted. Marking Part No. (or abbreviation code) K4034 Lot No. Note 7 Note 7: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 2 2009-09-29 2SK4034 ID – VDS 100 10 4.5 6 5 4.75 4.25 (A) 4 60 ID 80 3.75 40 3.5 20 10 5 4.75 Common source Tc=25℃ Pulse test 4.5 8 Drain Current ID (A) 8 Drain Current ID – VDS 200 Common source Tc=25℃ Pulse test VGS = 3.25 V 160 6 4.25 120 4 80 3.75 40 3.5 VGS = 3.25 V 0 0 0.2 0.4 0.6 0.8 Drain-source voltage VDS 0 1 0 (V) 1 2 ID – VGS (V) (V) Common source Tc=25℃ Pulse test 0.8 120 VDS (A) 5 VDS – VGS Drain-source voltage ID Drain Current VDS 1 Common source VDS=10V Pulse test 80 Ta =−55°C 40 100 25 0 0 2 4 8 6 Gate-source voltage VGS 0.6 0.4 ID = 75 A 0.2 0 10 38 19 0 (V) 4 8 1000 Drain-source ON-resistance RDS (ON) (mΩ) 100 Ta = −55°C 100 25 1 1 10 Drain current 100 ID 16 VGS 20 (V) RDS (ON) – ID 100 Common source VDS=10V Pulse test 10 12 Gate-source voltage ⎪Yfs⎪ – ID ⎪Yfs⎪ (S) 4 Drain-source voltage 160 Forward transfer admittance 3 10 4.5 VGS = 10 V 1 1 1000 (A) Common source Tc=25℃ Pulse test 10 Drain current 3 100 ID 1000 (A) 2009-09-29 2SK4034 IDR – VDS RDS (ON) – Tc (A) ID = 75 A 8 19 VGS = 4.5 V ID = 19,38,75A 4 0 −80 VGS = 10 V −40 0 40 Case temperature 80 Tc 120 10 5 3 10 1 VGS = 0,−1 V 1 0 160 −0.4 (°C) −0.8 Drain-source voltage Capacitance – VDS Vth (V) Gate threshold voltage Capacitance C (pF) 10000 Coss 1000 Common source VGS = 0 V f = 1 MHz Ta = 25°C Crss 10 3 2 1 VDS Common source VDS=10V ID=1mA Pulse test −80 100 (V) −40 0 40 80 Case temperature PD − Tc TC (V) 50 VDS (°C) Pulse test VDS Drain-source voltage 90 60 30 80 Case temperature 160 Common source ID=75A Tc=25℃ 40 120 40 120 Dynamic input/output characteristics 150 PD (W) (V) 4 0 1 Drain-source voltage Drain power dissipation VDS −2 5 Ciss 0 0 −1.6 Vth – Tc 100000 100 0.1 −1.2 120 Tc (°C) 12 VDs = 48 V 20 8 VGS 4 10 100 200 Total gate charge 4 16 12 24 30 0 0 160 20 (V) 2 100 VGS 6 IDR 38 Common source Tc=25℃ Pulse test 300 Qg 400 Gate-source voltage 10 1000 Common source Tc=25℃ Pulse test Drain reverse current Drain−source ON-resistance RDS (ON) (mΩ) 12 0 500 (nC) 2009-09-29 2SK4034 rth − tw Normalized transient thermal impedance rth (t)/Rth (ch-c) 10 1 Duty = 0.5 0.2 0.1 0.1 PDM Single Pulse 0.05 t 0.02 T 0.01 Duty = t/T Rth (ch-c) = 1.0°C/W 0.01 10 μ 100 μ 1m 10 m Pulse width 100 m tw 1 (S) Safe operating area EAS – Tch ID (A) Drain current 100 μs * ID max (pulsed) * I max (continuous) 100 D 1 ms * Avalanche energy 500 400 EAS (mJ) 1000 300 30 10 5 DC operation Tc = 25°C 3 300 200 100 0 25 1 0.5 10 0.3 Curves must be derated linearly with increase in temperature. 1 Drain-source voltage 75 100 Channel temperature (initial) *: Single nonrepetitive pulse Tc = 25°C 0.1 0.1 50 125 Tch 150 (°C) VDSS max 10 100 15 V VDS (V) BVDSS IAR 0V VDS VDD Test circuit RG = 25 Ω VDD = 25 V, L = 78 μH 5 Wave form E Ε AS = ⎛ ⎞ 1 B VDSS ⎟ ⋅ L ⋅ I2 ⋅ ⎜ ⎜B ⎟ 2 − V VDSS DD ⎝ ⎠ 2009-09-29 2SK4034 RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission. • Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. 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